PANASONIC PNZ147

Phototransistors
PNZ147 (PN147)
Silicon planar type
Unit: mm
For optical control systems
Type number : cathode mark (Green)
■ Features
10.0 min.
0.5±0.1
• High sensitivity
• Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
• Fast response: tr , tf = 3 µs (typ.)
• Small size designed for easier mounting to printed circuit board
(φ1.8)
1.05±0.1
Rating
Unit
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-collector voltage (Base open)
VECO
5
V
Collector current
IC
20
mA
Collector power dissipation
PC
50
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
R0.9
0.4±0.1
(0.7)
(1.8)
2.2±0.15
2.8±0.2
2.8±0.2
(1.8)
(0.15)
(0.7)
45
°
2
0.85±0.15
Symbol
3.2±0.3
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
10.0 min.
3.2±0.3
1: Collector
2: Emitter
LTTLW102-001 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Photocurrent
Symbol
*1
*2
ICE(L)1
ICE(L)2
Conditions
Min
VCE = 10 V, L = 2 lx
Typ
Max
Unit
12
µA
VCE = 10 V, L = 500 lx
3.5
mA
3
ICEO
VCE = 10 V
0.01
Peak emission wavelength
λp
VCE = 10 V
800
nm
Half-power angle
θ
The angle from which photocurrent
becomes 50%
24
°
Rise time *3
tr
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
Fall time *3
tf
Dark current
Collector-emitter saturation voltage *1
VCE(sat)
ICE(L) = 1 mA, L = 1 000 lx
0.50
µA
3
10
µs
3
10
µs
0.2
0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2 856 K)
*2: Rank classification
Rank
Q
R
S
ICE(L) (µA)
3.0 to 11.0
7.0 to 24.0
>16.0
*3: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
50 Ω
Sig. out
RL
90%
10%
(Output pulse)
tr
tr: Rise time
tf: Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00017BED
1
PNZ147
PC  Ta
ICE(L)  VCE
20
50
ICE(L)  L
105
Ta = 25°C
T = 2 856 K
VCE = 10 V
Ta = 25°C
T = 2 856 K
16
40
30
20
L = 1 500 lx
12
1 000 lx
8
500 lx
4
10
Photocurrent ICE(L) (µA)
Photocurrent ICE(L) (mA)
Collector power dissipation PC (mW)
60
104
103
102
250 lx
100 lx
0
−20
0
20
40
60
80
0
100
0
4
8
16
20
10
24
1
ICEO  Ta
VCE = 10 V
103
Illuminance L (lx)
ICE(L)  Ta
102
102
10
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
1
12
Spectral sensitivity characteristics
100
VCE = 10 V
T = 2 856 K
VCE = 10 V
Ta = 25°C
10−2
10−3
10−4
−20
0
20
40
60
80
10
1
10−1
−40
100
Ambient temperature Ta (°C)
10°
20
80
120
30°
40°
50°
60°
70°
80°
RL = 1 kΩ
500 Ω
100 Ω
1
10−1
90°
10−2 −1
10
1
10
Photocurrent ICE(L) (mA)
2
SHE00017BED
40
20
0
200
400
600
800
1 000
Wavelength λ (nm)
VCC = 10 V
Ta = 25°C
10
60
tf  ICE(L)
102
Rise time tr , Fall time tf (µs)
40
Relative sensitivity ∆S (%)
60
40
tr  ICE(L)
20°
100
80
0
Ambient temperature Ta (°C)
Directivity characteristics
0°
Relative sensitivity ∆S (%)
Photocurrent ICE(L) (mA)
Dark current ICEO (µA)
80
10−1
102
1 200
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP