VISHAY VBP104FASR

VBP104FAS, VBP104FASR
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
VBP104FAS
•
•
•
•
•
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
Radiant sensitive area (in mm2): 4.4
High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
VBP104FASR
21726-1
DESCRIPTION
•
•
•
•
Angle of half sensitivity: ϕ = ± 65°
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
and
in
APPLICATIONS
• High speed detector for infrared radiation
VBP104FAS and VBP104FASR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 4.4 mm2 sensitive area and
a daylight blocking filter matched with IR emitters operating
at wavelength 870 nm or 950 nm.
• Infrared
remote
control
and
free
air
data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
PRODUCT SUMMARY
COMPONENT
Ira (µA)
ϕ (deg)
λ0.5 (nm)
VBP104FAS
35
± 65
780 to 1050
VBP104FASR
35
± 65
780 to 1050
PACKAGE FORM
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
VBP104FAS
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Gullwing
VBP104FASR
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Reverse gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Tamb ≤ 25 °C
Power dissipation
SYMBOL
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
350
K/W
Junction temperature
Soldering temperature
Acc. reflow sloder profile fig. 8
Thermal resistance junction/ambient
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: [email protected]
www.vishay.com
1
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
TYP.
MAX.
UNIT
1
1.3
IR = 100 µA, E = 0
V(BR)
V
VR = 10 V, E = 0
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
48
VR = 3 V, f = 1 MHz, E = 0
CD
17
40
pF
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
mV/K
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
mW/cm2,
λ = 950 nm
MIN.
60
V
pF
Temperature coefficient of Vo
Ee = 1
TKVo
- 2.6
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
32
µA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
35
µA
25
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
950
nm
λ 0.5
780 to 1050
nm
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
100
ns
Range of spectral bandwidth
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
www.vishay.com
2
1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
For technical questions, contact: [email protected]
Document Number: 81169
Rev. 1.1, 20-Apr-10
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
S(λ)φ, rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
2
Ee - Irradiance (mW/cm )
94 8421
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
700
21743
Fig. 3 - Reverse Light Current vs. Irradiance
800
900
1000
λ - Wavelength (nm)
10°
20°
30°
1 mW/cm
Srel - Relative Radiant Sensitivity
λ = 950 nm
2
0.5 mW/cm2
10
1100
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
Ira - Reverse Light Current (µA)
0.9
0.0
600
10
1
1.0
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
Vishay Semiconductors
80°
1
0.1
1
10
100
VR - Reverse Voltage (V)
94 8422
0.6
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
94 8423
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: [email protected]
www.vishay.com
3
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
0.1 - 0.1
0.15 ± 0.02
1.2 ± 0.1
0.75 ± 0.05
(0.47 ref.)
PACKAGE DIMENSIONS FOR VBP104FAS in millimeters
Flat area 0.3 min.
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
2.4 x 2.4
Cathode
0.8 ± 0.1
1.6 ± 0.1
3.9 ± 0.1
1.95
Anode
1 ± 0.15
6.4 ± 0.3
technical drawings
according to DIN
specifications
Recommended solder pad
8.9
1.8
5.4
Drawing-No.: 6.541-5088.01-4
Issue: 1; 15.04.10
22107
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 81169
Rev. 1.1, 20-Apr-10
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
0.1 min.
(0.47 ref.)
Flat area 0.3 min.
0.15 ± 0.02
1.2 ± 0.1
0.75 ± 0.05
PACKAGE DIMENSIONS FOR VBP104FASR in millimeters
4.4 ± 0.1
0.18 ± 0.2
2.2
Chip Size
Cathode
0.8 ± 0.1
Anode
3.9 ± 0.1
1.6 ± 0.1
1.95
2.4 x 2.4
1 ± 0.15
6.4 ± 0.3
technical drawings
according to DIN
Recommended solder pad
specifications
8.9
1.8
5.4
Drawing-No.: 6.541-5087.01-4
Issue: 1; 15.04.10
22106
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: [email protected]
www.vishay.com
5
VBP104FAS, VBP104FASR
Vishay Semiconductors
Silicon PIN Photodiode
TAPING DIMENSIONS FOR VBP104FAS in millimeters
21730
TAPING DIMENSIONS FOR VBP104FASR in millimeters
21731
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 81169
Rev. 1.1, 20-Apr-10
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
REEL DIMENSIONS FOR VBP104FAS AND VBP104FASR in millimeters
21732
SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
200
FLOOR LIFE
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
50
19841
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
Document Number: 81169
Rev. 1.1, 20-Apr-10
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
For technical questions, contact: [email protected]
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1