FFB5551 FFB5551 E2 Dual-Chip NPN General Purpose Amplifier B2 • This device is deisgned for general purpose high voltage amplifiers. • E1 is Pin 1. C1 C2 B1 E1 SC70-6 Mark: .P1 Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 160 VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 200 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous Units V * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V V(BR)CBO Collector-Base BreakdownVoltage IC = 100µA, IE = 0 180 V 6.0 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICBO Collector Cut-off Current VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C 50 50 nA µA V IEBO Emitter Cut-off Current VEB = 4.0V, IC = 0 50 nA On Characteristics * hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.20 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.0 V 300 MHz 6.0 pF VCE = 5.0V, IC = 1.0mA VCE = 5.0V, IC = 10mA VCE = 5.0V, IC = 50mA 80 80 30 250 Small Signal Characteristics fT Current gain Bandwidth Product VCE = 10V, IC = 10mA f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 100 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 200 1.6 Units mW mW/°C RθJA Thermal Resistance, Junction to Ambient 625 °C/W ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FFB5551 Thermal Characteristics TA=25°C unless otherwise noted FFB5551 Typical Characteristics 0 VCE(SAT)[V], SATURATION VOLTAGE Ta=125 C hFE, DC CURRENT GAIN 100 0 Ta=25 C 0 Ta=-40 C 10 1 0.1 1E-4 1E-3 0.01 0.1 IC=10IB 0 10 Ta=25 C 1 0 Ta=125 C 0 Ta=-40 C 0.1 1 1E-3 0.01 IC[A], COLLECTOR CURRENT Figure 2. Collector-Emitter Saturation Voltage 10 0.50 0 Ta=25 C 0 Ta=-40 C VCE=5V 0.45 IC=10IB IC[A], COLLECTOR CURRENT VBE(SAT)[V], SATURATION VOLTAGE 0.1 IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain 1 Ta=25 C 0 0 Ta=25 C 0 Ta=125 C 0 Ta=25 C 0.40 0.35 0.30 0.25 0.20 0 Ta=25 C 0.15 0 Ta=125 C 0.10 0 Ta=-40 C 0.05 0.1 1E-3 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage ©2003 Fairchild Semiconductor Corporation 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE[V], BASE-EMITTER VOLTAGE Figure 4. Base-Emitter On Voltage Rev. A, June 2003 FFB5551 Package Dimensions SC70-6 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2