PD- 93809
IRF7353D2
FETKY MOSFET / Schottky Diode
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Co-Pack HEXFET® Power MOSFET and
Schottky Diode
Ideal For Buck Regulator Applications
N-Channel HEXFET power MOSFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = 30V
RDS(on) = 0.029Ω
Schottky VF = 0.52V
T op V ie w
Description
The FETKY family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
SO-8
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Continuous Drain Current ➃
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Pulsed Drain Current ➀
Power Dissipation ➃
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
VGS
dv/dt
TJ, TSTG
Maximum
Units
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Junction-to-Ambient
RθJA
Maximum
Units
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
➂ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➃ Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
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MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.023
0.032
—
14
—
—
—
—
22
2.6
6.4
8.1
8.9
26
18
650
320
130
Max. Units
Conditions
—
V
V GS = 0V, ID = 250µA
0.029
VGS = 10V, ID = 5.8A
Ω
0.046
VGS = 4.5V, ID = 4.7A
—
V
VDS = VGS, ID = 250µA
—
S
VDS = 24V, ID = 5.8A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 55°C
100
VGS = 20V
nA
-100
V GS = -20V
33
ID = 5.8A
3.9
nC
VDS = 24V
9.6
VGS = 10V (see figure 8)
12
VDD = -5V
13
ID = 1.0A
ns
39
RG = 6.0Ω
26
R D = 15Ω
—
VGS = 0V
—
pF
VDS = 25V
—
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Body Diode Forward Voltage
trr
Reverse Recovery Time (Body Diode)
Qrr
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ. Max. Units
—
2.5
A
—
30
0.78 1.0
V
45
68
ns
58
87
nC
Conditions
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
IF (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.2
A
2.0
200
20
A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
V
0.52
0.79
0.30
mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc (100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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IRF7353D2
Power MOSFET Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
T J = 150°C
10
V D S = 10V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
V G S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
5.0
A
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1
V D S , Drain-to-Source Voltage (V)
V D S , Drain-to-Source Voltage (V)
3
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IRF7353D2
Power MOSFET Characteristics
V G S = 4.5V
0.036
0.032
0.028
0.024
V G S = 10V
0.020
0
10
20
30
40
A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.040
0.12
0.10
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
0
I D , Drain Current (A)
C , Capacitance (pF)
900
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
C oss
600
C rss
0
A
1
10
V D S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
15
ID = 5.8A
100
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
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12
VDS = 15V
C iss
300
9
Fig 6. Typical On-Resistance Vs. Gate
Voltage
VGS , Gate-to-Source Voltage (V)
V GS
C is s
C rs s
C o ss
6
V G S , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain
Current
1200
3
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A
IRF7353D2
Power MOSFET Characteristics
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
I S D , Reverse Drain Current (A)
100
T J = 150°C
10
TJ = 25°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
V S D , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
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Schottky Diode Characteristics
100
100
T J = 150°C
Reverse Current - IR (mA)
10
T J = 1 50 °C
125°C
100°C
1
75°C
50°C
0.1
25°C
0.01
A
0.001
T J = 1 25 °C
0
5
10
15
20
25
30
Reverse Voltage - V R (V)
T J = 2 5 °C
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
( )
Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
A llow a ble A m b ient T em pera ture - (°C )
In sta n ta n e ou s Fo rw a rd Cu rren t - I F (A )
10
160
V r = 8 0 % R ated
R t hJA = 6 2.5° C /W
Sq uare wave
140
120
100
DC
80
60
D
D
D
D
D
40
20
= 3/4
= 1/2
=1 /3
= 1/4
= 1/5
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Av era ge F orw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
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IRF7353D2
SO-8 Package Details
D IM
D
-B -
5
E
-A -
5
A
8
7
6
5
1
2
3
4
e
6X
H
0.2 5 (.0 10 )
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
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IRF7353D2
SO-8 Tape and Reel
T ER M IN A L N U M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E ED D IR E C TIO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ) .
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 .
3 3 0.0 0
( 1 2 .9 9 2 )
M A X.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
N O TE S :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T ER .
2 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
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