FMBS5401 FMBS5401 PNP General Purpose Amplifier NC C1 • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. E B C pin #1 C SuperSOTTM-6 single Mark: .4S1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value -150 Units V VCBO VEBO Collector-Base Voltage -160 V Emitter-Base Voltage -5.0 IC Collector Current V -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -150 V BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -160 V -5.0 BVEBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 ICBO Collector Cutoff Current VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C -50 -50 nA µA V IEBO Emitter Cutoff Current VEB= -3.0V, IC=0 -50 nA On Characteristics * hFE DC Current Gain IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V 50 60 50 240 VCE (sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -0.2 -0.5 V V VBE (sat) Base-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -1.0 -1.0 V V 300 MHz Small Signal Characterics fT Current Gain Bandwidth Product IC = -10mA, VCE = -10V, f = 100MHz 100 Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz 6.0 pF NF Noise Figure IC = -250µA, VCE = -5.0V, RS = 1.0KΩ f = 10Hz to 15.7KHz 8.0 dB * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A, Octorber 2004 Symbol PD Parameter Total Device Dissipation * Max. 700 Units mW RθJA Thermal Resistance, Junction to Ambient, total 180 °C/W * Device mounted on a 1 in 2 pad of 2 oz coppe ©2004 Fairchild Semiconductor Corporation Rev. A, Octorber 2004 FMBS5401 Thermal Characteristics Ta=25°C unless otherwise noted FMBS5401 Typical Characteristics hFE - TYPICAL PULSED CURRENT GAIN VCE = 5V VCESAT - COLLECTOR-EMITTER VOLTAGE (V) 0.4 200 β β = 10 0.3 150 o 125 C o 25 C 0.2 100 o 25 C o β 50 o - 40 C 0 1E-4 125 C 0.1 1E-3 0.01 0.1 1 IC - COLLECTOR CURRENT (A) o - 40 C 0.0 0.1 10 100 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 VBESAT - BASE-EMITTER VOLTAGE (V) 1.0 VBC(ON) - BASE-EMITTER ON VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current o - 40 C 0.8 o - 40 C 0.8 o 25 C 0.6 o 25 C 0.6 o 125 C β 0.4 1 10 β o 125 C 0.4 β = 10 0.2 0.1 100 VCE = 5V 0.2 0.1 IC - COLLECTOR CURRENT (mA) 10 1 0.1 Figure 5. Collector-Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation 150 BV CER - BREAKDOWN VOLTAGE (V) V CB = 10 0V 50 75 100 125 T A - AM BIENT TE MPE RATURE (°C) 10 100 Figure 4. Base-Emitter On Voltage vs Collector Current 100 25 1 IC - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Current I CBO - COLLECTOR CURRENT (nA) 1 IC - COLLECTOR CURRENT (mA) 220 210 200 190 180 170 0.1 1 10 100 1000 RESISTANCE (kΩ ) Ω Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Rev. A, Octorber 2004 FMBS5401 Typical Characteristics (Continued) 80 CAPACITANCE (pF) f = 1.0 MHz 60 40 C eb 20 C cb 0 0.1 1 10 100 V R - REVERSE BIAS VOLTAGE(V) Figure 7. Input and Output Capacitance vs Reverse Voltage ©2004 Fairchild Semiconductor Corporation Rev. A, Octorber 2004 FMBS5401 Package Dimensions SuperSOTTM-6 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13