PT4953 -30V P- Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 63m Ω RDS(ON), [email protected], [email protected] = 90mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions REF. Millimeter Min. Max. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 4 G2 REF. Millimeter Min. Max. A B C D E 5.80 4.80 3.80 0° 0.40 6.20 5.00 4.00 8° 1.27 M H L J K 0.10 0.25 0.31 0.51 1.35 1.75 0.375 REF. 45° F 0.17 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 ID -5.3 IDM -20 Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) TA = 25oC o TA = 75 C PD TJ, Tstg RθJA Unit V A 2.5 W 1.2 o -55 to 150 o 62.5 Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. -1- C C/W PT4953 ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -3.6A 70 90 Drain-Source On-State Resistance RDS(on) VGS = -10V, ID = -4.5A 50 63 Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA 1.7 -3 V Zero Gate Voltage Drain Current 0 IDSS VDS = -24V, VGS = 0V -1 uA Gate Body Leakage IGSS VGS = ± 16V, VDS = 0V ± 100 nA gfs VDS = -10V, ID = -5.3A 10 VDS =-15V, ID = -5.3A 28 Forward Transconductance VGS = 0V, ID = -250uA -30 -1 V mΩ S Dynamic1) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = -10V 7 VDD = -15V,, RL = 15Ω ID = -1A, nC 3 VGEN = -10V RG = 6Ω VDS = -15V, VGS = 0V f = 1.0 MHz 9 15 ns 75 40 745 pF 440 120 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS VSD IS = -2.6A, VGS = 0V -2.6 A -1.3 V Pulse test: pulse width <= 300us, duty cycle<= 2% -2- PT4953 -3-