Transmissive Photosensors (Photo lnterrupters) CNA1302K (ON1004) Photo lnterrupter For contactless SW, object detection Unit: mm A Slit width (0.3) (1.5) ■ Overview CNA1302K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. A' 5.0 Symbol Rating VR 6 V emitting diode) Forward current IF 50 mA Power dissipation *1 PD 75 mW VCEO 35 V Emitter-collector voltage (Base open) VECO 6 V Collector current IC 20 mA Collector power dissipation *2 PC 75 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C 2.8 (1.0) 3.9 Not soldered 1.0 max. 2-0.5 *2.54 1: Anode 2: Cathode 3: Collector 4: Emitter 2 4 PISMR104-003 Package (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15 mm Unit Output (Photo Collector-emitter voltage transistor) (Base open) +0.1 φ1.5 -0 2-0.25 1 Reverse voltage (C0.5) Gate the rest 0.3 max. (C0.3) *3.8 ■ Absolute Maximum Ratings Ta = 25°C Parameter 4.2 Device center 5.2 • Ultraminiature: 4.2 mm × 5.0 mm (height: 5.2 mm) • Fast response: tr , tf = 35 µs (typ.) • Highly precise position detection: 0.15 mm • Gap width: 2.0 mm Temperature 1.5 2.4 4.0 min. ■ Features Input (Light SEC. A-A' 2.0 1.5 3 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Typ Max 1.2 1.4 V VR = 3 V 10 µA VCE = 20 V 100 nA 400 µA Forward voltage VF IF = 20 mA characteristics Reverse current IR Input Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current ICEO IC characteristics Collector-emitter saturation voltage VCE(sat) Min VCE = 5 V, IF = 5 mA 100 IF = 10 mA, IC = 40 µA 0.4 Unit V Rise time * tr VCC = 5 V, IC = 0.1 mA 35 µs Fall time * tf RL = 1 000 Ω 35 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50Ω RL 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00022BED 1 CNA1302K IF , I C T a IF V F 60 1.6 Ta = 25°C IF 50 IF = 50 mA 50 40 30 IC 20 10 40 30 20 10 mA 1 mA 0.8 0.4 10 0 20 40 60 80 0 100 0 0.4 0.8 1.2 1.6 2.0 0 −40 2.4 0 40 80 Ambient temperature Ta (°C ) Forward voltage VF (V) Ambient temperature Ta (°C ) IC I F IC VCE ∆IC Ta 5 3 VCE = 5 V Ta = 25°C 120 Ta = 25°C VCE = 5 V IF = 5 mA Collector current IC (mA) 4 3 2 2 IF = 20 mA 1 15 mA 1 10 mA Relative collector current ∆IC (%) 0 −25 Collector current IC (mA) 1.2 Forward voltage VF (V) Forward current IF (mA) Forward current IF , collector current IC (mA) 60 VF T a 100 80 60 40 20 5 mA 2 mA 0 0 5 10 15 20 0 25 Forward current IF (mA) 0 1 2 0 −40 6 0 40 80 tr I C tf I C 103 VCC = 5 V Ta = 25°C VCC = 5 V Ta = 25°C 10 −1 10 −2 10 −3 102 Fall time tf (µs) 102 Rise time tr (µs) Collector-emitter cutoff current (Base open) ICEO (µA) 5 Ambient temperature Ta (°C ) 103 VCE = 20 V RL = 2 kΩ 1 kΩ 10 100 Ω 1 RL = 2 kΩ 1 kΩ 10 100 Ω 1 10 −4 10 −5 −40 0 40 80 Ambient temperature Ta (°C ) 2 4 Collector-emitter voltage VCE (V) ICEO Ta 1 3 10 −1 10 −2 10 −1 1 Collector current IC (mA) SHG00022BED 10 10 −1 10 −2 10 −1 1 Collector current IC (mA) 10 CNA1302K ∆IC d (1) ∆IC d (2) 100 VCE = 5 V Ta = 25°C IF = 5 mA Relative collector current ∆IC (%) Relative collector current ∆IC (%) 100 80 Criterion 0 d 60 40 20 0 0 1 2 3 Distance d (mm) 4 VCE = 5 V Ta = 25°C IF = 5 mA 80 Criterion 0 d 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) SHG00022BED 3 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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