ETC PT4953

PT4953
-30V P- Channel Enhancement-Mode MOSFET
VDS= -30V
RDS(ON), [email protected], [email protected] = 63m Ω
RDS(ON), [email protected], [email protected] = 90mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM
Package Dimensions
REF.
Millimeter
Min.
Max.
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1
S2
4
G2
REF.
Millimeter
Min.
Max.
A
B
C
D
E
5.80
4.80
3.80
0°
0.40
6.20
5.00
4.00
8°
1.27
M
H
L
J
K
0.10
0.25
0.31
0.51
1.35
1.75
0.375 REF.
45°
F
0.17
0.25
G
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
± 20
ID
-5.3
IDM
-20
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
TA = 25oC
o
TA = 75 C
PD
TJ, Tstg
RθJA
Unit
V
A
2.5
W
1.2
o
-55 to 150
o
62.5
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
-1-
C
C/W
PT4953
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
Drain-Source On-State Resistance
RDS(on) VGS = -4.5V, ID = -3.6A
70
90
Drain-Source On-State Resistance
RDS(on) VGS = -10V, ID = -4.5A
50
63
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
1.7
-3
V
Zero Gate Voltage Drain Current 0
IDSS
VDS = -24V, VGS = 0V
-1
uA
Gate Body Leakage
IGSS
VGS = ± 16V, VDS = 0V
± 100
nA
gfs
VDS = -10V, ID = -5.3A
10
VDS =-15V, ID = -5.3A
28
Forward Transconductance
VGS = 0V, ID = -250uA
-30
-1
V
mΩ
S
Dynamic1)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = -10V
7
VDD = -15V,, RL = 15Ω
ID = -1A,
nC
3
VGEN = -10V
RG = 6Ω
VDS = -15V, VGS = 0V
f = 1.0 MHz
9
15
ns
75
40
745
pF
440
120
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
IS
VSD
IS = -2.6A, VGS = 0V
-2.6
A
-1.3
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
-2-
PT4953
-3-