TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 37° 16733 • Package matched with IR emitter series TSKS5400S DESCRIPTION • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC TEKT5400S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 950 nm IR emitters. APPLICATIONS with • Detector in electronic control and drive circuits PRODUCT SUMMARY Ica (mA) ϕ (deg) λ0.5 (nm) 4 ± 37 850 to 980 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 2000 pcs, 2000 pcs/bulk Side view lens COMPONENT TEKT5400S Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TEKT5400S Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 70 V Emitter collector voltage VECO 7 V mA Collector current Collector peak current Power dissipation IC 100 tp/T ≤ 0.5, tp ≤ 10 ms ICM 200 mA Tamb ≤ 40 °C PV 150 mW Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient UNIT Tj 100 °C Tamb - 40 to + 85 °C °C Tstg - 40 to + 100 t≤5s Tsd 260 °C J-STD-051, soldered on PCB RthJA 270 K/W Note Tamb = 25 °C, unless otherwise specified Document Number: 81569 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 431 TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PV - Power Dissipation (mW) 120 100 80 60 RthJA = 270 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21331 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, E = 0 ICEO 1 Collector emitter capacitance Collector dark current VCE = 5 V, f = 1 MHz, E = 0 CCEO 6 pF Collector ligth current Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 4 mA ± 37 deg 2 ϕ Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage 100 nA λp 920 nm λ0.5 850 to 980 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.3 V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz µs Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 10 V 102 101 1.8 1.4 1.2 1.0 0.8 0.6 10 20 94 8249 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 432 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 94 8239 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81569 Rev. 1.5, 08-Sep-08 TEKT5400S Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 12 ton/toff - Turn-on/Turn-off Time (µs) TEKT5400S 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.01 0.1 Ee - Irradiance 16707 (mW/cm 2) E e =1mW/cm 2 0.5 mW/cm 2 1 0.2 mW/cm 2 0.1 mW/cm 2 1 10 4 12 8 16 IC - Collector Current (mA) Fig. 7 - Turn-on/Turn-off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 700 800 900 1100 1000 λ - Wavelength (nm) Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 20 10° 20° 30° I e rel - Relative Radiant Intensity CCEO - Collector Ermitter Capacitance (pF) 0 94 8270 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage f = 1 MHz 16 12 8 4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0.1 94 8247 toff 2 100 V CE - Collector Ermitter Voltage (V) 16718 ton 4 0 S ( λ) rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 10 0.1 0.1 6 94 8253 Fig. 4 - Collector Light Current vs. Irradiance λ = 950 nm 8 10 1 VCE = 5 V RL = 100 Ω λ = 950 nm 10 ϕ - Angular Displacement Ica - Collector Light Current (mA) 10 1 10 100 VCE - Collector Ermitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number: 81569 Rev. 1.5, 08-Sep-08 0.6 0.4 0.2 0 16732 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 433 TEKT5400S Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PACKAGE DIMENSIONS in millimeters 16706 www.vishay.com 434 For technical questions, contact: [email protected] Document Number: 81569 Rev. 1.5, 08-Sep-08 TEKT5400S Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors TAPE AND AMMOPACK STANDARDS Dimensions in millimeters Labeling: barcode-label see 5.6.4 16716 Document Number: 81569 Rev. 1.5, 08-Sep-08 Measure limit over 20 index-holes: ± 1 For technical questions, contact: [email protected] www.vishay.com 435 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1