PN930 PN930 NPN General Purpose Amplifier • This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 50mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage IC Collector Current TJ, TSTG Operating and Storage Junction Temperature Range 5.0 V 100 mA - 55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO Test Condition Min. Max. Units IC = 10mA, IB = 0 45 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10nA, IC = 0 5.0 ICEO Collector Cutoff Current VCE = 5.0V V 2.0 nA ICBO Collector Cutoff Current VCB = 45V, IE = 0 10 nA ICES Collector Cutoff Current VCB = 45V, IE = 0 VCB = 45V, IE = 0, TA = 170°C 10 10 nA µA IEBO Emitter Cutoff Current VEB = 5.0V, IC = 0 10 nA On Characteristics DC Current Gain hFE VCE = 5.0V, IC = 10µA VCE = 5.0V, IC = 10µA, TA = -55°C VCE = 5.0V, IC = 500µA VCE = 5.0V, IC = 10mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA Small Signal Characteristics Output Capacitance Cob 10 20 150 600 0.6 VCB = 5.0V, f = 1.0MHz hfe Small Signal Current Gain IC = 500µA, VCE = 5.0V, f = 20MHz IC = 1.0mA, VCE = 5.0V, f = 1.0KHz 1.5 150 hib Input Impedance IC = 1.0mA, VCE = 5.0V, f = 1.0KHz 25 hrb Voltage Feedback Ratio hob Output Admittance NF Noise Figure VCE = 5.0V, IC = 10µA RG = 10KΩ, BW = 15.7KHz 300 1.0 V 1.0 V 8.0 pF 600 32 Ω 600 x10-6 1.0 µmho 3.0 dB * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 Symbol PD Total Device Dissipation Derate above 25°C Parameter Max. 625 5.0 Units mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN930 Thermal Characteristics TA=25°C unless otherwise noted PN930 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1