IXFN 82N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 72 A IDM TC = 25° C, pulse width limited by TJM 200 A IAR TC = 25° C 82 A EAR TC = 25° C 100 mJ EAS TC = 25° C 5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD TC = 25° C 1040 W Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, IISOL ≤ 1 mA, Md Mounting torque, Terminal connection torque T = 1 min T=1s Weight 300 °C 2500 3000 V~ V~ 1.5/13 lb.in. 30 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS V 5.0 V VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V 25 1000 µA µA RDS(on) VGS = 10 V, ID = IT, Note 1 75 mΩ © 2006 IXYS All rights reserved = = ≤ ≤ TJ = 125° C 600 V 82 A Ω 75 mΩ 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays • • • • Advantages • Easy to mount • Space savings • High power density DS99559E(01/06) IXFN 82N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, Note 1 50 80 S 23 nF 1490 pF 200 pF Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss 28 ns tr td(on) VGS = 10 V, VDS = 0.5 VDSS, ID = IT 23 ns td(off) RG = 1 Ω (External) 79 ns 24 ns 240 nC 96 nC 67 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd SOT-227B Outline 0.12 ° C/W RthJC ° C/W 0.13 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 82 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.6 6.0 µC A Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % Test Current IT = 41A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 82N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 90 180 V GS = 10V 8V 80 70 140 7V 60 I D - Amperes I D - Amperes V GS = 10V 8V 160 50 40 6V 30 120 7V 100 80 60 6V 20 40 10 20 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 2 4 6 90 12 14 16 18 20 3.1 V GS = 10V 7V 80 V GS = 10V 2.8 70 2.5 R DS(on) - Normalized I D - Amperes 10 Fig. 4. R DS(on) Normalized to ID = 41A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 6V 50 40 30 20 2.2 1.9 I D = 82A 1.6 I D = 41A 1.3 1 10 0.7 5V 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V DS - Volts 0 25 50 75 100 125 150 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 41A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3 80 V GS = 10V 2.8 70 TJ = 125ºC 2.6 60 2.4 2.2 I D - Amperes R DS(on) - Normalized 8 V DS - Volts V DS - Volts 2 1.8 1.6 1.4 50 40 30 20 1.2 TJ = 25ºC 10 1 0.8 0 20 40 60 80 100 I D - Amperes © 2006 IXYS All rights reserved 120 140 160 180 0 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 IXFN 82N60P Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 110 TJ = 125ºC 25ºC - 40ºC 100 120 80 g f s - Siemens I D - Amperes 90 140 70 60 50 40 100 TJ = - 40ºC 25ºC 125ºC 80 60 40 30 20 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 V GS - Volts 80 100 120 140 Fig. 10. Gate Charge 250 10 225 9 200 8 175 7 V GS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 150 125 TJ = 125ºC 100 60 I D - Amperes 75 V DS = 300V I D = 41A I G = 10mA 6 5 4 3 TJ = 25ºC 50 2 25 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 25 50 V SD - Volts 75 100 125 150 175 200 225 250 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit C iss 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz C oss 1,000 25µs 100 100µs 1ms 10 10ms DC C rss TJ = 150ºC TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFN 82N60P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10