Reflective Photosensors (Photo Reflectors) CNB2003 Reflective photosensor Unit: mm 3.4 1.8 3 Input (Light Symbol Rating VR 6 V IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 35 V Emitter-collector voltage (Base open) VECO 6 V IC 30 mA PC 75 mW Operating ambient temperature T opr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Collector power dissipation Temperature *2 0.7 max. 0.85 Unit Reverse voltage Collector current 4 0.5 1.5 emitting diode) Forward current Power dissipation *1 1.7 2 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Chip center 0.35 6.1±0.3 • Reflow-compatible reflective photosensor • Ultraminiature, thin type: 2.7 mm × 3.4 mm (height: 1.5 mm) 2.7 C0.5 ■ Features 0.7 max. 1 0.15 1.7 Non-contact point SW, object sensing 1: Anode 2: Cathode 3: Emitter 4: Collector PRSMW104-003 Package (Note) Tolerance unless otherwise specified is ±0.2 Color of rank Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max 1.2 Unit Forward voltage VF IF = 20 mA 1.4 V characteristics Reverse current IR VR = 3 V 10 µA VCE = 10 V 1.0 µA Input Output Collector-emitter cutoff current characteristics (Base open) Transfer ICEO IC VCC = 2 V, IF = 4 mA, RL = 100 Ω, d = 1 mm 15.00 mA ID VCC = 2 V, IF = 4 mA, RL = 100 Ω 5.0 µA Collector-emitter saturation voltage VCE(sat) IF = 4 mA, IC = 0.5 mA 1.2 Rise time *2 tr VCC = 2 V, IC = 10 mA 120 Fall time *2 tf RL = 100 Ω 115 Collector current *1 characteristics Dark current 0.52 V µs Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation *3: Rank classification 3. *1: Output current measurement *2: Switching time method measurement circuit Rank Q Glass plate tr: Rise time Evaporated Al tf: Fall time d = 1 mm Sig. in Glass plate Evaporated Al d = 1 mm IF RL IC VCC Publication date: April 2004 Sig. in 50 Ω IC (mA) Color Sig. out RL Sig. out VCC tr tf R S 0.52 to 1.94 1.45 to 5.40 4.00 to 15.00 Orange White Light blue 90% 10% SHG00057BED 1 CNB2003 IF V F IC 30 20 Collector current IC (mA) 40 60 40 20 10 1 10 −1 0 20 40 60 80 0 100 0.4 0.8 1.2 1.6 1 Forward voltage VF (V) VF Ta IC VCE 102 1.4 1.0 1 mA 0.8 0.6 ∆IC Ta IF = 10 mA Collector current IC (mA) 10 mA 10 4 mA 2 mA 1 1 mA 10 −1 0.4 VCC = 2 V IF = 4 mA RL = 100 Ω 140 120 100 80 60 40 20 0.2 0 40 10 −2 10 −1 80 Ambient temperature Ta (°C) 1 tr , tf IC Rise time tr , fall time tf (µs) 102 10 1 10 −1 40 80 Ambient temperature Ta (°C) 120 80 100 RL = 1 kΩ 103 500 Ω 100 Ω 102 10 40 ∆IC d 104 VCE = 10 V 0 0 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) ICEO Ta 103 0 −40 102 10 Relative collector current ∆IC (%) 0 −40 10 −2 −40 103 160 Ta = 25°C IF = 50 mA 1.2 102 10 Forward current IF (mA) Relative collector current ∆IC (%) 0 1.6 Collector-emitter cutoff current (Base open) ICEO (µA) 102 10 Ambient temperature Ta (°C) 2 VCC = 5 V Ta = 25°C RL = 100 Ω d = 1 mm Ta = 25°C IF 50 0 −25 Forward voltage VF (V) IC I F 103 80 Forward current IF (mA) Forward current IF , collector current IC (mA) IF , IC Ta 60 VCC = 2 V Ta = 25°C : tr : tf 1 10 −2 10 −1 1 Collector current IC (mA) SHG00057BED 10 VCC = 2 V IF = 4 mA 80 d 60 40 20 0 0 2 4 6 Distance d (mm) 8 10 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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