HTSEMI AO3407

AO3407
30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m Ω
RDS(ON), [email protected], [email protected] < 87m Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
G
A
B
C
D
E
Millimeter
Min.
Max.
2.70
3.10
2.65
2.95
1.50
1.70
0.35
0.50
0
0.10
F
0.45
REF.
S
REF.
0.55
Millimeter
G
H
K
J
L
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
M
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
± 20
ID
5.3
IDM
-20
Parameter
Continuous Drain Current
Pulsed Drain Current
o
TA = 25 C
Maximum Power Dissipation
o
TA = 75 C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
Unit
V
A
1.4
W
1
o
-55 to 150
125
o
C
C/W
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
AO3407
30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250uA
-30
V
Drain-Source On-State Resistance
RDS(on)
VGS = -10V, ID = -4.1A
48.0
64.5
Drain-Source On-State Resistance
RDS(on)
VGS = -4.5V, ID = -3A
64.0
87.0
VGS(th)
VDS =VGS, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage
mΩ
Drain-Source On-State Resistance
Gate Threshold Voltage
Forward Transconductance
-3.0
V
VDS = -24V, VGS = 0V
-1
uA
IGSS
VGS = ± 20V, VDS = 0V
± 100
nA
gfs
VDS = -5V, ID = - 4 A
-1.0
-1
5.5
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -15V , ID = -5.3A
VGS = -10V
9.35
nC
3.43
1.7
10.8
VDD = -15V, RL=15Ω
ID = -1 A, VGEN = -10 V
RG = 6Ω
VDS = -15 V, VGS = 0V
f = 1.0 MHz
2.33
ns
22.53
3.87
551.57
pF
90.96
60.79
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD
IS = 2.6 A, VGS = 0V
-2.6
A
-1.3
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
２　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
AO3407
30V P-Channel Enhancement Mode MOSFET
３　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５