TSC TSM9926DCX6

TSM9926D
20V Dual N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate 1
2. Drain
3. Gate 2
4. Source 2
5. Drain
6. Source 1
VDS = 20V
RDS (on), Vgs @ 4.5V, Ids @ 6A =30mΩ
RDS (on), Vgs @ 2.5V, Ids @ 5.2A =40mΩ
Features
Block Diagram
—
Advanced trench process technology
—
High density cell design for ultra low on-resistance
—
Excellent thermal and electrical capabilities
—
Surface mount
—
Fast switching
Ordering Information
Part No.
Packing
Package
TSM9926DCX6
Tape & Reel
SOT-26
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
IDM
30
A
1.25
W
2
W
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
o
Maximum Power Dissipation
Ta = 25 C
Ta = 25 oC (Peak)
Operating Junction Temperature
PD
+150
o
C
TJ, TSTG
- 55 to +150
o
C
Symbol
Limit
Rθja
100
TJ
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
TSM9926D
1-3
2003/12 rev. B
Unit
o
C/W
Electrical Characteristics (per channel)
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
VGS = 4.5V, ID = 6A
RDS(ON)
--
21
30
Static
Drain-Source Breakdown Voltage
Drain-Source On-State
Resistance
Drain-Source On-State
mΩ
VGS = 2.5V, ID = 5.2A
RDS(ON)
--
30
40
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.6
--
--
V
Zero Gate Voltage Drain Current
VDS = 20V, VGS = 0V
IDSS
--
--
1.0
uA
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
± 100
nA
Forward Transconductance
VDS = 10V, ID = 6A
gfs
7
13
--
S
Qg
--
7.1
--
Qgs
--
1.96
--
Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V, ID = 6A,
VGS = 4.5V
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
Qgd
--
2.94
--
td(on)
--
4.9
--
tr
--
2.6
--
td(off)
--
15.7
--
tf
--
14
--
Ciss
--
620
--
Coss
--
124
--
Crss
--
95
--
IS
--
--
1.7
A
VSD
--
--
1.2
V
nS
pF
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS = 1.7A, VGS = 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM9926D
2-3
2003/12 rev. B
SOT-26 Mechanical Drawing
DIM
A
B
C
D
E
F
H
L
TSM9926D
3-3
SOT-26 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.70
3.00
0.106
0.118
0.25
0.50
0.010
0.020
1.90(typ)
0.075(typ)
0.95(typ)
0.037(typ)
1.50
1.70
0.059
0.067
1.05
1.35
0.041
0.053
2.60
3.00
0.102
0.118
0.60(typ)
0.024(typ)
2003/12 rev. B