PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS(on) trr IXFP7N80PM (Electrically Isolated Tab) = = ≤ ≤ 800 3.5 1.44 250 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 3.5 18 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 4 20 300 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD TC = 25°C 50 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Weight Mounting torque 1.13/10 Nm/lb.in. 3.0 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 800 VGS(th) VDS = VGS, ID = 1 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 3.5 A Note 1 © 2006 IXYS All rights reserved TJ = 125°C V 5.0 V ±100 nA 25 500 μA μA 1.44 Ω OVERMOLDED TO-220 (IXTP...M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain Features z z z z z Plastic overmolded tab for electrical isolation Fast intrinsic diode International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99598E(08/06) IXFP7N80PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 3.5 A, Note 1 5 9.5 S 1890 pF 133 pF Crss 13 pF td(on) 28 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 4 A 32 ns td(off) RG = 10 Ω (External) 55 ns 24 ns tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 6 A Qgd 32 nC 12 nC 9 nC 2.5 °C/W RthJC Source-Drain Diode ISOLATED TO-220 (IXFP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 7 A ISM Repetitive 18 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr QRM IRM IF = 7 A, -di/dt = 100 A/μs, VR = 100 V, VGS = 0 V Notes: 1) Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 0.3 3 250 ns μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFP7N80PM Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 7 16 V GS = 10V 7V 6 12 5 6V I D - Amperes I D - Amperes V GS = 10V 7V 14 4 3 6V 10 8 6 2 4 5V 1 2 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 15 18 21 24 27 30 Fig. 4. R DS(on) Normalized to ID = 3.5A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 7 3.2 V GS = 10V 6V V GS = 10V 2.8 R DS(on) - Normalized 6 5 I D - Amperes 12 V DS - Volts V DS - Volts 5V 4 3 2 2.4 2 I D = 7A 1.6 I D = 3.5A 1.2 0.8 1 0.4 0 0 2 4 6 8 10 12 14 16 18 20 22 -50 24 -25 0 25 50 75 100 125 150 T J - Degrees Centigrade V DS - Volts Fig. 5. R DS(on) Normalized to ID = 3.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 4.0 2.8 V GS = 10V 2.6 TJ = 125ºC 3.5 3.0 2.2 I D - Amperes R DS(on) - Normalized 2.4 2 1.8 1.6 2.5 2.0 1.5 1.4 1.0 TJ = 25ºC 1.2 0.5 1 0.8 0.0 0 2 4 6 8 I D - Amperes © 2006 IXYS All rights reserved 10 12 14 16 -50 -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXFP7N80PM Fig. 8. Transconductance Fig. 7. Input Admittance 8 18 7 16 14 5 g f s - Siemens 6 I D - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 4 3 2 12 25ºC 10 125ºC 8 6 4 1 2 0 0 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 0 6 1 2 3 V GS - Volts 4 5 6 7 8 9 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 16 V DS = 400V 9 14 I D = 3.5A 8 I G = 10mA 12 10 V GS - Volts I S - Amperes 7 8 TJ = 125ºC 6 TJ = 25ºC 6 5 4 3 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 5 V SD - Volts 10 15 20 25 30 35 Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10.00 10,000 f = 1 MHz 1,000 R (th)JC - ºC / W Capacitance - PicoFarads C iss C oss 100 1.00 0.10 10 C rss 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10