FREESCALE MHVIC2114R2

Freescale Semiconductor
Technical Data
Document Number: MHVIC2114R2
Rev. 4, 8/2006
Replaced by MHVIC2114NR2. There are no form, fit or function changes with this part
replacement. N suffix indicates RoHS compliant part.
MHVIC2114R2
The MHVIC2114R2 wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband On - Chip
matching design makes it usable from 1600 to 2600 MHz. The linearity
performances cover all modulation formats for cellular applications: CDMA and
W - CDMA. The device is in a PFP - 16 flat pack package that provides
excellent thermal performance through a solderable backside contact.
2100 MHz, 27 V, 23 dBm
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Final Application
• Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 =
204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band
Power Gain — 32 dB
IMD — - 30 dBc
Driver Application
• Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 =
96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz,
3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64
DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 32 dB
ACPR — - 58 dBc
• P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• Integrated ESD Protection
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
VGS3
VGS2
VGS1
Quiescent Current
Temperature Compensation
RFin IC
VDS1
VDS2
VDS3/RFout
16
1
CASE 978 - 03
PFP - 16
N.C.
1
16
VGS3
2
15
N.C.
VDS3/RFout
VGS2
3
14
VDS3/RFout
VGS1
4
13
VDS3/RFout
RFin
5
12
VDS3/RFout
RFin
6
11
VDS3/RFout
VDS1
VDS2
7
8
10
9
VDS3/RFout
N.C.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
RF LDMOS Wideband Integrated
Power Amplifier
3 Stages IC
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHVIC2114R2
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Input Power
Pin
5
dBm
Symbol
Value
Table 2. Thermal Characteristics
ARCHIVE INFORMATION
Driver Application
(Pout = +0.2 W CW)
Unit
RθJC
°C/W
Stage 1, 27 Vdc, IDQ1 = 96 mA
Stage 2, 27 Vdc, IDQ2 = 204 mA
Stage 3, 27 Vdc, IDQ3 = 111 mA
11.5
7.52
5.52
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
0 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
240
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,
Pout = 23 dBm, 2110 - 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
29
32
36
dB
Gain Flatness
GF
—
0.3
0.5
dB
Input Return Loss
IRL
—
- 13
- 10
dB
Adjacent Channel Power Ratio
ACPR
—
- 60
- 57
dBc
Group Delay
Delay
—
1.7
—
ns
—
—
0.2
—
°
Phase Linearity
ARCHIVE INFORMATION
Characteristic
Thermal Resistance, Junction to Case
MHVIC2114R2
2
RF Device Data
Freescale Semiconductor
1
16
VDS3
VGS3
+
C1
2
C17
VGS2
3
+
R2
C5
15
C2
13
+
C14
C4
5
ARCHIVE INFORMATION
+
C13
Z3
RF
OUTPUT
C9
11
VDS1
C21
Z5
12
6
VDS2
C15
Z2
Z1
+
C20
Z4
4
RF
INPUT
C19
14
C3
VGS1
R1
C18
+
C8
C7
8
C11
C22
10
C6
+
C12
Quiescent Current
Temperature Compensation
7
+
C16
9
C10
Z1
Z2
Z3
Z4
Z5
PCB
0.323″ x .055″ 50 Ω Microstrip
0.196″ x .176″ Microstrip
0.286″ x .055″ Microstrip
0.150″ x .018″ Microstrip
0.363″ x .055″ Microstrip
Arlon, 0.021″, εr = 2.55
Figure 3. MHVIC2114R2 Test Circuit Schematic
Table 6. MHVIC2114R2 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C5, C8, C12, C14, C19
1 μF Tantalum Chip Capacitors
TAJA105K035R
Kemet
C2, C3, C4, C7, C11, C18
0.01 μF Chip Capacitors
0805C103K5RACTR
Vishay
C6, C10, C17
6.8 pF Chip Capacitors (ACCU - P)
AVX08051J6R8BBT
AVX
C9
1.5 pF Chip Capacitor (ACCU - P)
AVX08051J1R5BBT
AVX
C15, C16
2.2 pF Chip Capacitors (ACCU - P)
AVX08051J2R2BBT
AVX
C22
1.0 pF Chip Capacitor (ACCU - P)
AVX08051J1R0BBT
AVX
C13, C20, C21
330 μF Electrolytic Capacitors
MCR35V337M10X16
Multicomp
R1, R2, R3
1 kW Chip Resistors (0805)
P1.00KCCT - ND
Panasonic
ARCHIVE INFORMATION
R3
+
MHVIC2114R2
RF Device Data
Freescale Semiconductor
3
VGS1
VGS2
R1
R2
R3
VGS3
C14
C5
C2
C1
C3
C4
C15
C22
C9
MHVIC2114R2
C6
Rev 1
C10
C17
C18 C19
C11
C12
C7
VDD2
C8
VDD3
VDD1
C21
C13
C20
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the
Freescale Semiconductor signature/logo. PCBs may have either Motorola or
Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. MHVIC2114R2 Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C16
MHVIC2114R2
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
S21
30
2.2
2.1
−5
TC = 85_C
2.0
10
−15
S11
0
−20
−10
−25
S11 (dB)
−10
DELAY, (nSEC)
S21 (dB)
20
1.9
1.8
1.7
25_C
1.6
1.5
−30_C
1.4
−20
−30
VDD = 27 Vdc, Pout = 23 dBm CW
1.3
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−30
−35
1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
2110
2120
2130
2140
2150
2160
f, FEQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Broadband Frequency Response
Figure 6. Delay versus Frequency
2170
2180
2170
2180
−18
36
TC = −30_C
32
25_C
28
85_C
24
VDD = 27 Vdc, Pout = 23 dBm CW
20
2100
2120
2130
2140
VDD = 27 Vdc, Pout = 23 dBm CW
−17
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−16
TC = 85_C
−15
25_C
−14
−13
−12
−30_C
−11
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
2110
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
1.2
2100
40
2150
2160
2170
2180
−10
2100
2110
2120
2130
2140
2150
2160
f, FREQUENCY (MHz)
f, FREQUENCY, (MHz)
Figure 7. Power Gain versus Frequency
Figure 8. Input Return Loss versus Frequency
40
−10
38
36
−20
TC = −30_C
34
TC = −30_C
25_C
32
30
S21 PHASE(_)
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
VDD = 27 Vdc, Pout = 23 dBm CW
85_C
28
ARCHIVE INFORMATION
40
−30
25_C
40
26
24
85_C
−50
VDD = 27 Vdc, f = 2140 MHz
VDD = 27 Vdc, f = 2140 MHz
22
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
20
15
17.5
20
22.5
25
27.5
30
32.5
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−60
35
37.5
40
15
20
25
30
35
40
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 9. Power Gain versus Output Power
Figure 10. S21 Phase versus Output Power
45
MHVIC2114R2
RF Device Data
Freescale Semiconductor
5
VDD = 27 Vdc
3GPP Test Model 1
64 DPCH
−35
−40
−45
2110 MHz
−50
2170 MHz
−55
2140 MHz
−60
−65
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
−20
−30
VDD = 27 Vdc
Pout = 23 dBm Two−Tone Avg.
Tone Spacing = 100 kHz
IDQ3 = 100 mA
−40
111 mA
122 mA
3rd Order
−50
122 mA
−60
100 mA
111 mA
−70
5th Order
−80
−90
2000
2050
2100
2150
2200
2250
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 11. W - CDMA ACPR versus Output Power
Figure 12. Two - Tone Intermodulation
Distortion Products versus Frequency
−10
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
VDD = 27 Vdc, f = 2140 MHz
Pout = 7.5 W, Two−Tone Avg.
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−80
0
10
20
30
40
50
60
70
80
90
100
110
VBIAS1
VBIAS2
VDD = 27 Vdc, f = 2140 MHz
R1 = R2 = R3 = 1000 Ohms
VBIAS3
−20
0
TONE SPACING (MHz)
40
2
4.4
IGS1 & IGS2
4.3
4.2
1.8
1.6
1.4
4.1
1.2
3.9 VGS3
VDD = 27 Vdc, f = 2140 MHz
R1 = R2 = R3 = 1000 Ohms
VGS1 & VGS2 1
0.8
3.8
0.6
3.7
0.4
3.6 IGS3
0.2
3.5
−40 −30 −20 −10
80
Figure 14. Fixture Bias versus Temperature
4.5
4
60
T, TEMPERATURE (C)
Figure 13. Two - Tone Intermodulation Distortion
Products versus Tone Spacing
VGS, IC GATE BIAS VOLTAGE (V)
20
IGS, GATE BIAS CURRENT (A)
−70
7
6.75
6.5
6.25
6
5.75
5.5
5.25
5
4.75
4.5
4.25
4
3.75
3.5
3.25
3
−40
2300
100
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
−30
VBIAS, FIXTURE BIAS VOLTAGE (V)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
0
0
10 20 30 40
50 60 70 80 90 100
T, TEMPERATURE (C)
Figure 15. Gate Bias versus Temperature
MHVIC2114R2
6
RF Device Data
Freescale Semiconductor
f = 2170 MHz
Zload
f = 2110 MHz
f = 2110 MHz
Zin
ARCHIVE INFORMATION
Zo = 50 Ω
VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm
Zin
f
MHz
Zin
Ω
Zload
Ω
2110
57.9 - j12.1
1.1 + j2.7
2140
50.6 - j18.9
1.1 + j3.4
2170
42.3 - j21.1
1.2 + j3.7
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
ARCHIVE INFORMATION
f = 2170 MHz
Z
load
Figure 16. Series Equivalent Input and Load Impedance
MHVIC2114R2
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
h X 45 _
A
1
14 x e
16
D
e/2
D1
8
9
E1
8X
ARCHIVE INFORMATION
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉ
ÇÇ
ÇÇ
ÉÉ
b1
Y
c
A A2
c1
b
DATUM
PLANE
SEATING
PLANE
H
M
ccc C
q
W
GAUGE
PLANE
W
L
1.000
0.039
DETAIL Y
C A
SECT W - W
L1
C
aaa
A1
CASE 978 - 03
ISSUE C
PFP- 16
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−− 0.600
0_
7_
0.200
0.200
0.100
ARCHIVE INFORMATION
E2
MHVIC2114R2
8
RF Device Data
Freescale Semiconductor
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
How to Reach Us:
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHVIC2114R2
Document
Number:Data
MHVIC2114R2
RF Device
Rev. 4,
8/2006
Freescale
Semiconductor
9