PD- 91647C
IRF7523D1
FETKY MOSFET / Schottky Diode
●
●
●
●
●
Co-packaged HEXFET® Power MOSFET
and Schottky Diode
N-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
Micro8TM Footprint
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = 30V
RDS(on) = 0.11Ω
Schottky Vf = 0.39V
T op V ie w
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
TM
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
I DM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS@10V➃
Pulsed Drain Current ➀
Power Dissipation ➃
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
Units
2.7
2.1
21
1.25
0.8
10
± 20
6.2
-55 to +150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient ➃
Maximum
Units
100
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
3/17/99
2
IRF7523D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.090
0.140
—
—
—
—
—
—
7.8
1.2
2.5
4.7
10
12
5.3
210
80
32
Max. Units
Conditions
—
V
VGS = 0V, ID = 250µA
0.130
VGS = 10V, ID = 1.7A
Ω
0.190
VGS = 4.5V, ID = 0.85A
—
V
VDS = VGS, ID = 250µA
—
S
VDS = 10V, ID = 0.85A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
12
ID = 1.7A
1.8
nC VDS = 24V
3.8
VGS = 10V (see figure 6) ➂
—
VDD = 15V
—
ID = 1.7A
ns
—
RG = 6.1Ω
—
RD = 8.7Ω ➂
—
VGS = 0V
—
pF
VDS = 25V
—
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode) —
—
1.25
A
I SM
Pulsed Source Current (Body Diode)
—
—
21
VSD
Body Diode Forward Voltage
—
—
1.2
V
trr
Reverse Recovery Time (Body Diode) — 40
60
ns
Q rr
Reverse Recovery Charge
— 48
72
nC
Conditions
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
Conditions
1.9
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
1.3
TA = 70°C
See Fig.14
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
A
with VRRM applied
Schottky Diode Electrical Specifications
V FM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7523D1
Power Mosfet Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
I D, D rain-to-S ource C urrent (A )
I D , D rain-to-S ource C urrent (A )
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
TOP
10
1
3.0V
20µ s P U LS E W ID TH
TJ = 25°C
A
0.1
0.1
1
10
3.0V
1
20µ s P U LS E W ID TH
TJ = 150°C
A
0.1
0.1
10
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
I S D , R everse D rain C urrent (A )
I D , D ra in -to-S o urc e C urren t (A )
1
V D S, D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
T J = 2 5 °C
10
T J = 1 5 0 °C
1
V DS = 10V
2 0 µ s P U L S E W ID T H
0.1
3.0
3.5
4.0
4.5
5.0
5.5
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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6.0
A
10
TJ = 150 °C
T J = 25°C
1
V G S = 0V
0.1
0.4
0.8
1.2
1.6
A
2.0
V S D , S ource-to-D rain V oltage (V )
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7523D1
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
Power Mosfet Characteristics
I D = 1.7A
1.5
1.0
0.5
V G S = 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120
A
0.3
VGS = 10V
0.2
0.1
VGS = 4.5V
0.0
A
0
140 160
2
T J , Junction T em perature (°C )
I
Fig 5. Normalized On-Resistance
Vs. Temperature
6
8
D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
100
0.16
RDS (on) , Drain-to-Source On Resistance (Ω)
4
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
0.14
0.12
I
= 2.7A
0.10
10µ s
10
100µ s
1m s
1
0.08
0.06
A
2
6
V
GS
10
14
, Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
10m s
T A = 25°C
T J = 150°C
S ingle P ulse
0.1
1
A
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRF7523D1
Power Mosfet Characteristics
V GS
C iss
C rss
C oss
300
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
C , C apacitanc e (pF )
400
C is s
C os s
200
C rs s
100
0
A
1
10
I D = 1.7A
V D S = 24V
V D S = 15V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
100
0
V D S , D rain-to-S ource V oltage (V )
2
4
6
8
10
A
12
Q G , Total G ate C harge (nC )
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7523D1
Schottky Diode Characteristics
Reverse Current - IR (mA)
100
TJ = 150°C
10
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
5
10
15
20
25
30
1
Reverse Voltage - V R (V)
T J = 1 5 0 °C
T J = 1 2 5 °C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 2 5 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
F o rw
a rd V o lta
g e D ro pDrop
- V FM
Forward
Voltage
- V(V
F )(V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
A llow ab le A m b ient Tem p era ture - (°C )
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
10
160
V r = 80% R ated
R t h JA = 1 00°C /W
Sq uare wave
140
120
100
80
D
D
D
D
D
60
40
= 3/4
= 1/2
= 1/3
= 1/4
= 1/5
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v era ge F orw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7523D1
Micro8TM Package Details
LE AD A S S IG N M EN TS
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G LE
DUAL
8 7 6 5
3
IN C H E S
D IM
D
H
E
0.2 5 (.0 1 0)
-A-
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S 2 G 2
1 2 3 4
e
6X
M IL LIM E TE R S
M IN
M AX
M IN
A
.0 36
.0 44
0 .9 1
M AX
1 .11
A1
.0 04
.0 08
0 .1 0
0 .20
B
.0 10
.0 14
0 .2 5
0 .36
C
.0 05
.0 07
0 .13
0.18
D
.1 16
.1 20
2 .95
3.05
e
.0 25 6 B A SIC
0.6 5 BA S IC
e1
.0 12 8 B A SIC
0.3 3 BA S IC
E
.1 16
.1 20
2.9 5
3 .0 5
H
.1 88
.1 98
4 .78
5 .03
L
.0 16
.0 26
0 .4 1
0 .66
θ
0°
6°
0°
6°
e1
R EC O M M E N D E D F O O TP R IN T
θ
1.04
( .0 4 1 )
8X
A
-C B
0.10 (.00 4)
A1
8X
0.08 (.0 03)
M
C A S
L
8X
B S
0 .3 8
8X
( .0 15 )
C
8X
3 .2 0
( .1 26 )
4.24
5 .2 8
( .16 7 ) ( .2 08 )
NO TE S :
1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
0.65 6X
( .02 56 )
Part Marking
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7
IRF7523D1
Micro8TM Tape & Reel
T ER M IN AL N U M B E R 1
12.3 ( .48 4 )
11.7 ( .46 1 )
8.1 ( .31 8 )
7.9 ( .31 2 )
F E ED D IR EC T IO N
NOTES:
1 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
330.00
(12 .9 92 )
MAX.
14.40 ( .5 66 )
12.40 ( .4 88 )
NO TES :
1. C O N T R O LL IN G D IM E N S IO N : M ILL IM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -481 & E IA -541.
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Data and specifications subject to change without notice . 3/99
8
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