SavantIC Semiconductor Product Specification MJE340 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 3 V 0.5 A 20 W IC Collector current PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT /W SavantIC Semiconductor Product Specification MJE340 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100µA;IC=0 3 V VCE(sat) Collector-emitter saturation voltage IC=100mA ;IB=10mA 1.0 V VBE(sat) Base-emitter saturation voltage IC=100mA ;IB=10mA 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 100 µA IEBO Emitter cut-off current VEB=3V; IC=0 100 µA hFE DC current gain IC=50mA ; VCE=10V 2 MIN 30 TYP. MAX 240 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJE340