IXFN210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 200 200 V V VGSS VGSM Continuous Transient ±20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 188 600 A A IA EAS TC = 25°C TC = 25°C 105 4 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 1070 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL 1.6mm (0.062 in.) from Case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z International Standard Package miniBLOC, with Aluminium Nitride Isolation z Low Package Inductance Avalanche Rated z Low RDS(ON) and QG z Fast Intrinsic Diode z Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 105A, Note 1 TJ = 150°C © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings z High Power Density z V 4.5 V ±200 nA 25 2 μA mA 10.5 mΩ Applications z DC-DC Coverters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications z DS100019A(05/10) IXFN210N20P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 60 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 105A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 105A Qgd 103 S 18.6 nF 3270 pF 80 pF 43 ns 30 ns 70 ns 18 ns 255 nC 94 nC 83 nC RthJC 0.14 RthCS °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 210 A ISM Repetitive, Pulse Width Limited by TJM 800 A VSD IF = 105A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 105A, -di/dt = 150A/μs 200 ns μC A Note (M4 screws (4x) supplied) °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) SOT-227B (IXFN) Outline 1.34 18 VR = 100V 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN210N20P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 220 350 VGS = 15V 10V 8V 200 180 160 250 7V 140 ID - Amperes ID - Amperes VGS = 15V 10V 8V 300 120 100 80 7V 200 150 6V 6V 100 60 40 50 5V 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 6 7 8 9 10 Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 3.0 220 VGS = 15V 10V 8V 180 VGS = 10V 2.6 160 R DS(on) - Normalized 200 ID - Amperes 5 VDS - Volts VDS - Volts 7V 140 120 6V 100 80 60 40 5V 2.2 I D = 210A I D = 105A 1.8 1.4 1.0 0.6 20 0 0.2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 200 3.0 TJ = 175ºC 160 2.2 ID - Amperes R DS(on) - Normalized 2.6 VGS = 10V 15V - - - - 1.8 120 80 1.4 TJ = 25ºC 40 1.0 0.6 0 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXFN210N20P Fig. 8. Transconductance 180 160 160 140 140 120 120 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 180 100 TJ = 150ºC 80 25ºC 60 TJ = - 40ºC 25ºC 100 150ºC 80 60 - 40ºC 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 VGS - Volts 140 160 180 10 VDS = 100V 9 300 I D = 105A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 120 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts 60 80 100 120 140 160 180 200 220 240 260 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Cisss 25µs 100µs 10,000 100 ID - Amperes Capacitance - PicoFarads 100 ID - Amperes Coss 1,000 100 1ms 10 1 TJ = 175ºC 10ms TC = 25ºC Single Pulse Crss 10 100ms DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN210N20P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th )JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: F_210N20P(9S) 5-26-10-A