VISHAY S852

S852T/S852TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage
D Low current consumption
D 50 W input impedance at 945 MHz
D Low noise figure
D High power gain
1
1
13 652
13 581
94 9280
2
3
S852T Marking: 852
1 = Collector, 2 = Base, 3 = Emitter
2
13 570
3
S852TW Marking: W52
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 125 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
12
6
2
8
30
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Document Number 85052
Rev. 3, 20-Jan-99
Symbol
RthJA
Value
450
Unit
K/W
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S852T/S852TW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
VCE = 12 V, VBE = 0
VCB = 8 V, IE = 0
VEB = 1 V, IC = 0
IC = 1 mA, IB = 0
IC = 5 mA, IB = 0.5 mA
VCE = 3 V, IC = 1 mA
Symbol Min
ICES
ICBO
IEBO
V(BR)CEO
6
VCEsat
hFE
40
Typ
0.1
90
Max Unit
100 mA
100 nA
1
mA
V
0.4
V
150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
q
y
Collector-base capacitance
Noise figure
Power g
gain
Collector current for fT max
Real part of input
impedance
Test Conditions
VCE = 3 V, IC = 1 mA, f = 500 MHz
VCE = 2 V, IC = 1.5 mA, f = 500 MHz
VCB = 1 V, f = 1 MHz
ZS = ZSopt, f = 450 MHz, VCE = 2 V,
IC = 0.5 mA
ZS = ZSopt, f = 945 MHz, VCE = 3 V,
IC = 1 mA
ZS = ZSopt, f = 945 MHz, VCE = 2 V,
IC = 1.5 mA
VCE = 2 V, IC = 0.5 mA, f = 450MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
VCE = 2 V, f = 500 MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
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Symbol
fT
fT
Ccb
Fopt
Min
Typ Max Unit
4.7
GHz
5.2
GHz
0.25
pF
1.1
dB
Fopt
1.8
dB
Fopt
2
dB
Gpe @Fopt
Gpe @Fopt
Gpe @Fopt
IC
Re(h11e)
Re(h11e)
11.5
10.5
12
3
50
50
dB
dB
dB
mA
W
W
Document Number 85052
Rev. 3, 20-Jan-99
S852T/S852TW
Vishay Telefunken
Common Emitter S–Parameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified
S11
VCE/V
IC/mA
0.5
2
1.5
Document Number 85052
Rev. 3, 20-Jan-99
f/MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
LIN
MAG
9.976
0.969
0.955
0.939
0.920
0.901
0.881
0.861
0.838
0.818
0.793
0.772
0.746
0.972
0.898
0.858
0.811
0.762
0.710
0.662
0.617
0.576
0.540
0.502
0.470
0.439
S21
ANG
deg
–3.8
–7.9
–11.7
–15.5
–18.9
–22.4
–25.8
–28.9
–32.3
–35.4
–38.8
–41.5
–45.1
–7.5
–14.5
–21.0
–27.0
–32.2
–36.8
–40.3
–43.8
–46.9
–50.0
–52.4
–54.8
–57.6
LIN
MAG
1.71
1.71
1.70
1.68
1.64
1.62
1.58
1.56
1.53
1.50
1.49
1.46
1.44
4.84
4.69
4.49
4.27
4.01
3.77
3.55
3.33
3.15
2.98
2.82
2.69
2.56
S12
ANG
deg
174.9
168.9
163.3
157.7
151.9
147.2
142.2
137.6
133.1
129.4
125.1
121.3
117.2
170.9
161.7
153.1
145.1
137.8
131.3
125.3
120.0
115.1
110.7
106.5
102.8
99.0
LIN
MAG
0.015
0.029
0.044
0.058
0.070
0.082
0.093
0.104
0.114
0.121
0.130
0.138
0.148
0.016
0.031
0.045
0.057
0.067
0.077
0.085
0.093
0.099
0.106
0.113
0.118
0.123
S22
ANG
deg
86.8
83.4
80.0
76.8
73.6
71.5
69.0
66.7
65.0
63.5
61.8
60.4
58.6
84.8
79.8
75.1
71.5
68.3
65.9
63.6
62.1
61.2
60.3
59.5
59.3
58.7
LIN
MAG
0.998
0.993
0.984
0.974
0.959
0.948
0.935
0.922
0.909
0.898
0.884
0.873
0.859
0.990
0.972
0.944
0.913
0.880
0.849
0.820
0.796
0.775
0.756
0.740
0.724
0.710
ANG
deg
–2.3
–4.7
–6.7
–8.7
–10.6
–12.4
–13.9
–15.5
–17.2
–18.6
–19.7
–21.3
–22.6
–3.9
–7.4
–10.6
–13.1
–15.3
–16.8
–17.8
–18.7
–19.5
–20.3
–20.8
–21.4
–21.7
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S852T/S852TW
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
C cb – Collector Base Capacitance ( pF )
P tot – Total Power Dissipation ( mW )
50
40
30
20
10
0
0
25
50
75
100
125
150
Tamb – Ambient Temperature ( °C )
13619
f T – Transition Frequency ( MHz )
0.4
0.3
0.2
0.1
0
0
13622
1
2
3
4
5
VCB – Collector Base Voltage ( V )
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
Figure 1. Total Power Dissipation vs.
Ambient Temperature
7000
0.5
3V
f=500MHz
6000
2V
5000
4000
VCE=1V
3000
2000
1000
0
0
13620
1
2
3
4
5
IC – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
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Document Number 85052
Rev. 3, 20-Jan-99
S852T/S852TW
Vishay Telefunken
VCE = 2 V, IC = 1.5 mA , Z0 = 50 W
S12
S11
j
90°
120°
j0.5
1300MHz
900
j2
500
150°
j0.2
ÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁÁÁ
0
30°
j5
0.2
0.5
1
2
1
5
100
180°
0.04
0.08
0°
100
1300MHz
–j0.2
–j0.5
–j5
500
900
–150°
–30°
–j2
–120°
–j
13 562
–60°
–90°
13 563
Figure 4. Input reflection coefficient
Figure 6. Reverse transmission coefficient
S21
S22
j
90°
120°
60°
j0.5
150°
500
900
j2
30°
j0.2
1300MHz
100
180°
2
4
0°
0
j5
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁ
0.2
0.5
1
2
5
100
1
1300MHz
–j0.2
–150°
–j5
–30°
–j0.5
–120°
13 564
–90°
Figure 5. Forward transmission coefficient
Document Number 85052
Rev. 3, 20-Jan-99
–j2
–60°
13 565
–j
Figure 7. Output reflection coefficient
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S852T/S852TW
Vishay Telefunken
Dimensions of S852T in mm
95 11346
Dimensions of S852TW in mm
96 12236
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Document Number 85052
Rev. 3, 20-Jan-99
S852T/S852TW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85052
Rev. 3, 20-Jan-99
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