MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 8 AMPERES, 100 VOLTS Features •Guardring for Stress Protection •Low Forward Voltage •175°C Operating Junction Temperature •Epoxy Meets UL 94 V-0 @ 0.125 in •Short Heat Sink Tab Manufactured - Not Sheared! •This is a Pb-Free Device 1 4 3 (Pin 1 = No Connect) Mechanical Characteristics: MARKING DIAGRAM •Case: Epoxy, Molded, Epoxy Meets UL 94 V-0 •Weight: 1.7 grams (approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds •Device Meets MSL1 Requirements •ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 146°C IF(AV) 8 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 146°C IFRM 16 A Max Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz, 25°C) IFSM 250 A TJ, Tstg -65 to +175 °C Operating Junction and Storage Temperature Range (Note 1) 4 1 AY WW B8H100G 3 D2PAK CASE 418B PLASTIC A Y WW B8H100 G = Assembly Location = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 2 1 Publication Order Number: MBRB8H100/D MBRB8H100T4G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Thermal Resistance, - Junction-to-Case (Note 2) - Junction-to-Ambient (Note 2) RqJC RqJA 1.1 44 Symbol Value 2. When mounted using minimum recommended pad size on FR-4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 8 A, TJ = 25°C) (IF = 8 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Unit V 0.71 0.55 4.5 5.3 mA mA 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Package Shipping† D2PAK (Pb-Free) 800 Units / Tape & Reel Device MBRB8H100T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRB8H100T4G TYPICAL CHARACTERISTICS 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 1 25°C 150°C 125°C 150°C 25°C 1 0.1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 10 IR, REVERSE CURRENT (mA) 100 IR, REVERSE CURRENT (mA) 125°C 10 150°C 1 125°C 0.1 0.01 0.001 25°C 150°C 10 1 125°C 0.1 0.01 25°C 0.001 0.0001 0.0001 0 10 20 30 40 50 60 70 80 90 0 100 10 20 VR, REVERSE VOLTAGE (V) 50 60 80 70 90 100 Figure 4. Maximum Reverse Current 2000 14 1800 dc RqJC = 1.1 °C/W 12 TJ = 25°C f = 1 MHz IF(AV), AVERAGE FORWARD CURRENT (A) C, CAPACITANCE (nF) 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 1600 30 1400 1200 1000 800 600 400 200 0 Square Wave 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 130 135 140 145 150 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case http://onsemi.com 3 155 MBRB8H100T4G PF(AV), AVERAGE POWER DISSIPATION (W) 8 RJA = 44°C/W dc 7 RJA = 80°C/W NO HEATSINK 6 5 dc 4 3 2 Square Wave 1 0 0 25 50 75 100 125 150 16 14 TJ = 150°C 12 10 Square Wave 8 dc 6 4 2 0 0 2 4 6 8 10 12 16 14 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Ambient Figure 8. Typical Forward Power Dissipation PF(MAX), MAXIMUM POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 16 14 TJ = 150°C 12 Square Wave 10 dc 8 6 4 2 0 0 2 4 6 8 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 9. Maximum Forward Power Dissipation 100 50% (DUTY CYCLE) R(t) (C/W) 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) http://onsemi.com 4 0.1 1.0 10 100 1000 MBRB8H100T4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B-04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V W -B4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 -TSEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R L M P U L L M M F F F VIEW W-W 1 VIEW W-W 2 VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB8H100T4G SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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