ICs for MD System AN8771NFH Pre-amplifier IC for MD ■ Overview Unit: mm The AN8771NFH is an MD pre-amplifier IC of wide range of supply voltage (VCC = 2.7 V to 5.5 V). This IC can form an MD system using 3-beam pick-up in combination with the MN66614 digital signal processing LSI. 12.00±0.20 10.00±0.20 48 33 32 (1.25) 10.00±0.20 12.00±0.20 49 ■ Features 64 ■ Applications 1 16 0.50 +0.1 0.18–0.05 +0.10 0.10±0.10 (1.25) 17 0.15–0.05 1.95±0.20 • Applicable for 3-beam pick-up • RF signal processing • Error signal generating function for servo • Various status detection function • Laser power control circuit Seating plane • MD (1.00) 0° to 10° 0.50±0.20 QFP064-P-1010 Note) The package of this product will be changed to lead-free type (QFP064-P-1010A). See the new package dimensions section later of this datasheet. Publication date: February 2002 SDD00018CEB 1 AN8771NFH 33 34 35 36 VCC2 37 38 39 40 41 42 43 44 45 46 47 48 GND2 ■ Block Diagram 49 32 EQ DSL Mode control 31 50 51 RF amp. Pin 20 3TENV Pin 21 AGC 30 OFT amp. 52 28 IV ASOF set 54 VCA 27 IV 55 VREF Pin 18 VREF IV BPF 56 RFBDO VCA OFTR IV VREF 57 IV 58 GND1 29 NRF det. 53 IV IV FBAL /FOF set 59 ASBDO VCA 25 23 22 IV VREF 60 IV 61 26 24 VREF IV IV VCC3 VCC1 TBAL /TOFSET IV GND4 21 20 VCA 62 19 Mirror 63 circuit VREF 18 17 64 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 GND3 1 TRCRS ■ Pin Descriptions Pin No. Symbol 1 REFO 2 Description Pin No. Symbol APC reference voltage buffer 9 TE output pin 10 N.C. APC circuit GND pin 11 CCRS Description Tracking error signal output pin 2 GND3 3 APCREF APC reference voltage input pin 4 TEMPIN+ Temperature sensor amp. + input pin 12 TRCRS 5 TEMPIN− Temperature sensor amp. − input pin 13 FBAL Focus balance adjustment pin 6 TEMP Temperature sensor amp. output pin 14 FE Focus error signal output pin 7 TOFS Tracking offset adjustment pin 15 TGAIN TE amp. gain adjustment pin 8 TBAL Tracking balance adjustment pin 16 FOFS Focus offset adjustment pin Capacitor connection pin for track cross circuit SDD00018CEB Track cross output pin AN8771NFH ■ Pin Descriptions (continued) Pin No. Symbol 17 AS 18 ASOFS 19 ASGAIN Description Pin No. Symbol Description Main beam light quantity sum 38 PEFMS Data slice output pin signal output pin 39 GND2 Data slice circuit GND pin AS offset adjustment pin 40 PEFM Data slice level setting pin Amp. gain adjustment pin for 41 EFMIND Data slice signal input pin main beam system 42 EFMINS EFM detection input pin 20 MON3T 3T envelope detection output pin 43 OUTRF EFM output pin 21 CEA Capacitor connection pin for 3T 44 CRFAGC RFAGC capacitor connection pin envelope detection 45 EQADJ EQ setting pin 22 GND4 GND for FE/TE system 46 EQIN EQ input pin 23 BDO AS drop-out detection signal 47 ARFO RF amp. output pin output pin 48 SVREF Reference signal input pin BDO detection capacitor 49 VREF Reference signal output pin connection pin 50 RF1 RF1 signal input pin RF2 signal input pin 24 CBDOG 25 OFTR Off-track signal output pin 51 RF2 26 CBDOP RFBDO detection capacitor 52 SWMS connection pin 53 B Main beam B signal input pin Pit RF amp. polarity setting pin 27 OFTIN Off-track detection signal input pin 54 A Main beam A signal input pin 28 OFTO Off-track detection signal output pin 55 D Main beam D signal input pin 29 ADIP ADIP FM signal output pin 56 C Main beam C signal input pin 30 GND1 GND pin 57 F Side beam F signal input pin 31 NRFDET RF detection signal output pin 58 E Side beam E signal input pin 32 VCC1 VCC pin 59 VCC3 33 RFSWHL Reflection factor changeover 60 LDON signal input pin 34 35 RFSWPG NREC 37 Pit/group changeover signal 61 LDO input pin 62 APCPD+ LD amp. output pin Photo diode light quantity detection pin Recording/playback change over NRFSTBY Standby control signal input pin VCC2 LD amp. on/off control signal input pin signal input pin 36 APC circuit VCC pin 63 APCPD− PD polarity reversing current input pin 64 REFIN APC amp. reference voltage input pin Data slice circuit VCC pin SDD00018CEB 3 AN8771NFH ■ Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage VCC 6.0 V Supply current ICC 35 mA Power dissipation * PD 210 mW Operating ambient temperature * Topr −30 to +85 °C Storage temperature * Tstg −55 to +125 °C Note) 1. Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. 2. *: VCC1 , VCC2 , VCC3 are of same voltage. ■ Recommended Operating Range Parameter Supply voltage Symbol Range Unit VCC1 VCC2 VCC3 2.7 to 5.5 V ■ Electrical Characteristics at Ta = 25°C Parameter Conditions Min Typ Max Unit No load current consumption 1 ITOTAL1 Normal mode 19.6 24.5 29.4 mA No load current consumption 2 (Power saving mode) ITOTAL2 Power saving mode 1.0 1.7 2.5 mA VREF offset ∆VOVB V48 = V32 / 2 −7 0 7 mV VREF output impedance ZVB I49 = ±3 mA 5 Ω LD amp. off operation VLDOFF LD amp. off mode 0.4 V V62: 1 kHz sine wave (50 mV[p-p], DC offset voltage = VREF − 25 mV) 18 20 22 dB LD amp. gain GLD FE offset + adjustment ∆VOFO+ V16 = VREF − 0.5 V V19 = VREF − 0.5 V 100 mV FE offset − adjustment ∆VOFO− V16 = VREF + 0.5 V V19 = VREF − 0.5 V −100 mV FE gain 1 GFEA1 V54: 5 kHz sine wave (40 mV[p-p], DC offset voltage = VREF − 25 mV) V19 = VREF − 0.5 V 20 23 26 dB FE relative gain 2 GFEA2 V54: 5 kHz sine wave (300 mV[p-p], DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V −18 dB −6 −3 0 dB −12 −9.6 dB FE frequency characteristics A FBAL adjustment range 12 4 Symbol ∆GFEACA V54: 50 kHz sine wave (300 mV[p-p], DC offset voltage = VREF − 160 mV) V19 = VREF − 0.5 V ∆GFB12 V13 = VREF ± 0.5 V V19 = VREF + 0.5 V SDD00018CEB AN8771NFH ■ Electrical Characteristics at Ta = 25°C (continued) Parameter Symbol Conditions Min Typ Max Unit FBAL adjustment range 34 ∆GFB34 V13 = VREF ± 0.5 V V19 = VREF + 0.5 V 9.6 12 dB TE offset + adjustment ∆VOTO+ V7 = VREF − 0.5 V V15 = VREF − 0.5 V Pit mode 100 mV TE offset − adjustment ∆VOTO− V7 = VREF + 0.5 V V15 = VREF − 0.5 V Pit mode −100 mV TE gain 1 GTEE1 V58: 5 kHz sine wave (4 mV[p-p], DC offset voltage = VREF − 3 mV) V15 = VREF − 0.5 V, Pit mode 37.5 42.5 47.5 dB TE relative gain 2 GTEE2 V58: 5 kHz sine wave (40 mV[p-p], DC offset voltage = VREF − 25 mV) V15 = VREF + 0.5 V, Pit mode −18 dB ∆GTEACE V58: 100 kHz sine wave (40 mV[p-p], DC offset voltage = VREF − 25 mV) V15 = VREF + 0.5 V, Pit mode −6 −3 0 dB TE frequency characteristics E TBAL adjustment range 12 ∆GTB12 V8 = VREF ± 0.5 V V15 = VREF + 0.5 V, Pit mode −3 −2.3 dB TBAL adjustment range 34 ∆GTB34 V8 = VREF ± 0.5 V V15 = VREF + 0.5 V, Pit mode 2.3 3 dB AS offset + adjustment ∆VOASO+ V18 = VREF − 0.5 V V19 = VREF − 0.5 V 100 mV AS offset − adjustment ∆VOASO− V18 = VREF + 0.5 V V19 = VREF − 0.5 V −100 mV 13.6 15.6 dB AS gain 1 GAS1 V54: 5 kHz sine wave (50 mV[p-p], 10.6 DC offset voltage = VREF − 30 mV) V19 = VREF − 0.5 V AS relative gain 2 GAS2 V54: 5 kHz sine wave (300 mV[p-p], DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V −18 dB AS OFTO amp. relative gain ∆GASOF V54: 5 kHz sine wave (300 mV[p-p], DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V, Group mode 5.8 6.8 7.8 dB AS frequency characteristics ∆GASAC V54: 50 kHz sine wave (300 mV[p-p], DC offset voltage = VREF − 160 mV) V19 = VREF + 0.5 V −6 −3 0 dB GAD1 V54: 21.6 kHz sine wave (12 mV[p-p], DC offset voltage = VREF − 7 mV) V19 = VREF − 0.5 V 31 37 40 dB GADVCA2 V54: 21.6 kHz sine wave (150 mV[p-p], DC offset voltage = VREF − 80 mV) V19 = VREF + 0.5 V −18 dB ADIP gain 1 ADIP relative gain 2 SDD00018CEB 5 AN8771NFH ■ Electrical Characteristics at Ta = 25°C (continued) Parameter 6 Symbol Conditions Min Typ Max Unit ADIP frequency characteristics 1 ∆GADf1 V54: 18 kHz sine wave (150 mV[p-p], DC offset voltage = VREF − 80 mV) V19 = VREF + 0.5 V −3 0 dB ADIP frequency characteristics 2 ∆GADf2 V54: 26 kHz sine wave (150 mV[p-p], DC offset voltage = VREF − 80 mV) V19 = VREF + 0.5 V −3 0 dB RF amp. gain in group mode (playback) GRFG V54: 100 kHz sine wave (18 mV[p-p]) Group mode 18.8 20.8 22.8 dB RF amp. gain in low reflection factor (playback) GRFPL V54: 100 kHz sine wave (120 mV[p-p]) Pit low reflection factor mode 1.5 3.5 5.5 dB RF amp. gain in high reflection factor (playback) GRFPH V54: 100 kHz sine wave (300 mV[p-p]) Pit high reflection factor mode −8 −6 −4 dB RF amp. frequency characteristics in group mode (playback) ∆GRFG V54: 4 MHz sine wave (18 mV[p-p]) Group mode −3 dB RF amp. frequency characteristics in low reflection factor (playback) ∆GRFPL V54: 4 MHz sine wave (120 mV[p-p]) Pit low reflection factor mode −3 dB RF amp. frequency characteristics in high reflection factor (playback) ∆GRFPH V54: 4 MHz sine wave (300 mV[p-p]) Pit high reflection factor mode −3 dB EQ gain adjustment 1 ∆GEQ1 V54: 200 Hz, 720 kHz sine wave (100 mV[p-p]) V45 = GND, V44 = VREF − 0.2 V 1.5 3.0 dB EQ gain adjustment 2 ∆GEQ2 V54: 200 Hz, 720 kHz sine wave (100 mV[p-p]) V45 = 400 mV, V44 = VREF − 0.2 V 3.5 5.0 dB AGC operation VOMRFV V46: 500 kHz sine wave (200 mV[p-p]) 420 520 620 mV DSL pulse output duty TDSL V41: 720 kHz sine wave (500 mV[p-p]) 47 50 53 % NRF detection operation VRFD V46: 500 kHz sine wave (Amplitude sweep) 58 83 108 mV NRF detection high-level voltage VRFDH V46: 500 kHz sine wave (Amplitude sweep) 2.1 3.0 V NRF detection low-level voltage VRFDL V46 : 500 kHz sine wave (Amplitude sweep) 0 0.4 V TRCRS detection voltage 1 VH1TCR V7: Sweep + 0 to max. +150 mV in DC refering to V6 as reference 63 90 120 mV TRCRS detection voltage 2 VH2TCR V7: Sweep + 0 to max. −150 mV in DC refering to V6 as reference −120 −90 −63 mV TRCRS high-level voltage VTCRH V7 = V6 + 100 mV 2.1 3.0 V TRCRS low-level voltage VTCRL V7 = V6 − 100 mV 0 0.4 V ASBDO detection current 1 ICBDO1 Apply to the pin 24 DC voltage which is 200 mV higher than that at open 0.7 1.0 1.5 µA ASBDO detection current 2 ICBDO2 Apply to the pin 24 DC voltage which is 1.1 V higher than that at open 17 26 39 µA SDD00018CEB AN8771NFH ■ Electrical Characteristics at Ta = 25°C (continued) Parameter Symbol Conditions BDO high-level voltage VBDOH V17 < VREF + 50 mV BDO low-level voltage VBDOL V54: Apply voltage so as to get V17 = VREF + 200 mV Min Typ Max Unit 2.1 3.0 V 0 0.4 V RFBDO detection current 1 ICRFBDO1 V26: Apply voltage 100 mV higher than that of at open 0.33 0.50 0.75 µA RFBDO detection current 2 ICRFBDO2 V26 = VREF + 0.3 V 6.7 10 15 µA 15 30 60 µs 18.5 21.5 dB RFBDO detection operation V46: 500 kHz sine wave (200 mV[p-p] → 0 mV[p-p]) V26: Fix to DC voltage at which 200 mV[p-p] is inputted to V46 tRFB 3T component envelope extracting gain G3TMON V41: 720 kHz AM sine wave modulation 15.5 (500 mV[p-p]) AM sine wave: 5.3 kHz 20% OFTO EFM detection gain GEFMOF V41: 720 kHz AM sine wave modulation (500 mV[p-p]) AM modulation: 5.3 kHz 20% EFM detection output mode −6 −3 0 dB OFTIN detection level ∆VOFTI V27: Sweep VREF − 100 mV to VREF + 100 mV in DC 35 50 65 mV OFTR high-level voltage VOFTH V27 = VREF − 100 mV 2.1 3.0 V OFTR low-level voltage VOFTL V27 = VREF + 100 mV 0 0.4 V V5 = VREF ± 0.5 V −2 0 2 dB V3: 20 kHz sine wave (0.5 V[p-p]) −2 0 2 dB TEMP amp. gain GTM REFO gain GREFO ■ Technical Data 1. Operation mode set by mode setting <RF amp. gain> <IV amp.> Setting pin Operation mode NREC RFSWPG RFSWHL Pit high reflection factor mode Pit mode High-level High-level High-level Pit low reflection factor mode MO pit playback mode High-level High-level Low-level Group mode MO group playback mode High-level Low-level Low-level Operation off mode MO recording mode Low-level <OFTO output signal> Setting pin Operation mode RFSWPG EFM detection output mode High-level AS output mode Low-level SDD00018CEB 7 AN8771NFH ■ Technical Data (continued) 1. Operation mode set by mode setting (continued) <TE polarity changeover> Setting pin Operation mode RFSWPG Pit mode High-level Group mode Low-level <LD amp. operation> Setting pin Operation mode LDON Operation on mode High-level Operation off mode Low-level <Total operation> Setting pin Operation mode NREC Normal mode High-level Power saving mode Low-level 2. Voltage to be applied to setting pin Setting Pin name Lower limit Upper limit Condition VCC1 − 0.5 V VCC1 SVREF = VCC1 / 2 RFSWHL RFSWPG High-level NREC NRFSTBY LDON VCC3 − 0.5 V VCC3 RFSWHL SVREF = VCC1 / 2 RFSWPG Low-level NREC 0V 0.5 V NRFSTBY LDON 3. For SWMS (pin 52) setting In the pit high reflection factor mode and low reflection factor mode, the polarity of ARFO (pin 47) through RF1 (pin 50)·RF2 (pin 51) is shown below by setting of SWMS: 8 SWMS Polarity High-level Reverse Low-level Normal SDD00018CEB AN8771NFH ■ Technical Data (continued) 4. Internal circuit of APCPD− (pin 63) REFIN 64 APCPD+ 62 61 LDO VCC3 APCPD− 63 A current mirror circuit of which primary side is APCPD− is built-in. In case where output of secondary side is connected to APCPD+ and PD current for laser monitor is sunk to PD, the direction of current can be reversed by connecting the PD output to APCPD− . Mirror ratio is 1 to 1 as the hFE = ∞ When using no current mirror, connect APCPD− to VCC3 . ■ Application Circuit Example Microcomputer PD PD Head amp. Optical pick-up PD PD PD PD PD VCC3 PD 33 34 35 36 37 38 39 40 41 42 43 44 45 46 48 VREF 47 VCC2 PWM signal 49 32 50 31 51 30 52 29 53 28 54 27 55 26 56 25 57 24 58 23 59 22 60 21 61 20 62 19 63 18 64 17 VCC1 16 15 14 13 12 9 8 7 6 5 4 3 2 1 VREF 11 Laser diode 10 PD VREF Laser drive reference voltage Temperature sensor SDD00018CEB Survo-LSI 9 AN8771NFH ■ New Package Dimensions (Unit: mm) • QFP064-P-1010A (Lead-free package) 12.00±0.20 10.00±0.20 48 33 1 16 0.18±0.05 0.50 0.10 Seating plane 0.15±0.05 (1.00) 0° to 10° 0.50±0.20 10 SDD00018CEB 0.10 M 1.95±0.20 17 0.10±0.10 (1.25) 12.00±0.20 (1.25) 64 10.00±0.20 32 49 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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