MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 15 VOLTS Features • • • • • • Highly Stable Oxide Passivated Junction Guardring for Overvoltage Protection Low Forward Voltage Drop Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating. Full Electrical Isolation without Additional Hardware Pb−Free Package is Available* 1 2 3 Mechanical Characteristics • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 2 TO−247 CASE 340L STYLE 2 3 MARKING DIAGRAM MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 15 V Average Rectified Forward Current (At Rated VR, TC = 120°C) Per Leg Per Package IO Peak Repetitive Forward Current, (At Rated VR, Square Wave, 20 kHz, TC = 95°C) Per Leg IFRM 40 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Package IFSM 120 A Storage/Operating Case Temperature Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Voltage Rate of Change, (Rated VR, TJ = 25°C) A 20 40 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 9 MBR4015LWT AYWWG 1 MBR4015LWT A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR4015LWT TO−247 30 Units / Rail TO−247 (Pb−Free) 30 Units / Rail MBR4015LWTG Publication Order Number: MBR4015LWT/D MBR4015LWT THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Case Junction−to−Ambient Per Leg Per Leg Symbol Value Unit RqJC RqJA 0.57 55 °C/W Value Unit ELECTRICAL CHARACTERISTICS Rating Symbol VF Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 Per Leg TJ = 25°C TJ = 100°C 0.42 0.50 0.36 0.48 TJ = 25°C TJ = 100°C 5.0 2.7 530 370 (IF = 20 A) (IF = 40 A) IR Maximum Instantaneous Reverse Current (Note 2), See Figure 4 Per Leg (VR = 15 V) (VR = 7.5 V) V mA 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. 1000 100 TJ = 100°C 10 TJ = 25°C 1.0 TJ = -40°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1000 100 TJ = 100°C 10 TJ = 25°C 1.0 0.1 0 0.6 0.8 1.0 1.2 Figure 2. Maximum Forward Voltage Per Leg I R, MAXIMUM REVERSE CURRENT (AMPS) 10E+0 I R, REVERSE CURRENT (AMPS) 0.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Per Leg 1.0E+0 100E-3 0.2 10E+0 1.0E+0 TJ = 100°C 100E-3 TJ = 100°C 10E-3 1.0E-3 TJ = 25°C 10E-3 TJ = 25°C 1.0E-3 100E-6 100E-6 0 5.0 10 15 0 5.0 10 VR, REVERSE VOLTAGE (V) V VRR,, REVERSE REVERSE VOLTAGE VOLTAGE (VOLTS) (V) Figure 3. Typical Reverse Current Per Leg Figure 4. Maximum Reverse Current Per Leg http://onsemi.com 2 15 MBR4015LWT PFO , AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (A) 40 DC 30 SQUAREWAVE 20 10 0 20 40 60 80 100 120 140 dc Ipk/Io = 10 10 Ipk/Io = 20 8.0 6.0 4.0 2.0 0 5.0 10 20 15 25 30 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg TJ = 25°C C, CAPACITANCE (pF) Ipk/Io = 5 SQUARE WAVE TC, CASE TEMPERATURE (°C) 10,000 1000 100 0 Ipk/Io = p 12 0 2.0 4.0 6.0 8.0 10 12 14 16 TJ, DERATED OPERATING TEMPERATURE (°C) 0 14 35 125 115 Rtja = 21°C/W 105 95 42°C/W 85 60°C/W 75 75°C/W 65 0 2.0 4.0 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (V) VR, DC REVERSE VOLTAGE (V) Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating Per Leg* 16 *Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 3 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR4015LWT 1.0 50% 20% 10% 5.0% 0.1 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.01 0.00001 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response Junction to Lead (Per Leg) 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% 0.001 Rtjl(t) = Rtjl*r(t) 0.0001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) Figure 10. Thermal Response Junction to Ambient (Per Leg) http://onsemi.com 4 100 1,000 MBR4015LWT PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE E −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J H G D 3 PL 0.25 (0.010) M Y Q DIM A B C D E F G H J K L N P Q U W MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 2: PIN 1. 2. 3. 4. S INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 ANODE CATHODE (S) ANODE 2 CATHODES (S) SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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