IXYS IXFN38N100Q2_08

HiPerFETTM
Power MOSFET
IXFN38N100Q2
VDSS
= 1000V
ID25
= 38A
Ω
RDS(on) ≤ 250mΩ
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
≤ 300ns
trr
miniBLOC, SOT-227 B (IXFN)
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
T J = 25°C to 150°C, RGS = 1 MΩ
VGSS
VGSM
1000
1000
V
V
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
38
152
38
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
5
mJ
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
890
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
2500
V
VISOL
50/60 Hz, RMS, t = 1 minute
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/11.5 Nm/lb.in.
Weight
30
Symbol
Test Conditions
VDSS
VGS = 0V, ID = 1mA
1000
VGS(th)
VDS = VGS, ID = 8mA
3.0
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS All rights reserved
g
V
5.5
±200
TJ = 125°C
V
nA
50 μA
3 mA
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode
and resonant-mode
power supplies
• DC choppers
• Pulse
generators
Advantages
• Easy to mount
• Space savings
• High power density
250 mΩ
DS99027B(05/08)
IXFN38N100Q2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20V, ID = 0.5 • ID25 Note 1
24
C iss
Coss
VGS = 0 V, VDS = 25V, f = 1MHz
40
S
13.5
nF
1035
pF
180
pF
C rss
td(on)
Resistive Switching Time
25
ns
tr
td(off)
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
28
57
ns
ns
15
ns
tf
QG(on)
Q GS
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
QGD
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
t rr
QRM
IF = 25A
-di/dt = 100 A/μs
VR = 100V
Inches
Min.
Max.
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
105
nC
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
°C/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Test Conditions
Millimeter
Min.
Max.
60
0.05
Symbol
Dim.
250
0.14 °C/W
Source-Drain Diode
M4 screws (4x) supplied
A
B
RthJC
RthCK
miniBLOC, SOT-227 B Outline
38
A
152
A
1.5
V
300
ns
1.4
μC
9
A
IRM
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents:
4,881,106
4,931,844
4,850,072
5,034,796
5,049,961
5,017,508
5,187,117
5,237,481
5,063,307
5,486,715
6,162,665
5,381,025
6,306,728 B1
6,404,065 B1 6,683,344
6,259,123 B1 6,534,343
6,583,505
6,710,463
6,727,585
7,005,734 B2
7,157,338B2
6,710,405 B26,759,692 7,063,975 B2
6,771,478 B27,071,537
IXFN38N100Q2
Fig. 1. Output Characteristics
@ 25ºC
40
Fig. 2. Extended Output Characteristics
@ 25ºC
80
VGS = 10V
35
VGS = 10V
70
6V
60
I D - Amperes
I D - Amperes
30
25
20
15
5V
50
30
10
20
5
10
0
6V
40
5V
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0
2
4
6
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
2.8
RD S (on) - Normalized
I D - Amperes
18 20 22 24
3.2
VGS = 10V
6V
30
25
5V
20
15
10
VGS = 10V
2.4
2.0
I D = 38A
I D = 19A
1.6
1.2
0.8
5
0
0
2
4
6
8
10
12
14
16
18
20 22
0.4
-50
24
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 19A
Value vs. Drain Current
Fig. 6. Drain Current vs.
Case Temperature
2.6
125
150
125
150
40
VGS = 10V
2.4
35
T J = 1 25ºC
2.2
30
2.0
I D - Amperes
RD S (on) - Normalized
10 12 14 16
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 19A
Value vs. Junction Temperature
40
35
8
1.8
1.6
1.4
25
20
15
10
1.2
T J = 25ºC
1.0
5
0.8
0
10
20
30
40
50
I D - Amperes
© 2008 IXYS All rights reserved
60
70
80
0
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
IXFN38N100Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
80
60
T J = - 40ºC
55
70
50
60
45
I D - Amperes
gf s - Siemens
T J = 125ºC
40
25ºC
35
- 40ºC
30
25
20
25ºC
50
40
125ºC
30
20
15
10
10
5
0
0
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
10
20
Fig. 9. Source Current vs. Source-ToDrain Voltage
40
50
60
70
Fig. 10. Gate Charge
10
90
VDS = 500V
I D = 19A
I G = 10mA
80
8
70
60
VG S - Volts
I S - Amperes
30
I D - Amperes
VGS - Volts
50
40
T J = 125ºC
30
20
6
4
2
T J = 25ºC
10
0
0
0.2
0.4
0.6
0.8
1.0
0
1.2
50
V SD - Volts
100
Q
G
150
200
250
- nanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100000
1.000
f = 1MHz
10000
Z(th) J C - (ºC/W)
Capacitance - pF
Ciss
Coss
1000
0.100
0.010
Crss
100
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_38N100Q2(95)5-27-08-B