Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF5S19060MR1 MRF5S19060MBR1 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S19060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S19060MBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 218.8 1.25 W W/°C Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit ARCHIVE INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 12 W CW RθJC 0.80 °C/W 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19060MR1 MRF5S19060MBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 225 μAdc) VGS(th) 2.5 — 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc) VGS(Q) — 3.8 — Vdc Drain - Source On - Voltage (VGS = 5 Vdc, ID = 2.25 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.25 Adc) gfs — 5 — S Crss — 1.5 — pF On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Gps 12.5 Drain Efficiency ηD 21 23 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 12 -9 dB Power Gain Adjacent Channel Power Ratio Input Return Loss 14 16 dB ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics 1. Part is internally matched both on input and output. (continued) MRF5S19060MR1 MRF5S19060MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Pulse Peak Power (VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs, 1% Duty Cycle) Psat — 110 — W Video Bandwidth (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing = 1 MHz to VBW, Δ IM3<2dB) VBW — 35 — MHz ARCHIVE INFORMATION ARCHIVE INFORMATION Typical RF Performance (50 ohm system) MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 3 Z11 VBIAS VSUPPLY R1 + R2 C1 Z6 C2 C3 + + + C4 C5 C6 Z9 Z10 R3 Z1 Z2 Z3 Z4 Z5 C7 Z8 RF OUTPUT C12 DUT C8 ARCHIVE INFORMATION Z7 C9 C10 C11 Z12 C13 Z1 Z2* Z3* Z4* Z5 Z6 Z7 0.250″ 0.500″ 0.500″ 0.515″ 0.480″ 1.140″ 0.600″ x 0.083″ x 0.083″ x 0.083″ x 0.083″ x 1.000″ x 0.080″ x 1.000″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z8* Z9* Z10 Z11 Z12 PCB + + C14 C15 0.420″ x 0.083″ Microstrip 0.975″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.700″ x 0.080″ Microstrip 0.700″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1 μF, 35 V Tantalum Capacitor TAJB105K35 AVX C2 10 pF 100B Chip Capacitor 100B10R0CW ATC C3, C7, C12, C13 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C4, C5, C14, C15 10 μF, 35 V Tantalum Capacitors TAJD106K035 AVX C6 220 μF, 63 V Electrolytic Capacitor, Radial 13668221 Philips C8 0.8 pF 100B Chip Capacitor 100B0R8BW ATC C9 1.5 pF 100B Chip Capacitor 100B1R5BW ATC C10 1.0 pF 100B Chip Capacitor 100B1R0BW ATC C11 0.2 pF 100B Chip Capacitor 100B0R2BW ATC R1, R2 10 kW, 1/4 W Chip Resistors (1206) R3 10 W, 1/4 W Chip Resistors (1206) ARCHIVE INFORMATION RF INPUT MRF5S19060MR1 MRF5S19060MBR1 4 RF Device Data Freescale Semiconductor VDD VGG C3 R1 R2 C1 C2 C4 C5 R3 C9 CUT OUT AREA C8 C10 C14 C11 C12 C15 C13 MRF5S19060M Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19060MR1/MBR1 Test Circuit Component Layout ARCHIVE INFORMATION ARCHIVE INFORMATION C7 C6 MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 24 14.2 Gps −35 IM3 IRL 14 22 −41 −47 13.8 13.6 1900 1920 1940 1960 1980 −53 2020 2000 −10 −15 −20 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg. 13.8 35 Gps VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, IM3 13.6 13.4 37 ηD 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IRL −31 13.2 13 1900 −37 ACPR 1920 1940 1960 −25 1980 2000 −43 2020 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 14 ηD, DRAIN EFFICIENCY (%) 39 IM3 (dBc), ACPR (dBc) 14.2 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg. IDQ = 1150 mA 16 VDD = 28 Vdc f1 = 1960 MHz, f2 = 1962.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing 950 mA 15 750 mA 14 550 mA 13 350 mA 12 −15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 17 Gps, POWER GAIN (dB) ARCHIVE INFORMATION ACPR −5 ARCHIVE INFORMATION VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 14.4 23 IRL, INPUT RETURN LOSS (dB) ηD IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 14.6 ηD, DRAIN EFFICIENCY (%) 14.8 VDD = 28 Vdc f1 = 1960 MHz, f2 = 1962.5 MHz Two −Tone Measurements, 2.5 MHz Tone Spacing −20 −25 −30 IDQ = 350 mA −35 1150 mA −40 950 mA −45 750 mA −50 550 mA −55 −60 1 10 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S19060MR1 MRF5S19060MBR1 6 RF Device Data Freescale Semiconductor 54 VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA Two −Tone Measurements, Center Frequency = 1960 MHz −15 Pout, OUTPUT POWER (dBm) −20 −25 3rd Order −30 −35 −40 5th Order −45 7th Order P1dB = 48.65 dBm (73.3 W) 51 Actual 50 49 48 47 VDD = 28 Vdc, IDQ = 750 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 46 45 −55 0.1 44 10 Ideal 52 −50 1 P3dB = 49.4 dBm (87 W) 53 100 30 31 32 33 34 35 36 37 38 39 40 41 42 43 TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power TC = −30_C ηD VDD = 28 Vdc, IDQ = 750 mA 25_C f1 = 1960 MHz, f2 = 1962.5 MHz 85_C 2−Carrier N−CDMA, 2.5 MHz Carrier 85_C IM3 Spacing, 1.2288 MHz Channel 25_C Bandwidth, PAR = 9.8 dB −30_C @ 0.01% Probability (CCDF) ACPR 85_C 25_C −30_C Gps −30_C 25_C 85_C 35 30 25 20 15 10 5 −10 −20 −30 −40 −50 −60 −70 IM3, (dBc), ACPR (dBc) 40 −80 0 −90 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16 16 −30_C 25_C 50 15 14 40 85_C 13 85_C VDD = 28 Vdc IDQ = 750 mA f = 1960 MHz 12 30 ηD 20 Gps 11 10 1 10 10 0 100 Gps, POWER GAIN (dB) 15 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 60 25_C TC = −30_C 44 ARCHIVE INFORMATION −10 ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) ARCHIVE INFORMATION IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 32 V 14 13 28 V 12 11 10 30 24 V 50 IDQ = 750 mA f = 1960 MHz 70 90 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 108 107 ARCHIVE INFORMATION 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW −10 10 −20 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) ARCHIVE INFORMATION MTTF FACTOR (HOURS X AMPS2) 109 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK −TO−AVERAGE (dB) Figure 13. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF5S19060MR1 MRF5S19060MBR1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Zload f = 1990 MHz f = 1930 MHz Zsource f = 1930 MHz Zo = 5 Ω VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg. f MHz Zsource Ω Zload Ω 1930 3.11 - j4.55 2.60 - j3.18 1960 3.06 - j4.38 2.50 - j2.85 1990 2.93 - j4.28 2.44 - j2.53 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION f = 1990 MHz Z load Figure 15. Series Equivalent Source and Load Impedance MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF5S19060MR1 MRF5S19060MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S19060MR1 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF5S19060MR1 MRF5S19060MBR1 12 RF Device Data Freescale Semiconductor MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 13 MRF5S19060MR1 MRF5S19060MBR1 14 RF Device Data Freescale Semiconductor MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF5S19060MR1 MRF5S19060MBR1 Document Number: MRF5S19060M Rev. 5, 5/2006 16 RF Device Data Freescale Semiconductor