HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS(on) ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C T J = 25°C to 150°C, RGS = 1 MΩ VGSS VGSM 1000 1000 V V Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 38 152 38 A A A EAR EAS TC = 25°C TC = 25°C 60 5 mJ J dv/dt IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 2500 V VISOL 50/60 Hz, RMS, t = 1 minute Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/11.5 Nm/lb.in. Weight 30 Symbol Test Conditions VDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS All rights reserved g V 5.5 ±200 TJ = 125°C V nA 50 μA 3 mA G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features •Double metal process for low gate resistance •miniBLOC, with Aluminium nitride isolation •Unclamped Inductive Switching (UIS) rated •Low package inductance •Fast intrinsic Rectifier Applications • DC-DC converters • Switched-mode and resonant-mode power supplies • DC choppers • Pulse generators Advantages • Easy to mount • Space savings • High power density 250 mΩ DS99027B(05/08) IXFN38N100Q2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25 Note 1 24 C iss Coss VGS = 0 V, VDS = 25V, f = 1MHz 40 S 13.5 nF 1035 pF 180 pF C rss td(on) Resistive Switching Time 25 ns tr td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) 28 57 ns ns 15 ns tf QG(on) Q GS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 t rr QRM IF = 25A -di/dt = 100 A/μs VR = 100V Inches Min. Max. nC nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 105 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Test Conditions Millimeter Min. Max. 60 0.05 Symbol Dim. 250 0.14 °C/W Source-Drain Diode M4 screws (4x) supplied A B RthJC RthCK miniBLOC, SOT-227 B Outline 38 A 152 A 1.5 V 300 ns 1.4 μC 9 A IRM 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,881,106 4,931,844 4,850,072 5,034,796 5,049,961 5,017,508 5,187,117 5,237,481 5,063,307 5,486,715 6,162,665 5,381,025 6,306,728 B1 6,404,065 B1 6,683,344 6,259,123 B1 6,534,343 6,583,505 6,710,463 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B26,759,692 7,063,975 B2 6,771,478 B27,071,537 IXFN38N100Q2 Fig. 1. Output Characteristics @ 25ºC 40 Fig. 2. Extended Output Characteristics @ 25ºC 80 VGS = 10V 35 VGS = 10V 70 6V 60 I D - Amperes I D - Amperes 30 25 20 15 5V 50 30 10 20 5 10 0 6V 40 5V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 2.8 RD S (on) - Normalized I D - Amperes 18 20 22 24 3.2 VGS = 10V 6V 30 25 5V 20 15 10 VGS = 10V 2.4 2.0 I D = 38A I D = 19A 1.6 1.2 0.8 5 0 0 2 4 6 8 10 12 14 16 18 20 22 0.4 -50 24 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 125 150 125 150 40 VGS = 10V 2.4 35 T J = 1 25ºC 2.2 30 2.0 I D - Amperes RD S (on) - Normalized 10 12 14 16 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature 40 35 8 1.8 1.6 1.4 25 20 15 10 1.2 T J = 25ºC 1.0 5 0.8 0 10 20 30 40 50 I D - Amperes © 2008 IXYS All rights reserved 60 70 80 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFN38N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 80 60 T J = - 40ºC 55 70 50 60 45 I D - Amperes gf s - Siemens T J = 125ºC 40 25ºC 35 - 40ºC 30 25 20 25ºC 50 40 125ºC 30 20 15 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 10 20 Fig. 9. Source Current vs. Source-ToDrain Voltage 40 50 60 70 Fig. 10. Gate Charge 10 90 VDS = 500V I D = 19A I G = 10mA 80 8 70 60 VG S - Volts I S - Amperes 30 I D - Amperes VGS - Volts 50 40 T J = 125ºC 30 20 6 4 2 T J = 25ºC 10 0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 50 V SD - Volts 100 Q G 150 200 250 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100000 1.000 f = 1MHz 10000 Z(th) J C - (ºC/W) Capacitance - pF Ciss Coss 1000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_38N100Q2(95)5-27-08-B