TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Package matched with IR emitter series VSLB3940, TSUS4300, and TSAL4400 DESCRIPTION • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TEFD4300 is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed photo detector for data transmission • Optical switches • Counters and sorters • Interrupters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) 17 ± 20 350 to 1120 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TEFD4300 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TEFD4300 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.1, 29-Nov-11 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t ≤ 3 s, 2 mm from case Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Document Number: 83471 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEFD4300 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro 0.15 VR = 0 V, f = 1 MHz, E = 0 CD 3.3 Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. TYP. MAX. UNIT 1 V 60 V 3 nA pF VR = 5 V, f = 1 MHz, E = 0 CD 1.2 pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm VOC 350 mV Temperature coefficient of VO Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K mW/cm2, λ = 950 nm Short circuit current Ee = 1 Ik 15 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira Reverse light current 9 17 27 μA Angle of half sensitivity ϕ ± 20 deg Wavelength of peak sensitivity λp 950 nm λ0.1 Range of spectral bandwidth 350 1120 nm Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10-7 Ira, rel - Relative Reverse Light Current Ir0 - Reverse Dark Current (A) 10-6 VR = 10 V -8 10 10-9 10-10 -11 10 10-12 0 20 40 60 80 Fig. 1 - Reverse Dark Current vs. Ambient Temperature VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Tamb - Ambient Temperature (°C) Rev. 1.1, 29-Nov-11 1.4 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 83471 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEFD4300 www.vishay.com Vishay Semiconductors 1.0 tp = 100 μs, VR = 5 V, λ = 950 nm 0.9 Srel - Relative Sensitivity Ira - Reverse Light Current (μA) 100 10 1 0.1 1 10 100 1000 0.6 0.5 0.4 0.3 0.2 0 - 90 10 000 - 60 - 30 0 30 60 90 Ee - Irradiance (μW/cm2) ϕ - Angular Displacement (°) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Radiant Intensity vs. Angular Displacement 3.5 10-6 Ir0 - Reverse Dark Current (A) f = 1 MHz, E = 0 3.0 Cp - Capacitance (pF) 0.7 0.1 0.01 2.5 2.0 1.5 1.0 0.5 0 0.01 S(λ)rel - Relative Spectral Sensitivity 0.8 0.1 1 10 100 100 °C 10-7 75 °C 10-8 50 °C 10-9 25 °C 10-10 0 °C 10-11 10-12 0 5 10 15 20 VR - Reverse Voltage (V) VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Fig. 7 - Dark Current vs. Reverse Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 500 600 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.1, 29-Nov-11 Document Number: 83471 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEFD4300 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.2 ± 0.1 C 3.9 ± 0.15 A Ø 3 ± 0.1 AREA NOT PLANE 6.1 ± 0.3 30.6 ± 0.5 < 0.6 (2.5) 3.5 ± 0.1 4.5 ± 0.3 SENSITIVE AREA 2.54 nom. Drawing-No.: 6.544-5411.01-4 Issue: 1; 25.05.11 1.5 ± 0.25 + 0.15 0.6 ± 0.15 0.4 - 0.05 technical drawings according to DIN specifications 22618 Rev. 1.1, 29-Nov-11 Document Number: 83471 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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