MJD2955 (PNP)
MJD3055 (NPN)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC
= 500 mAdc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
1 2
3
MAXIMUM RATINGS
Rating
Max
Unit
VCEO
60
Vdc
Collector−Base Voltage
VCB
70
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD{
20
0.16
W
W/°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
W
1.75
0.014
W/°C
−55 to +150
°C
YWW
J
xx55G
1
2
3
DPAK−3
CASE 369D
STYLE 1
Y
= Year
WW = Work Week
Jxx55 = Device Code
x = 29 or 30
G
= Pb−Free Package
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
DPAK
CASE 369C
STYLE 1
4
Symbol
Collector−Emitter Voltage
YWW
J
xx55G
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note1)
RqJA
71.4
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 8
1
Publication Order Number:
MJD2955/D
MJD2955 (PNP) MJD3055 (NPN)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
60
−
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
−
50
mAdc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
−
−
0.02
2
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
−
−
0.02
2
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
−
0.5
20
5
100
−
−
−
1.1
8
OFF CHARACTERISTICS
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage (Note 2)
(IC = 4 Adc, VCE = 4 Vdc)
VBE(on)
−
1.8
Vdc
fT
2
−
MHz
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ORDERING INFORMATION
Device
MJD2955
MJD2955G
MJD2955−001
MJD2955−001G
MJD2955T4
MJD2955T4G
MJD3055
Package Type
Shipping †
DPAK
369C
DPAK
(Pb−Free)
75 Units / Rail
DPAK−3
369D
DPAK
(Pb−Free)
DPAK
2500 Tape & Reel
DPAK
(Pb−Free)
DPAK
MJD3055G
DPAK
(Pb−Free)
MJD3055T4
DPAK
MJD3055T4G
Package
369C
75 Units / Rail
2500 Tape & Reel
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MJD2955 (PNP) MJD3055 (NPN)
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
TC
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
500
VCE = 2 V
100
25°C
−55 °C
50
30
20
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.1
0.2
0.4
0.6
1
2
Figure 2. DC Current Gain
Figure 3. Turn−On Time
4
6
5
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
3
2
TJ = 25°C
1
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.4
0.2
0.06 0.1
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)
μ
V, VOLTAGE (VOLTS)
0.6
td @ VBE(off) ≈ 5 V
IC, COLLECTOR CURRENT (AMP)
1
0.8
0.1
0.03
0.02
1.4
1.2
tr
0.3
0.2
0.07
0.05
10
5
0.01
TJ = 25°C
VCC = 30 V
IC/IB = 10
1
0.7
0.5
TJ = 150°C
t, TIME (s)
μ
hFE , DC CURRENT GAIN
300
200
2
ts
0.7
0.5
0.3
0.2
tf
0.1
VCE(sat) @ IC/IB = 10
0.2 0.3
0.5
1
2
3
5
0.07
0.05
0.06 0.1
10
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages, MJD3055
Figure 5. Turn−Off Time
http://onsemi.com
3
2
4
6
MJD2955 (PNP) MJD3055 (NPN)
2
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
VCC
+30 V
25 ms
RC
+11 V
0
1.2
SCOPE
RB
−9 V
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 3 V
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
−4 V
0.4
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCE(sat) @ IC/IB = 10
0
0.1
0.2 0.3
0.5
1
2 3
IC, COLLECTOR CURRENT (AMP)
5
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
10
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 6. “On” Voltages, MJD2955
1
0.7
0.5
Figure 7. Switching Time Test Circuit
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.05
0.02
0.01
0.03
0.02
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
IC, COLLECTOR CURRENT (AMP)
10
5
3
2
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
1
1ms
0.5
0.3
5ms
0.1
dc
WIRE BOND LIMIT
THERMAL LIMIT TC = 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
0.05
0.03
0.02
0.01
0.6
500ms
TJ = 150°C
1
2
4
6
10
20
40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
60
Figure 9. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
4
MJD2955 (PNP) MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
MJD2955 (PNP) MJD3055 (NPN)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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6
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For additional information, please contact your
local Sales Representative.
MJD2955/D