NZT560/NZT560A NZT560/NZT560A NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter NZT560/NZT560A 60 VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current TJ, TSTG Operating and Storage Junction Temperature Range - Continuous Units V 3 A - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Conditions Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 60 V BVCBO Collector-Base Breakdown Voltage IC = 100µA 80 V V BVEBO Emitter-Base Breakdown Voltage IE = 100µA 5 ICBO Collector Cutoff Current VCB = 30V VCB = 30V, TA = 100°C 100 10 nA µA IEBO Emitter Cutoff Current VEB = 4V 100 nA V On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V NZT560 NZT560A IC = 1A, VCE = 2V IC = 3A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 70 100 250 80 25 300 550 300 450 400 NZT560 NZT560A mV mV mV 1.25 V 1 V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 30 75 pF MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 Symbol Parameter PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient ©2003 Fairchild Semiconductor Corporation Max. NZT560 NZT560A Units 1 W 125 °C/W Rev. C3, January 2003 NZT560/NZT560A Thermal Characteristics TA=25°C unless otherwise noted NZT560/NZT560A β = 10 β = 10 1.4 β = 10 β = 10 1.2 1 - 40 °C 0.8 0.6 25 °C 0.4 125 °C 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBEON- BASE-EMITTER ON VOLTAGE (V) β = 10 VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) Typical Characteristics 1.4 Vce = 2.0V 1.2 1 - 40 °C 0.8 0.6 0.4 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 450 0.8 β = 10 β = 10 400 β = 10 350 β = 10 0.6 125°C 25°C 0.4 - 40°C 0.2 10 Figure 2. Base-Emitter On Voltag vs Collector Current CAPACITANCE (pf) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 125 °C 0.2 0.0001 Figure 1. Base-Emitter Saturation Voltage vs Collector Current f = 1.0 MHz C ibo 300 250 200 150 100 C obo 50 0 0.001 0.01 0.1 1 (mA) I C- COLLECTOR CURRENT (mA) 10 Figure 3. Collector-Emitter Saturation Voltage vs Collector Current 700 0 0.1 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Figure 4. Input/Output Capacitance vs Reverse Bias Voltage Vce = 2.0V 600 h HFE FE - CURRENT GAIN β = 10 25 °C 125°C 500 400 25°C 300 - 40°C 200 100 0 0 0.5 1 1.5 2 2.5 3 I C - COLLECTOR CURRENT (mA) 3.5 Figure 5. Current Gain vs Collector Current ©2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 NZT560/NZT560A Package Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I1