19-3178; Rev 0; 2/04 KIT ATION EVALU E L B A AVAIL Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset A sequence input allows the outputs to either power up together, or for the DC-DC regulator to power up first and each LDO controller to power up in sequence. An input power-fail output (PFO) is provided for input power-fail warning, such as in dying-gasp applications. A power-on reset circuit with a 140ms delay is also included to indicate when all outputs have achieved regulation and stabilized. Applications xDSL, Cable, ISDN Modems, and Routers Wireless Routers Features ♦ Low-Cost DC-DC Controller with Two LDOs ♦ Wide Input Range: 4.5V to 28V ♦ 300kHz to 1.4MHz Adjustable Switching Frequency ♦ Low Noise for High Data-Rate xDSL Applications ♦ ♦ ♦ ♦ Synchronizable to External Clock Adjustable Soft-Start Lossless Adjustable Foldback Current Limit Power-On Reset with 140ms Delay ♦ Adjustable Input Power-Fail Warning for Dying Gasp ♦ Selectable Output-Voltage Sequencing or Output-Voltage Tracking Ordering Information PART TEMP RANGE PIN-PACKAGE MAX8513EEI -40°C to +85°C 28 QSOP MAX8514EEI -40°C to +85°C 28 QSOP MAX8514AEI -40°C to +125°C 28 QSOP Functional Diagram VIN (4.5V TO 28V) MAX8513 ON OFF SYNC OUTPUT POWER-ON RESET STEPDOWN CONTROLLER LDO CONTROLLER 1 VOUT2 (0.8V TO VOUT1) Set-Top Boxes Automotive Dashboard Electronics INPUT POWERFAIL MONITOR Pin Configurations appear at end of data sheet. VOUT1 (1.25V TO 5.5V) LDO CONTROLLER 2 VOUT3 (0.8V TO 27V) ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX8513/MAX8514 General Description The MAX8513/MAX8514 integrate a voltage-mode PWM step-down DC-DC controller and two LDO controllers, a voltage monitor, and a power-on reset for the lowest-cost power-supply and monitoring solution for xDSL modems, routers, gateways, and set-top boxes. The DC-DC controller switching frequency can be set with an external resistor from 300kHz to 1.4MHz, to allow for the optimization of cost, size, and efficiency. For noisesensitive applications, the DC-DC controller can also be synchronized to an external clock, minimizing noise interference. Operation above 1.1MHz reduces noise for high data-rate xDSL applications. An adjustable soft-start and adjustable foldback current limit provide reliable startup and fault protection. The DC-DC controller output voltage can be set externally to a voltage from 1.25V to 5.5V. Current limiting is accomplished by inductor current sensing for improved efficiency, or by an external sense resistor for better accuracy. The MAX8513/MAX8514s’ first LDO controller is designed to provide a low-cost, high-current regulated output from 0.8V to 5.5V using an N-channel MOSFET or a low-current output using a low-cost NPN transistor. The MAX8513’s second regulator can be used to generate 0.8V to 27V output with a low-cost PNP transistor. Both LDO regulators can operate either from the DC-DC controller output or from a higher voltage derived with a flyback overwinding on the DC-DC converter inductor. The MAX8514’s second LDO regulator is designed to provide a negative output with an NPN transistor. MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset ABSOLUTE MAXIMUM RATINGS IN, DRV3P, SUP2 to GND.......................................-0.3V to +30V DRV2 to GND ..........................................-0.3V to (VSUP2 + 0.3V) DRV3N to GND......................(VSUP3N - 28V) to (VSUP3N + 0.3V) FREQ, PFI, PFO, POR, SUP3N, SYNC/EN, CSP, CSN to GND ................................................-0.3V to +6V VL to GND ...................-0.3V to the lesser of (VIN + 0.3V) or +6V COMP1, FB1, FB2, FB3P, FB3N, REF, ILIM, SS, SEQ to GND......................................-0.3V to (VVL + 0.3V) PVL to PGND ............................................................-0.3V to +6V DL to PGND...............................................-0.3V to (VPVL + 0.3V) BST to LX..................................................................-0.3V to +6V DH to LX ....................................................-0.3V to (VBST + 0.3V) PGND to GND .......................................................-0.3V to +0.3V VL Short Circuit to GND .............................................Continuous Continuous Power Dissipation (TA = +70°C) 28-Pin QSOP (derate 10.8mW/°C above +70°C).........860mW Operating Temperature Range MAX8513EEI, MAX8514EEI .............................-40°C to +85°C MAX8514AEI..................................................-40°C to +125°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS GENERAL IN Operating Range IN = VL 5.5 28.0 4.5 5.5 V IN Supply Current VFB1 = 1.3V, VFB2 = VFB3 = 1.0V, does not include switching current to PVL and BST, SYNC/EN = VL 2.6 3.2 mA IN Shutdown Current VSYNC/EN = 0, RFREQ = 50kΩ 200 300 µA 5 5.25 V 560 mV VL REGULATOR VL Output Voltage VIN = 6V to 28V, IVL = 0.1mA to 40mA VL Dropout Voltage From IN to VL, VIN = 5V, IVL = 40mA VL Line Regulation VIN = 6V to 28V, IVL = 5mA VL Undervoltage Threshold VL rising, VHYST = 675mV (typ) 4.75 0.05 3.6 % 4.2 V OUT1 (BUCK CONVERTER) Output Voltage Range VOUT1 (Note 1) 1.25 FB1 Regulation Threshold VFB1 1.234 1.25 Error-Amplifier Open-Loop Voltage Gain AVOL 65 90 -200 +10 FB1 Input Bias Current IFB1_BIAS VFB1 = 1.3V Error-Amplifier Gain Bandwidth 5.50 V 1.259 V dB +200 25 nA MHz DH Output-Resistance High RDH_HIGH 1.5 2.55 Ω DH Output-Resistance Low RDH_LOW 1.2 2.1 Ω DL Output-Resistance High RDL_HIGH 2.5 5 Ω DL Output-Resistance Low RDL_LOW 0.7 1.3 Driver Dead Time 2 tdt Starts from VDL = 1V or (VDH - VLX) = 1V 50 _______________________________________________________________________________________ Ω ns Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) PARAMETER Current-Limit Threshold (Positive) Current-Limit Threshold (Negative) SYMBOL VCS VCS MIN TYP MAX VILIM = 2.00V, VCSN = 0 to 5.5V CONDITIONS 246 275 300 VILIM = 0.50V, VCSN = 0 to 5.5V 50 67 81 VILIM = VVL, VCSN = 0 to 5.5V 151 170 188 VILIM = 2.00V, VCSN = 0 to 5.5V -333 -272 -199 VILIM = 0.50V, VCSN = 0 to 5.5V -90 -67 -42 -166 VILIM = VVL, VCSN = 0 to 5.5V -210 CSP and CSN Bias Current VCSP = VCSN = 0 to 5.5V -120 ILIM Bias Current VILIM = 1.25V -5.3 SS Soft-Start Charge Current VSS = 0.6V 15 Soft-Start Discharge Resistance VLX = VIN = 28V, VBST = 33V, VPVL = 5V, VSYNC/EN = 0 LX, BST, PVL Leakage Current FB1 Power-On Reset Threshold 1.08 -5 UNITS mV mV -122 +135 µA -4.7 µA 25 35 µA 100 200 Ω 0.03 20 µA 1.125 1.20 V 28.0 V OUT2 (POSITIVE LDO) SUP2 Operating Range VSUP2 (Note 1) 4.5 DRV2 Clamp Voltage VDRV2 VFB2 = 0.75V 7.75 SUP2 Supply Current SUP2 Shutdown Supply Current VSYNC/EN = 0 FB2 Regulation Voltage VFB2 FB2 Input Bias Current IFB2_BIAS 0.784 VFB2 = 0.75V 9.00 V 160 300 µA 3 10 µA 0.80 0.808 V 0.01 100 nA DRV2 Output Current Limit VIN = 5V, VDRV2 = 5V, VFB2 = 0.77V 15 30 DRV2 Output Current Limit During Soft-Start VIN = 6V, VDRV2 = 5V, VFB2 = 0.70V 8 10 12 mA 0.690 0.720 0.742 V 0.12 0.2 0.36 S 28 V FB2 Power-On Reset Threshold FB2 to DRV2 Transconductance GC2 IDRV2 = +250µA, -250µA mA OUT3P (POSITIVE PNP LDO) (MAX8513 ONLY) DRV3P Operating Range VDRV3P FB3P Regulation Voltage FB3P to DRV3P Large-Signal Transconductance Feedback Input Bias Current Driver Sink Current GC3P 1 VDRV3P = 5V, IDRV3P = 1mA 0.790 0.803 0.816 V VDRV3P = 5V, IDRV3P = 0.5mA to 5mA 0.38 0.6 1.1 S 0.01 100 nA VFB3P = 0.75V VFB3P = 0.75V FB3P POR Threshold FB3P Soft-Start Period DRV3P = 2.5V 15 DRV3P = 4.0V 35 mA 40 0.690 0.720 1312 0.742 V Clock Cycles _______________________________________________________________________________________ 3 MAX8513/MAX8514 ELECTRICAL CHARACTERISTICS (continued) MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset ELECTRICAL CHARACTERISTICS (continued) (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS OUT3N (NEGATIVE NPN LDO CONTROLLER) (MAX8514 ONLY) SUP3N Operating Range (Note 1) 1.5 5.5 V DRV3N Operating Range (Note 1) VSUP3N - 21V VSUP3N - 1.5V V SUP3N Supply Current VDRV3N = 1.5V, VSUP3N = 3.5V, IDRV3N = -1mA (source) 1.1 2 mA FB3N Regulation Voltage VDRV3N = 1.5V, VSUP3N = 3.5V, IDRV3N = -1mA (source) -20 -5 +10 mV 0.225 0.36 0.550 S 60 1000 nA FB3N to DRV3N Large-Signal Transconductance GC3N VDRV3N = 0, IDRV3N = -0.5mA to -5mA (source) Feedback Input Bias Current VFB3N = -100mV Driver Source Current VFB3N = 200mV, VDRV3N = 0, VSUP3N = 3.5V FB3N POR Threshold 13 25 450 500 FB3N Soft-Start Period mA 550 mV Clock Cycles 2048 REFERENCE REF Output Voltage VREF -2µA < IREF < +50µA 1.231 1.25 1.269 RFREQ = 10.7kΩ ±1% from FREQ to GND 1300 1390 1460 RFREQ = 15.0kΩ ±1% from FREQ to GND 933 985 1040 RFREQ = 50.0kΩ ±1% from FREQ to GND 260 290 324 V OSCILLATOR Frequency fS FREQ Resistance-Frequency Product Maximum Duty Cycle (Measured at DH Pin) RFREQ = 10.7kΩ ±1% from FREQ to GND 77 83 91 RFREQ = 15.0kΩ ±1% from FREQ to GND 80 87 95 RFREQ = 50.0kΩ ±1% from FREQ to GND 93 96 99 20 62 RFREQ = 10.7kΩ ±1% from FREQ to GND SYNC/EN Pulse Width Low or high (Note 1) 200 SYNC/EN Frequency Range SYNC/EN input frequency needs to be within ±30% of the value set at the FREQ pin (Note 1) 200 SYNC/EN Input Voltage, High 4 VSYNC/EN = 0 to 5.5V -1 _______________________________________________________________________________________ % ns ns 1850 2.4 SYNC/EN Input Voltage, Low SYNC/EN Input Current MHz × kΩ 15.0 Minimum On-Time (Measured at DH Pin) kHz kHz V 0.8 V +1 µA Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SEQ, PFI, PFO, POR SEQ Input-Voltage High 2.4 V SEQ Input-Voltage Low 0.8 V 1 10 µA IPOR = 1.6mA 10 200 IPOR = 0.1mA, VIN = 1.0V 20 200 0.001 1 µA 140 315 560 ms 1.20 1.22 1.25 V 0.1 100 nA IPFO = 1.6mA 20 200 IPFO = 0.1mA, VIN = 1.0V 10 200 1 SEQ Input Current VSEQ = 0 to VVL POR Output-Voltage Low VFB1, VFB2, VFB3P, VFB3N, out-of-regulation POR Output Leakage Current VFB1, VFB2, and VFB3P or VFB3N, inregulation POR Power-Ready Delay Time From VFB1, VFB2, and VFB3P or VFB3N, inregulation to POR = high impedance PFI Input Threshold Falling, VHYST = 20mV PFI Input Bias Current VPFI = 1.0V mV PFO Output-Voltage Low PFI = 1.1V PFO Output Leakage Current PFI = 1.4V, PFO = 5V 0.001 Junction temperature rising +170 °C 25 °C mV µA THERMAL PROTECTION Thermal Shutdown Thermal-Shutdown Hysteresis ELECTRICAL CHARACTERISTICS (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN MAX 5.5 28.0 4.5 5.5 UNITS GENERAL IN Operating Range IN = VL V IN Supply Current VFB1 = 1.3V, VFB2 = VFB3 = 1.0V, does not include switching current to PVL and BST, SYNC/EN = VL 3.2 mA IN Shutdown Current VSYNC/EN = 0, RFREQ = 50kΩ 300 µA VL REGULATOR VL Output Voltage VIN = 6V to 28V, IVL = 0.1mA to 40mA VL Dropout Voltage From IN to VL, VIN = 5V, IVL = 40mA VL Undervoltage Threshold VL rising, VHYST = 675mV (typ) 4.75 3.6 5.25 V 610 mV 4.2 V _______________________________________________________________________________________ 5 MAX8513/MAX8514 ELECTRICAL CHARACTERISTICS (continued) MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset ELECTRICAL CHARACTERISTICS (continued) (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN MAX UNITS OUT1 (BUCK CONVERTER) Output Voltage Range 1.25 5.50 V FB1 Regulation Threshold VOUT1 VFB1 (Note 1) 1.225 1.265 V Error-Amplifier Open-Loop Voltage Gain AVOL 65 VFB1 = 1.3V -200 dB FB1 Input Bias Current IFB1_BIAS +200 nA DH Output-Resistance High RDH_HIGH 2.55 Ω DH Output-Resistance Low RDH_LOW 2.1 Ω DL Output-Resistance High RDL_HIGH 5 Ω DL Output-Resistance Low RDL_LOW 1.3 Ω VILIM = 2.00V, VCSN = 0 to 5.5V 243 VILIM = 0.50V, VCSN = 0 to 5.5V 49 83 VILIM = VVL, VCSN = 0 to 5.5V 147 190 VILIM = 2.00V, VCSN = 0 to 5.5V -333 -199 VILIM = 0.50V, VCSN = 0 to 5.5V -90 -42 VILIM = VVL, VCSN = 0 to 5.5V -210 -122 CSP and CSN Bias Current VCSP = VCSN = 0 to 5.5V -120 +135 µA ILIM Bias Current VILIM = 1.25V -5.7 -4.3 µA SS Soft-Start Charge Current VSS = 0.6V 15 35 µA 200 Ω 20 µA 1.08 1.20 V V Current-Limit Threshold (Positive) Current-Limit Threshold (Negative) VCS VCS Soft-Start Discharge Resistance VLX = VIN = 28V, VBST = 33V, VPVL = 5V, VSYNC/EN = 0 LX, BST, PVL Leakage Current FB1 Power-On Reset Threshold 303 mV mV OUT2 (POSITIVE LDO) SUP2 Operating Range VSUP2 (Note 1) 4.5 28.0 DRV2 Clamp Voltage VDRV2 VFB2 = 0.75V 7.75 9.00 V 300 µA 10 µA SUP2 Supply Current SUP2 Shutdown Supply Current VSYNC/EN = 0 FB2 Regulation Voltage VFB2 FB2 Input Bias Current IFB2_BIAS 0.775 VFB2 = 0.75V 0.816 V 150 nA DRV2 Output Current Limit VIN = 5V, VDRV2 = 5V, VFB2 = 0.77V 12 DRV2 Output Current Limit During Soft-Start VIN = 6V, VDRV2 = 5V, VFB2 = 0.70V 8 12 mA 0.690 0.742 V 0.11 0.41 S FB2 Power-On Reset Threshold FB2 to DRV2 Transconductance 6 GC2 IDRV2 = +250µA, -250µA _______________________________________________________________________________________ mA Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN MAX UNITS OUT3P (POSITIVE PNP LDO) (MAX8513 ONLY) DRV3P Operating Range VDRV3P FB3P Regulation Voltage FB3P to DRV3P Large-Signal Transconductance VDRV3P = 5V, IDRV3P = 1mA GC3P VDRV3P = 5V, IDRV3P = 0.5mA to 5mA Feedback Input Bias Current VFB3P = 0.75V Driver Sink Current VFB3P = 0.75V 1 28 V 0.780 0.820 V 0.3 1.4 S 100 DRV3P = 2.5V FB3P POR Threshold 15 nA mA 0.690 0.742 V OUT3N (NEGATIVE NPN LDO CONTROLLER) (MAX8514 ONLY) SUP3N Operating Range (Note 1) 1.5 5.5 V DRV3N Operating Range (Note 1) VSUP3N - 21V VSUP3N - 1.5V V SUP3N Supply Current VDRV3N = 1.5V, VSUP3N = 3.5V, IDRV3N = -1mA (source) 2 mA FB3N Regulation Voltage VDRV3N = 1.5V, VSUP3N = 3.5V, IDRV3N = -1mA (source) -20 +10 mV 0.225 0.550 S 1500 nA FB3N to DRV3N Large-Signal Transconductance GC3N VDRV3N = 0, IDRV3N = -0.5mA to -5mA (source) Feedback Input Bias Current VFB3N = -100mV Driver Source Current VFB3N = 200mV, VDRV3N = 0, VSUP3N = 3.5V FB3N POR Threshold 13 mA 450 550 mV -2µA < IREF < +50µA 1.22 1.27 V RFREQ = 10.7kΩ ±1% from FREQ to GND 1300 1500 RFREQ = 15.0kΩ ±1% from FREQ to GND 917 1070 RFREQ = 50.0kΩ ±1% from FREQ to GND 250 335 RFREQ = 10.7kΩ ±1% from FREQ to GND 77 91 RFREQ = 15.0kΩ ±1% from FREQ to GND 80 95 RFREQ = 50.0kΩ ±1% from FREQ to GND 93 99 REFERENCE REF Output Voltage VREF OSCILLATOR Frequency fS Maximum Duty Cycle (Measured at DH Pin) Minimum On-Time (Measured at DH Pin) RFREQ = 10.7kΩ ±1% from FREQ to GND SYNC/EN Pulse Width Low or high (Note 1) 200 SYNC/EN Frequency Range SYNC/EN input frequency needs to be within ±30% of the value set at the FREQ pin (Note 1) 200 62 kHz % ns ns 1850 kHz _______________________________________________________________________________________ 7 MAX8513/MAX8514 ELECTRICAL CHARACTERISTICS (continued) MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset ELECTRICAL CHARACTERISTICS (continued) (VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ = 15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.) PARAMETER SYMBOL CONDITIONS SYNC/EN Input-Voltage High MIN SYNC/EN Input-Voltage Low SYNC/EN Input Current MAX UNITS 0.8 V +1 µA 2.4 VSYNC/EN = 0 to 5.5V -1 V SEQ, PFI, PFO, POR SEQ Input-Voltage High 2.4 SEQ Input-Voltage Low SEQ Input Current VSEQ = 0 to VVL POR Output-Voltage Low VFB1, VFB2, VFB3P, VFB3N out-of-regulation POR Output Leakage Current VFB1, VFB2, and VFB3P or VFB3N, inregulation POR Power-Ready Delay Time From VFB1, VFB2, and VFB3P or VFB3N, inregulation to POR = high impedance PFI Input Threshold Falling, VHYST = 20mV PFI Input Bias Current VPFI = 1.0V PFO Output-Voltage Low PFI = 1.1V PFO Output Leakage Current PFI = 1.4V, PFO = 5V 0.8 V 10 µA IPOR = 1.6mA 200 IPOR = 0.1mA, VIN = 1.0V 200 mV 1 µA 140 560 ms 1.20 1.25 V 300 nA IPFO = 1.6mA 200 IPFO = 0.1mA, VIN = 1.0V 200 Note 1: Guaranteed by design, not production tested. Note 2: Specifications to -40°C are guaranteed by design, not production tested. 8 V _______________________________________________________________________________________ 1 mV µA Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset EFFICIENCY vs. IOUT1 (IOUT2 = 0, IOUT3 = 0) 90 80 40 30 VOUT1 = 3.3V, IOUT1 = 2A VOUT2 = 2.5V, IOUT2 = 1.5A VOUT3 = 12V, IOUT3 = 50mA 20 10 0 7 VIN = 12V 50 40 VIN = 16V 20 3.27 10 3.26 3.25 0.1 0.6 VOUT2 vs. IOUT2 1.1 1.6 2.1 2.6 3.1 3.6 0 4.1 12.20 12.15 VOUT1 (V) 3.31 VOUT3 (V) 3.32 12.00 3.29 2.48 11.90 3.28 2.47 11.85 11.80 2.45 11.75 0.6 0.8 1.0 3.27 VOUT1 = 3.3V AT 1A VOUT2 = 2.5V AT 0.75A 3.26 3.25 0 5 9 10 11 12 13 14 15 16 17 18 OSCILLATOR FREQUENCY vs. INPUT VOLTAGE VOUT1 = 3.3V AT 1A VOUT2 = 2.5V AT 0.75A 12.30 12.25 2.50 2.49 VOUT3 (V) IOUT2 = 1.5A 12.15 12.10 12.05 2.48 12.00 2.47 11.95 2.46 11.90 2.45 IOUT3 = 0 IOUT3 = 50mA VIN (V) RFREQ = 10.7kΩ 1.42 TA = -40°C 1.41 TA = +25°C 1.40 1.39 1.38 1.37 TA = +85°C 1.36 1.35 11.85 9 10 11 12 13 14 15 16 17 18 1.43 OSCILLATOR FREQUENCY (MHz) MAX8513/14 toc07 12.35 MAX8513/14 toc08 VOUT3 vs. VIN 12.20 8 8 VOUT2 vs. VIN IOUT2 = 0 7 7 10 15 20 25 30 35 40 45 50 VIN (V) 2.52 2.51 IOUT1 = 3A IOUT3 (mA) VOUT1 = 3.3V AT 1A VOUT3 = 12V AT 25mA 2.53 1.4 4.0 IOUT1 = 0 IOUT2 (A) 2.55 2.54 1.2 3.5 3.30 11.95 2.46 3.0 3.33 12.05 2.49 2.5 VOUT2 = 2.5V AT 0.75A VOUT3 = 12V AT 25mA 3.34 2.51 2.50 2.0 VOUT1 vs. VIN 12.10 0.4 1.5 3.35 2.52 0.2 1.0 IOUT1 (A) MAX8513/14 toc05 12.25 MAX8513/14 toc04 VOUT1 = 3.3V AT 1A VOUT3 = 12V AT 25mA 0 0.5 VOUT3 vs. IOUT3 2.53 VOUT2 (V) 3.29 IOUT1 (A) 2.55 VOUT2 (V) 3.30 3.28 VIN (V) 2.54 3.31 30 0 9 10 11 12 13 14 15 16 17 18 8 3.32 MAX8513/14 toc06 50 60 MAX8513/14 toc09 60 3.33 VIN = 9V 70 VOUT2 = 2.5V AT 0.75A VOUT3 = 12V AT 25mA 3.34 VOUT1 (V) 70 EFFICIENCY (%) EFFICIENCY (%) 80 3.35 MAX8513/14 toc02 90 VOUT1 vs. IOUT1 100 MAX8513/14 toc01 100 MAX8513/14 toc03 EFFICIENCY vs. INPUT VOLTAGE 7 8 9 10 11 12 13 14 15 16 17 18 VIN (V) 7 8 9 10 11 12 13 14 15 16 17 18 VIN (V) _______________________________________________________________________________________ 9 MAX8513/MAX8514 Typical Operating Characteristics (Circuit of MAX8513 evaluation kit, VIN = 12V, TA = +25°C, fS = 1.4MHz, unless otherwise noted.) MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset Typical Operating Characteristics (continued) (Circuit of MAX8513 evaluation kit, VIN = 12V, TA = +25°C, fS = 1.4MHz, unless otherwise noted.) OUTPUT1 LOAD-TRANSIENT RESPONSE OUTPUT3 LOAD-TRANSIENT RESPONSE MAX8513/14 toc10 MAX8513/14 toc11 IOUT2 = 0.75A, IOUT3 = 25mA IOUT1 = 1A, IOUT2 = 0.75A 50mV/div VOUT1 AC-COUPLED 50mV/div VOUT2 AC-COUPLED VOUT1 AC-COUPLED VOUT2 AC-COUPLED 50mV/div 50mV/div 50mV/div VOUT3 AC-COUPLED VOUT3 AC-COUPLED 100mV/div IOUT1 1A/div 0A IOUT3 50mA/div 5mA 40µs/div 40µs/div SWITCHING WAVEFORMS (ALL OUTPUTS AT FULL LOAD) SYNCHRONIZATION MAX8513/14 toc13 MAX8513/14 toc12 VDH 10V/div 0V VDH 5V/div 0V VDL 5V/div 0V VLX 10V/div 0V VD2 (ANODE) 20V/div 0V VDL 10V/div 0V SYNC/EN 5V/div 0V 1µs/div 200ns/div PFO RESPONSE POR RESPONSE MAX8513/14 toc14 MAX8513/14 toc15 PFO 2V/div 0V POR 5V/div 0V VIN 5V/div 0V VOUT1 2V/div 0V VOUT1 2V/div 0V 0V VOUT2 5V/div 0V VOUT3 10V/div IOUT1 = 2A, IOUT2 = 1.5A, IOUT3 = 50mA 2ms/div 10 100ms/div ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset STAGGERED SEQUENCE (SEQ = GND) TRACKING SEQUENCE (SEQ = VL) MAX8513/14 toc16 MAX8513/14 toc17 SYNC/EN 5V/div 0V SYNC/EN 5V/div 0V VOUT3 5V/div VOUT1 2V/div VOUT2 2V/div VOUT3 5V/div VOUT1 2V/div VOUT2 2V/div 0V 0V 2ms/div 4ms/div OUTPUT1 SHORT CIRCUIT (ALL OUTPUTS AT FULL LOAD) OUTPUT1 SHORT CIRCUIT (ALL OUTPUTS AT NO LOAD) MAX8513/14 toc18 MAX8513/14 toc19 VOUT1 2V/div VOUT1 2V/div 0V 0V VLX 10V/div VLX 10V/div 0V 0V 1L 2A/div IL 2A/div 0A 0A 20µs/div 20µs/div 1.5 VIN = 12V VOUT1 = 3.3V AT 2A VOUT2 = 2.5V AT 1.5A VOUT3 = 12V AT 50mA 1.3 1.1 NOISE (mV) 0.9 MAX8513/14 toc20 OUTPUT RIPPLE AND HARMONICS (MEASURED AT OUT1) 0.7 0.5 0.3 0.1 -0.1 -0.3 -0.5 100 1100 2100 3100 4100 5100 FREQUENCY (kHz) ______________________________________________________________________________________ 11 MAX8513/MAX8514 Typical Operating Characteristics (continued) (Circuit of MAX8513 evaluation kit, VIN = 12V, TA = +25°C, fS = 1.4MHz, unless otherwise noted.) Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset MAX8513/MAX8514 Pin Description 12 PIN NAME MAX8513 MAX8514 PFI 1 1 Power-Fail Input. Connect PFI to an external resistive-divider between IN, PFI, and GND. PFI senses VIN to detect voltage failure. Trip falling threshold at this input is 1.22V, with 20mV of hysteresis. PFO 2 2 Power-Fail Output. Open-drain output that goes low if VPFI < 1.22V. DH 3 3 OUT1 High-Side Gate-Drive Output. DH drives the high-side N-channel MOSFET (Q1 in the Typical Applications Circuits). DH is a floating driver output that swings from LX to BST. LX 4 4 OUT1 High-Side Driver Return Path. The high-side FET driver uses BST and LX for its respective high and low-side supplies. BST 5 5 OUT1 Boost Capacitor Connection for High-Side Gate Drive. Connect a 0.1µF ceramic capacitor from BST to LX with a less than 5mm trace length. DL 6 6 OUT1 Low-Side Gate-Drive Output. DL drives the low-side N-channel MOSFET (Q2 in the Typical Applications Circuits). DL swings from 0 to VPVL. PVL 7 7 OUT1 Gate-Drive Supply Bypass Connection. Connect PVL to VL through a 10Ω resistor (R15), and bypass PVL to PGND with a minimum 1µF capacitor (C1). PGND 8 8 Power-Ground Connection and Low-Side Supply for Dl Driver VL 9 9 Internal +5V Linear-Regulator Bypass Pin. Bypass VL to GND with a minimum 2.2µF ceramic capacitor (C10) and 5mm or less of trace length. VL should be connected to IN when VIN < 5.5V. COMP1 10 10 OUT1 Compensation Node. See the OUT1 Compensation section. FB1 11 11 OUT1 Feedback Input. Connect a resistive-divider (R1, R2) from OUT1 to FB1 to GND to regulate FB1 at 1.25V. FUNCTION FREQ 12 12 Oscillator Frequency-Set Input. A resistor from FREQ to GND sets the oscillator frequency from 300kHz to 1.4MHz (f = 15MHz x kΩ / RFREQ). RFREQ is still required if an external clock is used at SYNC/EN, and the SYNC/EN input frequency should be within ±30% of the frequency set by RFREQ. REF 13 13 1.25V Reference Output. Connect a 0.1µF or larger ceramic capacitor (C9) from REF to GND. GND 14 14 Analog/Signal Ground FB2 15 15 OUT2 Feedback Input. Connect a resistive-divider (R5, R6) from OUT2 to FB2 to GND to regulate FB2 to 0.8V. DRV2 16 16 OUT2 Gate Drive. DRV2 connects to the gate of an external N-channel MOSFET to form a positive linear voltage regulator. SUP2 17 17 Supply Input for DRV2. Connect to a voltage source of at least 1V above the maximum desired DRV2 gate voltage. ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset PIN NAME MAX8513 MAX8514 SEQ 18 18 Connect to VL for output tracking. Connect to GND for output staggered sequence. Staggered sequence ramps up VOUT2 and VOUT3 softly to avoid glitches on the previous voltage due to charging of the LDO’s output capacitors. FUNCTION SYNC/EN 19 19 Shutdown Control and Synchronization Input. There are three operating modes: • When SYNC/EN is low, the controller is off but the VL regulator is still running. • When SYNC/EN is high, the controller is enabled with the switching frequency set by RFREQ. • When SYNC/EN is driven by an external clock, the controller is enabled and switches at the external clock frequency. N.C. 20 — No Connection. Not internally connected. Connect to GND or leave floating. SUP3N — 20 OUT3N Base-Drive Supply. Connect SUP3N to any positive voltage between 1.5V and 5.5V to provide power for the negative linear-regulator transistor driver. DRV3P 21 — OUT3P Base Drive. Connect DRV3P to the base of an external PNP pass transistor to form a positive linear voltage regulator. DRV3N — 21 OUT3N Base Drive. Connect DRV3N to the base of an external NPN pass transistor to form a negative linear voltage regulator. IN 22 22 Main Voltage Input (4.5V to 28V). Bypass IN to GND, close to the IC, with a minimum 1µF ceramic capacitor (C2). IN powers the linear regulator whose output is VL. POR 23 23 Power-On Reset. Open-drain output that goes high after all outputs reach the regulation limit and a 315ms delay time has elapsed. FB3P 24 — OUT3P Feedback Input. FB3P is referenced to 0.8V and connects to a resistive-divider (R13, R14) to control a positive linear voltage regulator. FB3N — 24 OUT3N Feedback Input. Connect a resistive-divider (R13, R14) from OUT1 to FB3N to OUT3N to regulate FB3N to 0V. ILIM 25 25 ILIM Set Input. Connect a resistive-divider (R17, R18) from OUT1 to ILIM to GND. See the Current Limit section. CSP 26 26 Positive Current-Sense Input. Used to detect OUT1 current limit. CSN 27 27 Negative Current-Sense Input. Used to detect OUT1 current limit. SS 28 28 Analog Soft-Start Control Input. This pin goes into the positive input of the VOUT1’s error amplifier. When the MAX8513/MAX8514 are turned on, SS is at GND and charges up to 1.25V with a constant 25µA. Connect a capacitor (C13) from SS to GND for the desired soft-start time. ______________________________________________________________________________________ 13 MAX8513/MAX8514 Pin Description (continued) MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset IN SS BST SYNC/EN S Q DH R Q LX PVL VL BIAS 1/7.5 DL 5µA PGND GND CSP FREQ PWM COMP. SEQ CSN 1VP-P FB1 ERROR AMP PFI COMP 1.25V PFO N ILIM SUP2 0.8V POR DRV2 GC2 N FB2 0.8V GC3P REF REFERENCE DRV3P N N FB3P MAX8513 Figure 1. MAX8513 Functional Diagram 14 ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset MAX8513/MAX8514 IN SS BST SYNC/EN S Q DH R Q LX PVL VL BIAS 1/7.5 DL 5µA GND PGND CSP FREQ PWM COMP. SEQ CSN 1VP-P FB1 ERROR AMP PFI COMP 1.25V PFO N ILIM SUP2 REFERENCE 0.8V POR DRV2 GC2 N FB2 SUP3N P REF GC3N P DRV3N FB3N MAX8514 Figure 2. MAX8514 Functional Diagram ______________________________________________________________________________________ 15 MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset Detailed Description The MAX8513/MAX8514 combine a step-down DC-DC converter and two LDOs, providing three output voltages for xDSL modem and set-top box applications. The switching frequency is set with an external resistor connected from the FREQ pin to GND, and is adjustable from 300kHz to 1.4MHz. The main stepdown DC-DC controller operates in a voltage-mode, pulse-width-modulation (PWM) control scheme. The MAX8513/MAX8514 include two low-cost LDO controllers capable of delivering current from the DC-DC main output, an extra winding, the input, or from an alternate supply voltage. The first LDO controller drives an external NMOS or NPN with a maximum drive of 7.75V. The second LDO controller provides either a positive 0.8V to 27V output using an external PNP pass device, or a negative -1V to -18V output with an external NPN pass device. DC-DC Controller The MAX8513/MAX8514 step-down DC-DC converters use a PWM voltage-mode control scheme. An internal high-bandwidth (25MHz) operational amplifier is used as an error amplifier to regulate the output voltage. The output voltage is sensed and compared with an internal 1.25V reference to generate an error signal. The error signal is then compared with a fixed-frequency ramp by a PWM comparator to give the appropriate duty cycle to maintain output-voltage regulation. At the rising edge of the internal clock and when DL (the lowside MOSFET gate drive) is at 0V, the high-side MOSFET turns on. When the ramp voltage reaches the error-amplifier output voltage, the high-side MOSFET latches off until the next clock pulse. During the highside MOSFET on-time, current flows from the input through the inductor to the output capacitor and load. At the moment the high-side MOSFET turns off, the energy stored in the inductor during the on-time is released to support the load. The inductor current ramps down through the low-side MOSFET body diode. After a fixed delay, the low-side MOSFET turns on to shunt the current from its body diode for a lower voltage drop to increase the efficiency. The low-side MOSFET turns off at the rising edge of the next clock pulse, and when its gate voltage discharges to zero, the high-side MOSFET turns on after an additional fixed delay and another cycle starts. Current Limit The MAX8513/MAX8514s’ switching regulator senses the inductor current either through the DC resistance of the inductor itself for lossless sensing, or through a series resistor for more accurate sensing. When using the DC resistance of the inductor, an RC filter circuit is needed (see R19, R20, and C14 of the Typical Applications Circuits and the Current-Limit Setting section). When peak voltage across the sensing circuit (which occurs at the peak of the inductor current) exceeds the current-limit threshold set by ILIM, the controller turns off the high-side MOSFET and turns on the low-side MOSFET. The inductor current ramps down and DH turns on again if the inductor current is below the current-limit threshold at the next clock pulse. The MAX8513/MAX8514 current-limit threshold can be set by two external resistors to be proportional to the output voltage with an adjustable offset level, providing foldback current-limit and short-circuit protection. This feature greatly reduces power dissipation and prevents overheating of external components during an indefinite short-circuit at the output. See the Foldback Current Limit section for how to set ILIM with external resistors. The current-limit threshold defaults to 170mV when ILIM is connected to VL, and in this case, the current limit functions as a constant current limit only. The LDO controllers do not have current limit and rely on input current limit for protection. Synchronous-Rectifier Driver (DL) Synchronous rectification reduces the conduction loss in the rectifier by replacing the normal Schottky catch diode with a low-on-resistance MOSFET switch. The MAX8513/MAX8514 also use the synchronous rectifier to ensure proper startup of the boost gate-drive circuit. High-Side Gate-Drive Supply (BST) A flying-capacitor boost circuit (see D1 and C3 in the Typical Applications Circuits) generates the gate-drive voltage for the high-side N-channel MOSFET. On startup, the synchronous rectifier (low-side MOSFET, Q2) forces LX to ground and charges the boost capacitor (C3) to VVL - VDIODE. On the second half-cycle, the controller turns on the high-side MOSFET by closing an internal switch between BST and DH. This boosts the voltage at BST to VVL - VDIODE + VIN, providing the necessary gate-to-source voltage to turn on the highside N-channel MOSFET. The MAX8513/MAX8514 operate in forced-PWM mode, so even under light load the controller maintains a constant switching frequency to minimize noise and possible interference with system circuitry. 16 ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset Undervoltage Lockout If V VL drops below 3.8V, the MAX8513/MAX8514 assume that the supply voltage is too low to make valid decisions. When this happens, the undervoltage lockout (UVLO) circuitry inhibits switching, forces POR and PFO low, and forces DL and DH gate drivers low. After VVL rises above 3.9V, the controller powers up the outputs (see the Startup section). Startup The MAX8513/MAX8514 start switching when VVL rises above the 3.9V UVLO threshold. However, the controller is not enabled unless all three of the following conditions are met: 1) VVL exceeds the 3.9V UVLO threshold. 2) The internal reference exceeds 90% of its nominal value. 3) The thermal limit is not exceeded. Once the MAX8513/MAX8514 assert the internal enable signal, the step-down controller starts switching and enables soft-start. The soft-start circuitry gradually ramps up to the reference voltage to control the rate-of-rise of the step-down controller and reduce input surge currents. The soft-start period is determined by the value of the capacitor from SS to GND (C13 in the Typical Applications Circuits). SS sources a constant 25µA to charge the soft-start capacitor to 1.25V. Output-Voltage Sequencing The MAX8513/MAX8514 can power up in either staggered-output sequencing or output tracking. For staggered-output sequencing, connect SEQ to GND. In this configuration, VOUT1 comes up first. When it reaches 90% of the nominal regulated value, VOUT2 is softly turned on. Once VOUT2 reaches 90% of its nominal regulated value, VOUT3 is softly turned on. Individual soft-start on OUT2 and OUT3 eliminates glitches on the previous stages due to the charging of output capacitors. See the Typical Operating Characteristics section for the startup and staggered-output-sequence waveforms. Output-Voltage Tracking When SEQ is connected to VL, all outputs rise up at the same time and the external series pass transistors are driven fully on until reaching the respective regulation limits. Since the LDOs are powered from the main DCDC step-down converter, either directly or through a coupled winding on the inductor, their outputs track the DC-DC step-down output (OUT1). See the Typical Operating Characteristics section for the startup outputtracking waveforms. Power-On Reset The MAX8513/MAX8514 provide a power-on-reset (POR) signal, which goes high 315ms after all outputs reach 90% of their nominal regulated value. Therefore, by the time POR goes high, all outputs are already stabilized at nominal regulated voltages. See the Typical Operating Characteristics section for the POR waveforms. Input Power-Fail (PFI and PFO) The MAX8513/MAX8514 have a built-in comparator to detect the input voltage with an external resistivedivider at PFI, with a threshold of 1.22V. When the input voltage drops and trips this comparator, the power-fail output (PFO) goes low, while all outputs are still within regulation limits. This is typically used for input powerfail warning for orderly system shutdown. The amount of warning time depends on the input storage capacitor, the input PFI trip voltage level, the main step-down output voltage, the total output power, and the efficiency. See the Design Procedure section for how to calculate the input capacitor to meet the required warning time. Enable and Synchronization The MAX8513/MAX8514 can be turned on with logic high, and off with logic low at SYNC/EN. When SYNC/EN is driven with an external clock, the internal oscillator synchronizes the rising edge of the clock at SYNC/EN to DH going high. When being driven by a synchronization clock signal at SYNC/EN, the controller synchronizes to the external clock within two cycles. The frequency at SYNC/EN needs to be within ±30% of the value set by RFREQ. See the Switching-Frequency Setting section. ______________________________________________________________________________________ 17 MAX8513/MAX8514 Internal 5V Linear Regulator All MAX8513/MAX8514 functions (except for the positive output LDO with an NFET or NPN, and the negative LDO on the MAX8514) are powered from the on-chip low-dropout 5V regulator with its input connected to IN. Bypass the regulator’s output (VL) with a 2.2µF or greater ceramic capacitor. The VIN to VVL dropout voltage is typically 350mV, so when VIN is greater than 5.5V, VVL is typically 5V. If VIN is between 4.5V and 5.5V, short VL to IN. MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset Thermal-Overload Protection Thermal-overload protection limits the total power dissipation in the MAX8513/MAX8514. When the junction temperature exceeds TJ = +170°C, a thermal sensor shuts down the device, forcing DL and DH low and allowing the IC to cool. The thermal sensor turns the part on again after the junction temperature cools by 25°C, resulting in a pulsed output during continuous thermaloverload conditions. During a thermal event, the main step-down converter and the linear regulators are turned off, POR and PFO go low, and soft-start is reset. Design Procedure OUT1 Voltage Setting The output voltage is set by a resistive-divider network from OUT1 to FB1 to GND (see R1 and R2 in the Typical Applications Circuits). Select R2 between 5kΩ and 15kΩ. Then R1 can be calculated by: V R1 = R2 × OUT1 - 1 1.25V Input Power-Fail Setting The PFI input can monitor VIN to determine if it is falling. When the voltage at PFI crosses 1.22V, the output (PFO) goes low. The input voltage value at the PFI trip threshold, VPFI, is set by a resistive-divider network from IN to PFI to GND (see the Typical Applications Circuits). Select R11, the resistor from PFI to GND between 10kΩ and 40kΩ. Then R10, the resistor from PFI to IN, is calculated by: V R10 = R11 × PFI - 1 1.22V Switching-Frequency Setting The resistor connected from FREQ to GND, RFREQ (R7 in the Typical Applications Circuits), sets the switching frequency, fS, as shown by the equation below: fS = 15 × 109 Hz × Ω RFREQ where RFREQ is in ohms. value allows for a smaller inductor but results in higher losses and higher output ripple. A good compromise between size and efficiency is a 30% LIR. Once all of the parameters are chosen, the inductor value is determined as follows: L = VOUT1 × (VIN - VOUT1) VIN × fS × IOUT1_ MAX × LIR where VOUT1 is the main switching regulator output and fS is the switching frequency. Choose a standard value close to the calculated value. The exact inductor value is not critical and can be adjusted to make tradeoffs between size, cost, and efficiency. Lower inductor values minimize size and cost, but also increase the output ripple and reduce the efficiency due to higher peak currents. On the other hand, higher inductor values increase efficiency, but eventually resistive losses due to extra turns of wire exceed the benefit gained from lower AC current levels. Find a lowloss inductor with the lowest possible DC resistance that fits the allotted dimensions. Ferrite cores are often the best choice, although powdered iron is inexpensive and can work well up to 300kHz. The chosen inductor’s saturation current rating must exceed the peak inductor current as calculated below: IPEAK = IOUT1_ MAX + (VIN 2 × L × fS × VIN This peak value should be smaller than the value set at ILIM when VOUT1 is at its nominal regulated voltage (see the Current Limit and Current-Limit Setting sections). In applications where a multiple winding inductor (coupled inductor) is used to generate the supply voltages for the LDOs, the inductance value calculated above is for the winding connected to the DC-DC step-down (primary windings) inductance. The inductance seen from the other windings (secondary windings) is proportional to the square of the turns ratio with respect to the primary winding. The turns ratio is important since it sets the LDOs’ supply voltage values. The voltage generated by the secondary winding (VSEC) together with the rectifier diode and output capacitor is calculated as follows: Inductor Value There are several parameters that must be examined when determining which inductor to use: input voltage, output voltage, load current, switching frequency, and LIR. LIR is the ratio of peak-to-peak inductor ripple current to the maximum DC load current. A higher LIR 18 - VOUT1) × VOUT1 VSEC = (VOUT1 + VQ2 ) × nn2 - VD2 1 where VQ2 and VD2 are the voltage drops across the low-side MOSFET on the primary side and the rectifier ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset It is important to have the secondary winding tightly coupled with the primary winding to minimize leakage inductance for higher efficiency. The positive voltage generated by the secondary winding can also be stacked with the main DC-DC step-down converter output to further improve efficiency and reduce winding cost. In this case, the secondary-side voltage is: VSEC = (VOUT1 + VQ2 ) × nn2 1 + VOUT1 - VD2 Input Capacitor The input-filter capacitor reduces peak currents drawn from the power source and reduces noise and voltage ripple on the input caused by the AC-RMS current through the ESR of the input capacitor (C2 in the Typical Applications Circuits). The input capacitor must meet the ripple-current requirement (IIN_RMS) imposed by the switching currents defined by the following equation: IIN _ RMS = IOUT1 × VOUT1 × (VIN - VOUT1) VIN IIN_RMS has a maximum value when the input voltage equals twice the output voltage (VIN = 2 × VOUT1), so IIN_RMS(MAX) = IOUT1 / 2. Ceramic capacitors are recommended due to their low ESR and ESL at high frequency, with relatively low cost. Choose a capacitor that exhibits less than 10°C temperature rise at the maximum operating RMS current for optimum long-term reliability. For applications that require input power-fail warning, such as dying gasp, add a large-value electrolytic capacitor (CS) to the input as a local energy storage device to provide the power to the converter in case of input power-fail. The capacitor value must be high enough to meet the desired power-fail warning time, tWARN, where tWARN is the time from when PFI trips the PFO output to when the main output (OUT1) starts dropping out of regulation. The value of the storage capacitor, CS, can be calculated as: 1 P 1 CS = 0.5 × OUT1 × η VDROOP VPFI × t WARN (VPFI - VDROOP ) where POUT1 is the total output power, η is the total converter efficiency, VPFI is the input voltage value at the input power-fail (PFI) trip threshold, and VDROOP is the input voltage value where VOUT1 starts dropping out of regulation. VPFI and VDROOP can be calculated as: R10 VPFI = 1.22V × 1 + R11 where R10 and R11 are the resistive-dividers from IN to PFI to GND in the Typical Applications Circuits. VDROOP = VOUT1 DMAX where DMAX is the maximum duty cycle. To ensure for worst-case component tolerances such as capacitance of CS, converter efficiency, VPFI, and VDROOP’s threshold over the operating temperature range, it is recommended to select CS at least 1.5 times the calculated value above. Output Capacitor The key selection parameters for the output capacitor are the actual capacitance value, the equivalent series resistance (ESR), the equivalent series inductance (ESL), and the voltage-rating requirements. All of these affect the overall stability, output ripple voltage, and transient response. The output ripple is composed of three components: variations in the charge stored in the output capacitor, the voltage drop across the capacitor’s equivalent series resistance (ESR), and equivalent series inductance (ESL) caused by the current into and out of the capacitor. ______________________________________________________________________________________ 19 MAX8513/MAX8514 diode on the secondary side (Q2 and D2 in the Typical Applications Circuits). n2 and n1 are the number of turns of the secondary winding and the primary winding, respectively. MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset The peak-to-peak output voltage ripple as a consequence of the ESR, ESL, and output capacitance is: VRIPPLE(ESR) = IP-P × RESR IP-P VRIPPLE(C) = 8 × COUT × fS where COUT is C4 in the Typical Applications Circuits. VIN × ESL L1A + ESL V -V V and IP-P = IN OUT1 OUT1 f L V IN S VRIPPLE(ESL) = where IP-P is the peak-to-peak inductor current (see the Inductor Selection section). An approximation of the overall voltage ripple at the output is: VRIPPLE = VRIPPLE(C) + VRIPPLE(ESR) + VRIPPLE(ESL) While these equations are suitable for initial capacitor selection to meet the ripple requirement, final values may also depend on the relationship between the LC doublepole frequency and the capacitor ESR zero. Generally, the ESR zero is higher than the LC double pole (see the Compensation Design section). Solid polymer electrolytic or ceramic capacitors are recommended due to their low ESR and ESL at higher frequencies. Higher output current may require paralleling multiple capacitors to meet the output voltage ripple. The MAX8513/MAX8514s’ response to a load transient depends on the selected output capacitor. After a load transient, the output instantly changes by (ESR × ∆IOUT1) + (ESL × dIOUT1 / dt). Before the controller can respond, the output deviates further depending on the inductor and output capacitor values. After a short period of time (see the Typical Operating Characteristics), the controller responds by regulating the output voltage back to its nominal state. The controller response time depends on the closed-loop bandwidth. With a higher bandwidth the response time is faster, preventing the output capacitor from further deviation from its regulating value. Be sure not to exceed the capacitor’s voltage or current ratings. MOSFET Selection The MAX8513/MAX8514 drive two external, logic-level, N-channel MOSFETs as the circuit switch elements. The key selection parameters are: • For on-resistance (RDS_ON), the lower the better. 20 • Maximum drain-to-source voltage (VDS) should be at least 20% higher than the input supply rail at the high-side MOSFET’s drain. • For gate charges (QGS, QGD, QDS), the lower the better. Choose the MOSFETs with rated R DS_ON at V GS = 4.5V. For a good compromise between efficiency and cost, choose the high-side MOSFET (Q1 in the Typical Applications Circuits) that has conduction loss equal to switching loss at nominal input voltage and maximum output current. For the low-side MOSFET (Q2 in the Typical Applications Circuits), make sure that it does not spuriously turn on due to dV/dt caused by Q1 turning on as this results in shoot-through current degrading the efficiency. MOSFETs with a lower QGD / QGS ratio have higher immunity to dV/dt. For proper thermal management, the power dissipation must be calculated at the desired maximum operating junction temperature, maximum output current, and worst-case input voltage. For Q2, the worst case is at V IN_MAX . For Q1, it could be either at V IN_MIN or VIN_MAX. Q1 and Q2 have different loss components due to the circuit operation. Q2 operates as a zero voltage switch, where major losses are the channel conduction loss (PQ2CC) and the body-diode conduction loss (PQ2DC). V PQ2CC = 1 - OUT1 × IOUT12 × RDS _ ON V IN PQ2DC = 2 × IOUT1 × VF × t dt × fS where VF is the body-diode forward voltage drop, tdt = 50ns is the dead time between Q1 and Q2 switching transitions, and fS is the switching frequency. The total losses for Q2 are: PQ2 _ TOTAL = PQ2CC + PQ2DC Q1 operates as a duty-cycle control switch and has the following major losses: the channel conduction loss (PQ1CC), the V I overlapping switching loss (PQ1SW), and the drive loss (PQ1DR). Q1 does not have bodydiode conduction loss because the diode never conducts current. PQ1CC = VOUT1 × IOUT12 × RDS _ ON VIN where RDS_ON is at the maximum operating junction temperature. ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset + QGD ) IGATE where IGATE is the average DH high driver output-current capability determined by: IGATE = 2.5V R ( DH + RGATE ) LPAR = where RDH is the high-side MOSFET driver’s on-resistance (1.5Ω typ) and RGATE is the internal gate resistance of the MOSFET (≈2Ω). PQ1DR = QGS × VGS × fS × RGATE RDH (RGATE + 1) Connect a scope probe to measure VLX to GND, and observe the ringing frequency, fR . 2) Find the capacitor value (connected from LX to GND) that reduces the ringing frequency by half. The circuit parasitic capacitance (CPAR) at LX is then equal to 1/3rd the value of the added capacitance above. The circuit parasitic inductance (LPAR) is calculated by: ) where VGS ≈ VVL = 5V. 1 (2π × fR ) 2 × CPAR The resistor for critical dampening (RSNUB) is equal to (2π × fR × LPAR). Adjust the resistor value up or down to tailor the desired damping and the peak voltage excursion. The capacitor (CSNUB) should be at least 2 to 4 times the value of the CPAR to be effective. The power loss of the snubber circuit is dissipated in the resistor (PRSNUB) and can be calculated as: The total power loss in Q1 is: PQ1 = PQ1CC + PQ1SW + PQ1DR In addition to the losses above, allow approximately 20% more for additional losses due to MOSFET output capacitances and Q2 body-diode reverse recovery charge dissipated in Q1. This is not typically welldefined in MOSFET data sheets. Refer to the MOSFET data sheet for the thermal-resistance specification to calculate the PC board area needed to maintain the desired maximum operating junction temperature with the above calculated power dissipations. To reduce EMI caused by switching noise, add a 0.1µF or larger ceramic capacitor from the high-side MOSFET drain to the low-side MOSFET source or add resistors in series with DH and DL to slow down the switching transitions. However, adding series resistors with DH and DL increases the power dissipation in the MOSFET when it switches, so be sure this does not overheat the MOSFET. The minimum load current must exceed the high-side MOSFET’s maximum leakage current over temperature if fault conditions are expected. MOSFET Snubber Circuit Fast switching transitions cause ringing because of resonating circuit parasitic inductance and capacitance at the switching nodes. This high-frequency ringing occurs at LX’s rising and falling transitions and can interfere with circuit performance and generate EMI. To dampen this ringing, a series-RC snubber circuit is added across each switch. The following is the procedure for selecting the value of the series-RC circuit: PRSNUB = CSNUB × (VIN ) 2 × fS where VIN is the input voltage and fS is the switching frequency. Choose an RSNUB power rating that meets the specific application’s derating rule for the power dissipation calculated. Current-Limit Setting The MAX8513/MAX8514 can provide foldback current limit or constant current limit. Unless constant currentlimit operation is required, such as when driving a constant current load, foldback current limit should be implemented. Foldback current limit reduces the power dissipation of external components under overload or short-circuit conditions. Foldback Current Limit For foldback current limit, the current-limit threshold is set by an external resistive-divider from VOUT1 to ILIM to GND (R17 and R18 of the Typical Applications Circuits). This makes the voltage at ILIM a function of the internal 5µA current source and VOUT1. The current-limit comparator threshold is equal to VILIM / 7.5. This threshold is compared with VSENSE. VSENSE is either the voltage across the current-sense resistor or, for lossless sensing, the voltage across the inductor. When V SENSE exceeds the current-limit threshold, the high-side MOSFET turns off and the low-side MOSFET turns on. This allows for a current foldback feature that reduces the current-limit threshold during a short circuit. This makes the current threshold limit, when VOUT = 0V, a percentage of the current-limit threshold, when VOUT1 is at its nominal regulated value. ______________________________________________________________________________________ 21 MAX8513/MAX8514 PQ1SW = VIN × IOUT1 × fS × (QGS MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset To set the current limit and the current-limit foldback thresholds, first select the foldback current-limit ratio (PFB). This ratio is the foldback current limit (ILIMIT@0V) divided by the current limit when VOUT1 equals its nominal regulated voltage (ILIMIT). I PFB = LIMIT @0V ILIMIT PFB is typically set to 0.5. To calculate the values of R17 and R18 (in the Typical Applications Circuits), use the following equations: R17 = R18 = (PFB × VOUT1 ) 4.7µA × (1- PFB ) (7.5 × RCS _ MAX × ILIMIT × (1- PFB )) × R17 VOUT1 - (7.5 × RCS _ MAX × ILIMIT × (1- PFB )) RCS_MAX is the maximum sensing resistance at the high operating temperature. R CS can either be the series resistance of the inductor or a discrete currentsense resistor value. ILIMIT is the peak inductor current at maximum load, which equals: 1 + LIR IOUT1_ MAX × 2 If R18 results in a negative resistance, then decrease RCS. This can be done by choosing an inductor with a lower DC resistance or a lower value discrete currentsense resistor. Constant Current Limit For constant current-limit operation, connect ILIM to VL for a default current-limit threshold of 170mV (typ). The sensing resistor value must then be chosen so that: RCS_MAX × ILIMIT < 151mV the minimum value of the default threshold. Alternately, the constant current-limit threshold can also be set by using only R18, in which case R18 is calculated as follows: C14 of the Typical Applications Circuits). Pick the value of the filter capacitor, C14, from 0.22µF to 1µF (ceramic X7R). Then calculate the value of R19 as follows: R19 = ( ) RL_DC is the nominal value of the inductor’s DC resistance. Additionally, R20 (in the Typical Applications Circuits) is added in series with the CSN input to cancel the drop due to input bias current into CSP that develops across R19. R20 should be set equal to R19. Compensation Design The MAX8513/MAX8514 use a voltage-mode control scheme that regulates the output voltage by comparing the error-amplifier output (COMP) with a fixed internal ramp to produce the required duty cycle. The output lowpass LC filter creates a double pole at the resonant frequency, which has a gain drop of -40dB/decade and a phase shift of approximately -180°/decade. The error amplifier must compensate for this gain drop and phase shift to achieve a stable high-bandwidth closedloop system. The basic regulator loop consists of a power modulator, an output feedback divider, and an error amplifier. The power modulator has a DC gain set by VIN / VRAMP (VRAMP = 1VP-P), with a double pole and a single zero set by the output inductance (L), the output capacitance (COUT) (C4 in the Typical Applications Circuits), and its equivalent series resistance (RESR). VRAMP is the peak of the saw-toothed waveform at the input of the PWM comparator (see the Functional Diagrams in Figures 1 and 2). Below are equations that define the power modulator: GMOD(DC) = fPMOD = VIN VRAMP 1 2π L × COUT where L is L1A and COUT is C4 in the Typical Applications Circuits. fZESR = I R18 = 7.5 × RCS _ MAX × LIMIT 4.7µA L1A 2 × RL _ DC × C14 1 2π × COUT × RESR When using the DC resistance of the inductor as a current-sense resistor, an RC filter is needed (R19 and 22 ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset COUT = n × CEACH and RESR _ EACH RESR = n the -40dB/decade slope of the LC double pole, and the resultant compensated loop crosses over at the desired -20dB/decade slope. The error amplifier has a dominant pole at very low frequency (≈0Hz), and two separate zeros at: fZ1 = Thus the resulting fZESR is the same as that of each capacitor. The crossover frequency (fC), which is the frequency when the closed-loop gain is equal to unity, should be the smaller of 1/5th the switching frequency or 100kHz (see the Switching-Frequency Setting section): f fC ≤ S or 100kHz 5 The loop-gain equation at the crossover frequency is: GEA(fc)GMOD(fc) = 1 1 1 and fZ2 = 2π × R3 × C5 2π × (R1+ R4) × C11 and poles at: 1 and fP3 = 2π × R4 × C11 fP2 = The error-amplifier equivalent circuit and its gain vs. frequency plot are shown below in Figure 3. In this case, fZ2 and fP1 are selected to have the converters’ closed-loop crossover frequency, fC, occur when the error-amplifier gain has a +20dB/decade slope between fZ2 and fP2. The error-amplifier gain at fC is: where G EA(fc) is the error-amplifier gain at f C , and GMOD(fc) is the power modular gain at fC. The loop compensation is affected by the choice of output-filter capacitor used, due to the position of its ESR zero frequency with respect to the desired closed-loop crossover frequency. Ceramic capacitors are used for higher switching frequencies (above 750kHz) because of low capacitance and low ESR; therefore, the ESR zero frequency is higher than the closed-loop crossover frequency. While electrolytic capacitors (e.g., tantalum, solid polymer, oscon, etc.) are needed for lower switching frequencies, because of high capacitance and ESR, the ESR zero frequency is typically lower than the closed-loop crossover frequency. Thus the compensation design procedure is separated into two cases: GEA(fc) = 1 GMOD(fc) The gain of the error amplifier between fZ1 and fZ2 is: f fZ2 GEA(fZ1-fZ2) = GEA(fc) Z2 = fC fCGMOD(fc) C12 C11 R4 R3 VOUT1 R1 Case 1: Ceramic Output Capacitor (operating at high switching frequencies, fZESR > fC) GAIN (dB) C5 EA R2 The modulator gain at fC is: f GMOD(fc) = GMOD(DC) PMOD fC 1 C5 × C12 2π × R3 × C5 + C12 COMP REF CLOSED-LOOP GAIN EA GAIN 2 Since the crossover frequency is lower than the output capacitors’ ESR zero frequency and higher than the LC double-pole frequency, the error-amplifier gain must have a +20dB/decade slope at fC. This +20dB/decade slope of the error amplifier at crossover then adds to fZ1 fZ2 fP2 fP3 FREQUENCY fC Figure 3. Case 1: Error-Amplifier Compensation Circuit (ClosedLoop and Error-Amplifier Gain Plot) ______________________________________________________________________________________ 23 MAX8513/MAX8514 When the output capacitance is comprised of paralleling n number of identical capacitors whose values are CEACH with ESR of RESR_EACH, then: MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset This gain is also set by the ratio of R3/R1 where R1 is calculated in the OUT1 Voltage Setting section. Thus: R3 = R1 × fZ2 fC × GMOD(fc) Due to the underdamped (Q > 1) nature of the output LC double pole, the error-amplifier zero frequencies must be set less than the LC double-pole frequency to provide adequate phase boost. Set the error-amplifier first zero, fZ1, at 1/4th the LC double-pole frequency and the second zero, fZ2, at the LC double-pole frequency. Hence: C5 = 2 π × R3 × fPMOD Set the error-amplifier fP2 at fZESR, and fP3 to 1/2 the switching frequency, if fZESR < 1/2 fS. If fZESR > 1/2 fS, then set fP2 at 1/2 fS and fP3 at fZESR. The gain of the error amplifier between fP2 and fP3 is set by the ratio of R3/RI and is equal to: R3 f = GEA(fZ1-fZ2) P2 RI fPMOD where RI is the parallel combination of R1 and R4 and is equal to: R1 × R4 RI = R1 + R4 Below is a numerical example to calculate the erroramplifier compensation values used in the Typical Applications Circuit of Figure 5: VIN = 12V (nomimal input voltage) VRAMP = 1V VOUT1 = 3.3V VFB1 = 1.25V L1A = 1.8µH C4 = 47µF/ 6.3V ceramic, with RESR = 0.008Ω fS = 1.4MHz The LC double-pole frequency is calculated as: fPMOD = 1 2π L1A × C4 1 2π 1.8 × 10-6 × 47 × 10-6 fZESR = = = 17.3kHz 1 = 2π × RESR × C4 1 = 423kHz 2π × 0.008 × 47 × 10-6 Pick R2 = 8.06kΩ. 3.3V R1 = 8.06kΩ × - 1 = 13.3kΩ 1.25V The modulator gain at DC is: Therefore: R3 × fPMOD RI = and fP2 × GEA(fZ1-fZ2) R1 × RI R4 = R1 - RI C11 can then be calculated as: 1 C11 = 2π × R4 × fP2 GMOD(DC) = VIN VRAMP = 12 Pick fC = 100kHz. 2 17.4kHz GMOD(fc) = 12 × = 0.363 100kHz GEA(fZ1−fZ2) = fPMOD fCGMOD(fC) 17.4kHz = 0.479 100kHz × 0.363 R3 = R1 × GEA(fZ1−fZ2) = and C12 as: C12 = 24 C5 × × R3 × fP3 -1) π 2 C 5 ( = 13.3kΩ × 0.479 = 6.37kΩ ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset MAX8513/MAX8514 Use 6.8kΩ. C12 2 2 C5 = = = 5.38nF π × R3 × fPMOD π × 6.8kΩ × 17.4kHz C11 R4 R1 EA R2 R3 × fPMOD 6.8kΩ × 17.4kHz RI = = = 583Ω fP2 × GEA(fZ1-fZ2) 423kHz × 0.479 R1 × RI 13.3kΩ × 583Ω R4 = = = 609Ω R1 - RI 13.3kΩ - 583Ω C5 R3 VOUT1 Use 4.7nF. GAIN (dB) VCOMP VREF CLOSED-LOOP GAIN Use 620Ω. C11 = EA GAIN 1 1 = = 607pF 2π × R4 × fP2 2π × 620Ω × 423kHz Use 680pF. Pick fP3 = 700kHz, which is the midpoint between fZESR and 1/2 the switching frequency. C5 (2π × C5 × R3 × fP3 ) -1 4.7nF = = 33.7pF (2π × 4.7nF × 6.8kΩ × 700kHz) -1 fZ1 fZ2 fP2 fC fP3 FREQUENCY Figure 4. Case 2: Error-Amplifier Compensation Circuit (ClosedLoop and Error-Amplifier Gain Plot) C12 = Use 33pF. Case 2: Electrolytic Output Capacitor (operating at lower switching frequencies, fZESR < fC ) The modulator gain at fC is: 2 f GMOD(fc) = GMOD(DC) PMOD fZESRfC The output capacitor’s ESR zero frequency is higher than the LC double-pole frequency but lower than the closed-loop crossover frequency. Here the modulator already has a -20dB/decade slope; therefore, the erroramplifier gain must have a 0dB/decade slope at fC, so the loop crosses over at the desired -20dB/decade slope. The error-amplifier circuit configuration is the same as Case 1; however, the closed-loop crossover frequency is now between fP2 and fP3, as illustrated in Figure 4. The equations that define the error amplifier’s poles and zeroes (fZ1, fZ2, fP2, and fP3) are the same as for Case 1. However, fP2 is now lower than the closed-loop crossover frequency. The error-amplifier gain at fC is: GEA(fc) = 1 GMOD(fc) And the gain of the error amplifier between fZ1 and fZ2 is: f fZ2 GEA(fZ1−fZ2) = GEA(fc) Z2 = fP2 fP2GMOD(fc) Due to the underdamped (Q > 1) nature of the output LC double pole, the error-amplifier zero frequencies must be set less than the LC double-pole frequency to provide adequate phase boost. Set the first zero of the error amplifier, fZ1, at 1/4th the LC double-pole frequency. Set the second zero, fZ2, at the LC double-pole frequency. Set the second pole, fP2, at fZESR. ______________________________________________________________________________________ 25 MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset This gain between fZ1 and fZ2 is also set by the ratio of R3/R1, where R1 is selected in the OUT1 Voltage Setting section. Therefore: R3 = R1 × fPMOD fZESR × GMOD(fc) And similar to Case 1, C5 can be calculated as: C5 = fPMOD = = fZESR = 2 π × R3 × fPMOD = 1 2π L1A × C4 1 2π 6.2µH × 560µF = 2.7kHz 1 2πRESR × C4 1 = 18.95kHz 2π × 0.015Ω × 560µF Pick R2 = 8.06kΩ. Then: Set the error-amplifier third pole, fP3, at approximately 1/2 the switching frequency. The gain of the error amplifier at fC (between fP2 and fP3) is set by the ratio of R3/RI and is also equal to: GEA(fc) = 1 GMOD(fc) where RI is: 3.3V - 1 = 13.3kΩ 1.25V VIN = 12 GMOD(DC) = VRAMP R1 = 8.06kΩ × Pick fC = 50kHz, which is less than fS / 5. 2.7kHz2 = 0.0923 18.95kHz × 50kHz fPMOD GEA(fZ1−fZ2) = fZESRGMOD(fc) GMOD(DC) = 12 × RI = R1 × R4 R1 + R4 Therefore: 2.7kHz = 1.543 18.95kHz × 0.0923 R3 = R1 × GEA(fZ1-fZ2) = 13.3kΩ × 1.543 = 20.48kΩ = RI = R3 × GMOD(fc) × GD Similar to Case 1, R4, C11, and C12 can be calculated as: R1 × RI R1 - RI 1 C11 = 2π × R4 × fZESR C5 C12 = 2π × C5 × R3 × fP3 - 1 R4 = Below is a numerical example to calculate the erroramplifier compensation values for Case 2: VIN = 12V (nomimal input voltage) VRAMP = 1V VOUT1 = 3.3V VFB1 = 1.25V L1A = 6.2µH C4 = 560µF/ 10V OS-Con capacitor, with ESR = 0.015Ω Use 20kΩ. 2 2 = = 11.8nF π × R3 × fPMOD π × 20kΩ × 2.7kHz C5 = Use 12nF. RI = R3 × GMOD(fc) = 20kΩ × 0.0923 = 1.846kΩ R4 = R1× RI 13.3kΩ × 1.846kΩ = = 2.14kΩ R1- RI 13.3kΩ - 1.846kΩ Use 2.2kΩ. C11 = 1 1 = = 3.82nF 2π × R4 × fZESR 2π × 2.2kΩ × 18.95kHz Use 3.9nF. Pick fP3 = fS / 2 = 150kHz. fS = 300kHz 26 ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset Use 47pF. Linear-Regulator Controllers OUT2 Voltage Selection The MAX8513/MAX8514 OUT2 positive linear regulator’s output voltage is set by connecting a resistivedivider from OUT2 to FB2 to GND. The resistors in the divider are selected to set the minimum output current (IOUT2_MIN). For the Typical Applications Circuit (Figure 5 or Figure 6), the feedback resistors are set to R5 = 340Ω and R6 = 160Ω, where R5 is the resistor from OUT2 to FB2 and R6 is the resistor from FB2 to GND. These values set the minimum output current to ≈4.5mA, which works well with many MOSFETS. In general, IOUT2 _ MIN = IOUT2 _ MAX the feedback resistors (R5 and R6) set the output-voltage reference point as well as the minimum load. The loop gain for the positive LDO output using an NMOS transistor is: 0.8V × VOUT2 GC2 (1 + sCA × RA ) sCOUT2 s(CA + Cq)1+ (1+ sRA × Cq) gC where COUT2 is C6 in the Typical Applications Circuits. GC2 is the transconductance of the internal amplifier (0.21S typ), and a dominant pole at a low frequency is created from this transconductance and the compensation capacitor (CA in the Typical Applications Circuits + Q3’s gate capacitance (Cq)). A second pole occurs due to COUT2 and the transconductance of Q3 (gC). This transconductance varies from a minimum gC(MIN) occurring at minimum load to a maximum g C(MAX) occurring at maximum load. To calculate the gC at any load current, the typical forward transconductance can be extracted from the MOSFET’s data sheet (gfs), as well as the current at which it is measured (IDfs). The gC(MIN) and gC(MAX) can be calculated as: 333 gC(MAX) = gfs Select R5 and R6 so: 0.8V = IOUT2 _ MIN R6 gC(MIN) = gfs IOUT2(MAX) IDfs IOUT2(MIN) IDfs Poles occur at: V R5 = R6 × OUT2 - 1 0.8V OUT2 Stability A transconductance amplifier drives the gate of the NMOS transistor (Q3 in the Typical Applications Circuits), with current proportional to the error signal multiplied by the amplifier’s transconductance. The error signal is the difference between VFB2 and the internal 0.8V reference. VSUP2, the supply voltage for the transconductance amplifier, must be at least 1V greater than the maximum required gate voltage (VDRV2). The output pass transistor (Q3) buffers the DRV2 signal to produce the desired output voltage (V OUT2 ). The output capacitor (C6 in the Typical Applications Circuits) helps bypass the output, while fPMAX = gC(MAX) 2π × COUT2 gC(MIN) and fPMIN = 2π × COUT2 If only a minimum gfs is given, initially assume the maximum is twice the minimum. When using a bipolar transistor, the g C(MAX) and gC(MIN) occur at the following: I gC(MIN) = OUT2MIN VT IOUT2MAX gC(MAX) = VT where VT is the thermal voltage, 26mV. ______________________________________________________________________________________ 27 MAX8513/MAX8514 C5 (2π × C5 × R3 × fP3 ) - 1 12nF = = 53.3pF 2π × 12nF × 20kΩ × 150kHz - 1 C12 = MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset A third pole occurs due to the input capacitance of the NMOS transistor’s gate, C q (C iss from the MOSFET data sheet), and the compensation resistor (RA). If an NPN bipolar transistor is used instead, this third pole can be calculated from the base capacitance (Cq = CIBO from the NPN data sheet). To ensure stability, a zero is added to the loop from the resistor (RA) and capacitor (CA). For good stability and transient response, first pick COUT2 at approximately 6.8µF/A of load current. For the Typical Applications Circuit, COUT2 is a 10µF ceramic capacitor. Ensure that the zero formed from the ESR of COUT2 is greater than the maximum bandwidth BWMAX (calculated below). The maximum bandwidth should also be less than the pole created by Q3’s gate capacitance (Cq) and the compensation resistor (RA). 1 1 1.3 × 2π × C R , G C BWMAX = MIN 1 1 × × R C π 2 ESR _ COUT2 OUT 10 The following equations set the compensation zero a decade and a half below the maximum load pole and ensure the above constraint is met. Choose the larger of the two values for CA. 8 × VOUT × COUT × Cq × GC2 × gC(MAX) × gC(MAX) × RESR _ COUT2 + 1 13 × , gC(MAX) VOUT2 + IOUT2(MAX) CA = MAX GC2 × gC(MAX) × 16 10 × gC(MAX) VOUT2 + IOUT2(MAX) R ESR _ COUT2 COUT − Cq ( ) ( ) V C RA = 10 10 × OUT2 OUT2 × CA (gC(MAX) × RESR _ COUT2 + 1) (gC(MAX)VOUT2 + IOUT2(MAX) ) MOSFET Transistor Selection MAX8513/MAX8514s’ OUT2 uses N-channel MOSFETs as the series pass transistor to improve efficiency for high output current by not requiring a large amount of 28 drive current. The selected MOSFET must have the gate threshold voltage meet the following criteria: VGS _ MAX ≤ VDRV 2 - VOUT2 where V DRV2 is equal to 7.75V or V SUP2 - 1.5V (whichever is less), and VGSMAX is the maximum gate voltage required to yield the on-resistance specified by the manufacturer’s data sheet. Logic-gate MOSFETs are recommended. NPN-Transistor Selection The MAX8513/MAX8514s’ OUT2 can use a less expensive NPN transistor as the series pass transistor. In selecting the appropriate NPN transistor, make sure the beta is large enough so the regulator can provide enough base current. The minimum beta of the transistor is: β(MIN) = IOUT2(MAX) 4mA In addition, to avoid premature dropout, V CE_SAT ≤ VIN_MIN - VOUT2. OUT3_ Transistor Selection The pass transistors must meet specifications for current gain (β), input capacitance, collector-emitter saturation voltage, and power dissipation. The transistor’s current gain limits the guaranteed maximum output current to: V IOUT3P = IDRV 3P _ MIN - - BE β R12 where IDRV3P_MIN is the minimum base-drive current and R12 is the pullup resistor connected between the transistor’s base and emitter (see the Typical Applications Circuits). In addition, to avoid premature dropout VCE_SAT ≤ VIN_MIN - VOUT3. Furthermore, the transistor’s current gain increases the linear regulator’s DC loop gain (see the Stability Requirements section), so excessive gain destabilizes the output. Therefore, transistors with current gain over 100 at the maximum output current, such as Darlington transistors, are not recommended. The transistor’s input capacitance and input resistance also create a second pole, which could be low enough to destabilize the LDO when the output is heavily loaded. The transistor’s saturation voltage at the maximum output current determines the minimum input-to-output voltage differential that the linear regulator supports. Alternately, ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset When the MAX8513/MAX8514 are disabled, R26 discharges C7. transistor’s specifications, the base-emitter resistor, and the output capacitor determine the loop stability. The total DC loop gain (AV) is the product of the gains of the internal transconductance amplifier, the gain from base to collector of the pass transistor (Q4 in the Typical Applications Circuits), and the gain of the feedback divider. The transconductance amplifier regulates the output voltage by controlling the pass transistor’s base current. Its DC gain is approximately: OUT3P Voltage Selection (PNP) The MAX8513 positive linear-regulator output voltage, VOUT3P, is set with a resistive-divider from OUT3P to FB3P to GND. First, select R14 resistance value (below 1kΩ). Then, solve for R13 so: GC3 _ × RIN || R12 where G C3_ is typically 0.6S (OUT3P) and 0.36S (OUT3N), RIN is the input resistance of Q4, and can be calculated by: V R13 = R14 OUT3P -1 0.8V where VOUT3P can range from +0.8V to +27V. OUT3N Voltage Selection (NPN) The MAX8514’s negative linear-regulator output voltage, VOUT3N, is a negative regulated voltage developed through the pass transistor Q4 (MAX8514 Typical Applications Circuits). A resistive-divider from OUT3N to FB3N to V REF3N forces V FB3N to regulate to 0V. Calculate VOUT3N by first selecting R14 the resistor from VREF3N to FB3N to be below 5kΩ, where VREF3N is any positive voltage (usually VOUT1). R13 is then calculated by: R13 = 26mV RIN = IOUT3 _ The DC gain for the transistor (Q4), including the feedback divider, is approximately: VREF for OUT3P or VT VOUT3N × VREF3N A Q4N = (VREF3N - VOUT3N ) × VT A Q4P = VT is the thermal voltage for the transistor (typically 26mV at TA = +27°C). The total DC loop gain for OUT3_ is: ( -VOUT3N × R14 VREF3N SUP3N is the supply input for OUT3N’s transconductance amplifier. When OUT3N is used, SUP3N must be connected to a voltage supply between 1.5V and 5.5V that can source at least 25mA. Typically, VOUT1 can be used as the supply input for SUP3N. Stability Requirements The MAX8513/MAX8514s’ DRV3P and DRV3N outputs are designed to drive bipolar transistors (PNP types for the MAX8513 with the DRV3P output, and NPN types for the MAX8514 with the DRV3N output). These bipolar transistors form linear regulators with positive outputs (MAX8513 from 0.8V to 27V) and negative outputs (MAX8514 from -18V to -1V). An internal transconductance amplifier is used to drive the external pass transistors. The transconductance amplifier, pass β ) A V = GC3 _ × RIN || R12 × A Q4 _ A dominant pole (fPOLE1) is created from the output capacitance and load resistance: fPOLE1 = IOUT3 _ MAX 1 = 2π × COUT3 × ROUT3 2π × COUT3 × VOUT3 _ Unity-gain crossover (fC_OUT3_) should occur at: fC _ OUT3 _ = A V × fPOLE1 A second pole is set by the input capacitance to the base of Q4 (C Q4IN ), any external base-to-emitter capacitance (CBE, see the Base-Drive Noise Reduction section and Figure 7), the transistor’s input resistance (RIN), and the base-to-emitter pullup resistor (R12): ______________________________________________________________________________________ 29 MAX8513/MAX8514 the package’s power dissipation could limit the useable maximum input-to-output voltage differential. The maximum power-dissipation capability of the transistor’s package and mounting must allow the actual power dissipation in the device without exceeding the maximum junction temperature. The power dissipated equals the maximum load current multiplied by the maximum input-to-output voltage differential. MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset fPOLE2 = 1 2π(CBE + CQ4IN ) × RIN || R12 If the second pole occurs well after unity-gain crossover, the linear regulator remains stable. If not, then increase the output capacitance COUT3 (C8 in the Typical Applications Circuits) so: fPOLE2 > 2 × fC _ OUT3 _ If high-ESR capacitors are used for the output capacitor (COUT3), then cancel the ESR zero with a pole at FB3_. This is accomplished by adding a capacitor (CFB3_) from FB3_ to GND so: CFB3 _ = 1 2π × R3 || R4 × fESR OUT3_ Output Capacitors Connect at least a 1µF capacitor between the linear regulator’s output and ground, as close to the MAX8513/ MAX8514 and the external pass transistors as possible. Depending on the selected pass transistor, larger capacitor values may be required for stability (see the Stability Requirements section). Once the minimum capacitor value for stability is determined, verify that the linear regulator’s output does not contain excessive noise. Although adequate for stability, small capacitor values can provide too much bandwidth, making the linear regulator sensitive to noise. Larger capacitor values reduce the bandwidth, thereby reducing the regulator’s noise sensitivity. For the negative linear regulator, if noise on the ground reference causes the design to be marginally stable, bypass the negative output back to its reference voltage (VREF3N, Figure 6). This technique reduces the differential noise on the output. Ensure the voltage rating of the capacitor exceeds the output voltage. Base-Drive Noise Reduction The high-impedance base driver is susceptible to system noise, especially when the linear regulator is lightly loaded. Capacitively coupled switching noise or inductively coupled EMI on the base drive causes fluctuations in the base current, which appear as noise on the linear regulator’s output. To avoid this, keep the base-drive traces away from the step-down converter and as short as possible to minimize noise coupling. Resistors in series with the gate drivers (DH and DL) reduce the LX switching noise generated by the step-down converter. Additionally, a bypass capacitor (CBE) can be placed across the base-to-emitter resistor (Figure 7). This bypass capacitor, in addition to the transistor’s input capaci30 tance, reduces the frequency of the second pole (fPOLE2) that could destabilize the linear regulator (see the Stability Requirements section). Therefore, the stability requirements determine the maximum base-to-emitter capacitance (CBE) that can be added. Transformer Selection In systems where the step-down controller’s output (OUT1) is not the highest voltage, a transformer can be used to provide additional post-regulated, high-voltage outputs. The transformer generates unregulated highvoltage supplies that power the positive and negative linear regulators. These unregulated supply voltages must be high enough to keep the pass transistors from saturating. For positive output voltages, connect the transformer as shown in the Typical Applications Circuits where the minimum turns ratio (n2/n1) is determined by: VOUT3 _ + VQ4(SAT) + VD2 n2 ≥ n1 VOUT1 where VQ4(SAT) is OUT3P’s pass transistor’s saturation voltage under full load. Since power transfer occurs when the low-side MOSFET is on (DL = high), the transformer cannot support heavy loads with high duty cycles on VOUT1. Minimum Load Requirements (Linear Regulators) Under no-load conditions, leakage currents from the pass transistors supply the output capacitor, even when the transistor is off. Generally, this is not a problem since the feedback resistors’ current drains the excess charge. However, charge can build up on the output capacitor over temperature, making VOUT2/3 rise above its set point. Care must be taken to ensure the feedback resistors’ current exceeds the pass transistor’s leakage current over the entire temperature range. Thermal Consideration The power dissipated by the series pass transistor is calculated by: PD = (| VIN - VOUT2 / 3 |) × IOUT2 / 3 where VIN is the input to the transistor of the LDO and the absolute value of the difference between VIN and VOUT2/3 is taken. VIN is derived from the transformer winding ratio. The transistor must be adequately heat sunk to prevent a thermal runaway condition. Refer to the transistor data sheet for thermal calculation. ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset C1 1µF R15 10Ω C10 2.2µF IN R10 68.1kΩ C2 10µF D1 100mA, 30V (CMOSH-3) PVL VL BST SUP2 PFI C20 30V, 5.5A DUAL N-CHANNEL 1000pF (FDS6984S) Q1 DH R11 12.4kΩ EN/SYNC C3 0.1µF R25 5.1Ω L1A LX C5 R3 6.8kΩ 4.7nF R19 200Ω Q2 FB1 C4 47µF R20 200Ω R1 13.3kΩ DL COMP1 C12 33pF C14 CSP 0.47µF PGND R7 10.7kΩ DRV2 R5 340Ω MAX8513 Q3 30V, 23A N-CHANNEL MOSFET (IRLR2703) FB2 GND C13 0.1µF RA 100Ω SEQ SS R6 160Ω CA 0.68µF R8 100kΩ R9 100kΩ PFO POR R12 1kΩ L1B R18 66.5kΩ ILIM DRV3P R13 11.3kΩ CSP VOUT2 2.5V, 1.5A PFO VOUT1 CSN C6 10µF POR R17 665kΩ VOUT1 3.3V, 2A R2 8.06kΩ IC1 REF C11 680pF R4 620Ω CSN FB1 FREQ C9 0.1µF COUPLED INDUCTOR L1A = 1.8µH, 4.5A/0.01Ω n2/n1 = 20:6 (COILTRONICS, CTX 03-16101) FB3P R14 806Ω R26 Q4 1.5kΩ 40V, 200mA PNP (MMBT3906) C7 1µF C8 1µF D2 CMPD4448 VOUT3P 12V, 50mA C22 1000pF CSN CSP Figure 5. MAX8513 Typical Applications Circuit ______________________________________________________________________________________ 31 MAX8513/MAX8514 VIN MAX8513/MAX8514 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset VIN 9V to 16V C1 1µF R15 10Ω C10 2.2µF IN R10 68.1kΩ C2 10µF D1 100mA, 30V (CMOSH-3) PVL VL BST SUP2 PFI EN/SYNC C3 0.1µF R25 5.1Ω R19 200Ω Q2 C12 33pF C14 CSP 0.47µF PGND R7 10.7kΩ R1 13.3kΩ CSN R2 8.06kΩ FB1 FREQ IC1 DRV2 R5 1.74kΩ MAX8514 REF Q3 30V, 23A N-CHANNEL MOSFET (IRLR2703) FB2 GND C13 0.1µF C4 47µF R20 200Ω DL COMP1 C9 0.1µF COUPLED INDUCTOR L1A = 1.8µH, 4.5A/0.01Ω L1A LX C5 R3 6.8kΩ 4.7nF FB1 30V, 5.5A DUAL N-CHANNEL C20 (FDS6984S) 1000pF Q1 DH R11 12.4kΩ RA 100Ω SEQ SS R17 665kΩ CA 0.68µF R6 806Ω PFO PFO POR VOUT1 R12 1kΩ L1B R18 66.5kΩ ILIM DRV3P R13 12.1kΩ R26 Q4 1.5kΩ 40V, 200mA NPN (MMBT3904) FB3P CSP C22 1000pF CSN R9 100kΩ VOUT2 2.5V, 1.5A POR SUP3N CSN R8 100kΩ C6 10µF C7 1µF C8 1µF R14 3.31kΩ D2 CMPD4448 VOUT3P 12V, 50mA VREF3N CSP Figure 6. MAX8514 Typical Applications Circuit 32 ______________________________________________________________________________________ C11 680pF R4 620Ω VOUT1 3.3V, 2A Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset MAX8513/MAX8514 VOUT1 L1B C7 MAX8513 CBE R12 DRV3P Q4 R13 VOUT3P FB3P C8 R14 a) POSITIVE OUTPUT VOLTAGE VOUT1 SUP3N R14 VOUT1 FB3N R13 VOUT3N C8 DRV3N Q4 C BE R12 L1B MAX8514 b) NEGATIVE OUTPUT VOLTAGE C7 Figure 7. Base-Drive Noise Reduction Applications Information PC Board Layout Guidelines Careful PC board layout is critical to achieve low switching losses and clean, stable operation. The switching power stage requires particular attention. Follow these guidelines for good PC board layout: Place decoupling capacitors as close to the IC pins as possible. Keep separate the power-ground plane (connect to the sources of the low-side MOSFET, PGND, and the output capacitor’s return). Connect the input decoupling capacitors across the drain of the high-side MOSFETs and the source of the low-side MOSFETs. The signal-ground plane (connected to GND) is connected to the rest of the circuit-ground return. The two ground planes then connect together with a single con- nection at the IC. Keep the high-current paths as short as possible. Connect the drains of the MOSFETS to a large copper area to help in cooling the devices, further improving efficiency and long-term reliability. 1) Ensure all feedback connections are short and direct. Place the feedback resistors as close to the IC as possible. 2) Route high-speed switching nodes away from sensitive analog areas (FB_, COMP, ILIM). 3) Ensure the current-sense paths for CSP and CSN run parallel and close together to cancel any noise pickup. 4) A reference PC board layout included in the MAX8513 evaluation kit is also provided to further aid layout. ______________________________________________________________________________________ 33 Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset MAX8513/MAX8514 Pin Configurations TOP VIEW PFI 1 28 SS PFI 1 28 SS PFO 2 27 CSN PFO 2 27 CSN DH 3 26 CSP DH 3 26 CSP LX 4 25 ILIM LX 4 25 ILIM BST 5 24 FB3P BST 5 DL 6 MAX8513 PVL 7 23 POR 22 IN PGND 8 21 DRV3P VL 9 20 N.C. COMP1 10 19 SYNC/EN DL 6 24 FB3N MAX8514 PVL 7 23 POR 22 IN PGND 8 21 DRV3N VL 9 20 SUP3N COMP1 10 19 SYNC/EN FB1 11 18 SEQ FB1 11 18 SEQ FREQ 12 17 SUP2 FREQ 12 17 SUP2 REF 13 16 DRV2 REF 13 16 DRV2 GND 14 15 FB2 GND 14 15 FB2 28 QSOP 28 QSOP Chip Information TRANSISTOR COUNT: 4824 PROCESS: BiCMOS 34 ______________________________________________________________________________________ Wide-Input, High-Frequency, Triple-Output Supplies with Voltage Monitor and Power-On Reset QSOP.EPS PACKAGE OUTLINE, QSOP .150", .025" LEAD PITCH 21-0055 E 1 1 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 35 © 2004 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products. MAX8513/MAX8514 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.)