VBP104FAS, VBP104FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES VBP104FAS • • • • • Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 4.4 High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times VBP104FASR 21726-1 DESCRIPTION • • • • Angle of half sensitivity: ϕ = ± 65° Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in APPLICATIONS • High speed detector for infrared radiation VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. • Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT Ira (µA) ϕ (deg) λ0.5 (nm) VBP104FAS 35 ± 65 780 to 1050 VBP104FASR 35 ± 65 780 to 1050 PACKAGE FORM Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS VBP104FAS Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing VBP104FASR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 350 K/W Junction temperature Soldering temperature Acc. reflow sloder profile fig. 8 Thermal resistance junction/ambient Document Number: 81169 Rev. 1.1, 20-Apr-10 For technical questions, contact: [email protected] www.vishay.com 1 VBP104FAS, VBP104FASR Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF TYP. MAX. UNIT 1 1.3 IR = 100 µA, E = 0 V(BR) V VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 48 VR = 3 V, f = 1 MHz, E = 0 CD 17 40 pF Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV mV/K Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage mW/cm2, λ = 950 nm MIN. 60 V pF Temperature coefficient of Vo Ee = 1 TKVo - 2.6 Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 32 µA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 35 µA 25 Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 950 nm λ 0.5 780 to 1050 nm Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature www.vishay.com 2 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81169 Rev. 1.1, 20-Apr-10 VBP104FAS, VBP104FASR Silicon PIN Photodiode S(λ)φ, rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 2 Ee - Irradiance (mW/cm ) 94 8421 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 700 21743 Fig. 3 - Reverse Light Current vs. Irradiance 800 900 1000 λ - Wavelength (nm) 10° 20° 30° 1 mW/cm Srel - Relative Radiant Sensitivity λ = 950 nm 2 0.5 mW/cm2 10 1100 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 Ira - Reverse Light Current (µA) 0.9 0.0 600 10 1 1.0 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 Vishay Semiconductors 80° 1 0.1 1 10 100 VR - Reverse Voltage (V) 94 8422 0.6 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 94 8423 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 81169 Rev. 1.1, 20-Apr-10 For technical questions, contact: [email protected] www.vishay.com 3 VBP104FAS, VBP104FASR Silicon PIN Photodiode Vishay Semiconductors 0.1 - 0.1 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 (0.47 ref.) PACKAGE DIMENSIONS FOR VBP104FAS in millimeters Flat area 0.3 min. 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size 2.4 x 2.4 Cathode 0.8 ± 0.1 1.6 ± 0.1 3.9 ± 0.1 1.95 Anode 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN specifications Recommended solder pad 8.9 1.8 5.4 Drawing-No.: 6.541-5088.01-4 Issue: 1; 15.04.10 22107 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81169 Rev. 1.1, 20-Apr-10 VBP104FAS, VBP104FASR Silicon PIN Photodiode Vishay Semiconductors 0.1 min. (0.47 ref.) Flat area 0.3 min. 0.15 ± 0.02 1.2 ± 0.1 0.75 ± 0.05 PACKAGE DIMENSIONS FOR VBP104FASR in millimeters 4.4 ± 0.1 0.18 ± 0.2 2.2 Chip Size Cathode 0.8 ± 0.1 Anode 3.9 ± 0.1 1.6 ± 0.1 1.95 2.4 x 2.4 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN Recommended solder pad specifications 8.9 1.8 5.4 Drawing-No.: 6.541-5087.01-4 Issue: 1; 15.04.10 22106 Document Number: 81169 Rev. 1.1, 20-Apr-10 For technical questions, contact: [email protected] www.vishay.com 5 VBP104FAS, VBP104FASR Vishay Semiconductors Silicon PIN Photodiode TAPING DIMENSIONS FOR VBP104FAS in millimeters 21730 TAPING DIMENSIONS FOR VBP104FASR in millimeters 21731 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81169 Rev. 1.1, 20-Apr-10 VBP104FAS, VBP104FASR Silicon PIN Photodiode Vishay Semiconductors REEL DIMENSIONS FOR VBP104FAS AND VBP104FASR in millimeters 21732 SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C 200 FLOOR LIFE max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 50 19841 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Document Number: 81169 Rev. 1.1, 20-Apr-10 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1