Gem micro GS4953S semiconductor Inc. Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) PRODUCT SUMMARY VDSS ID -30V -5.3A RDS(on) (m-ohm) Max 70 @ VGS = -10V, ID=-5.3A 100 @ VGS = -4.5V,ID=-3.9A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Surface mount Package · Ordering information：GS4953S（Lead（Pb）-free） GS4953S-G（Lead（Pb）-free and halogen-free） Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V -5.3 A -20 A 2.5 W -55 to +150 °C 62.5 °C/W ID IDM PD Tj, Tstg RqJA Drain Current (Continuous) Drain Current (Pulsed) a o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) a: Repetitive Rating: Pulse width limited by the maximum junction temperature. b: 1-in2 2oz Cu PCB board DS-GS4953S-REV00-KH10 Page 1 of 2 b Gem micro semiconductor Inc. GS4953S Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit · Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA VDS=VGS, ID=-250uA -1 -1.4 -3 V VGS=-10V, ID=-5.3A - - 70 VGS=-4.5V, ID=-3.9A - - 100 VDS=-10V, ID=-5.3A - 10 - · On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance mW S · Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHz - - - - - - - - - - PF · Switching Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - - td(on) Turn-on Delay Time - - tr Turn-on Rise Time VDD=-15V, RL=5W, ID=-3A, - - td(off) Turn-off Delay Time VGEN=-10V, RG=6W - - - - tf · VDS=-15V, ID=-3.6A, VGS=-10V Turn-off Fall Time nC nS Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1.9A Note: Pulse Test: Pulse Width £300us, Duty Cycle£2% DS-GS4953S-REV00-KH10 Page 2 of 2 - - -1.3 V