Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE(sat) ≤ 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 IF110 TC = 110°C TC = 110°C 36 10 A A ICM TC = 25°C, 1ms 200 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A (RBSOA) Clamped inductive load @ ≤ 600V PC TC = 25°C 220 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C z TJ TL 1.6mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque 1.13/10 Nm/lb.in. 6.0 g Weight G C E G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z Optimized for low conduction losses Square RBSOA Anti-parallel ultra fast diode International standard package Advantages z z High power density Low gate drive requirement Applications z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0V 3.0 Typ. Max. 5.0 z V 75 μA TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 © 2008 IXYS CORPORATION, All rights reserved z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits 500 μA ±100 nA 1.4 V DS99724A(07/08) IXGH36N60A3D4 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 30A, VCE = 10V, Note 1 25 TO-247 (IXGH) Outline 42 S 2380 pF 115 pF Cres 30 pF Qg 80 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 12 nC Qgc 36 nC td(on) 18 ns tri Eon td(off) tfi IC = 30A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 5Ω Eoff td(on) tri Inductive Load, TJ = 25°C Eon td(off) tfi IC = 30A, VGE = 15V VCE = 400V, RG = 5Ω Eoff 23 ns 0.74 mJ 330 ns 325 ns 3.00 mJ 18 ns 25 ns 1.50 mJ 500 ns 500 ns 5.30 mJ RthJC ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.56 °C/W RthCS 0.21 °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VF IRM trr IF = 10A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. TJ = 150°C 1.7 3.0 V V TJ = 100°C 60 ns IF = 10A, -diF/dt = 200A/μs VR = 300V TJ = 25°C TJ = 100°C 3 4 RthJC A A 2.5 °C/W Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH36N60A3D4 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 60 VGE = 15V 13V 11V 9V 55 50 240 210 40 IC - Amperes IC - Amperes 45 VGE = 15V 13V 11V 270 7V 35 30 25 20 9V 180 150 120 7V 90 15 60 10 5V 5 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 5V 0 2.0 2 4 6 Fig. 3. Output Characteristics @ 125ºC 10 12 16 1.4 VGE = 15V 13V 11V 9V 50 45 VGE = 15V 1.3 VCE(sat) - Normalized 55 40 35 7V 30 25 20 15 10 0 C = 60A I C = 30A I C = 15A 1.1 1.0 0.9 0.8 5V I 1.2 5 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 2.0 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 4.0 180 TJ = 25ºC 3.5 160 3.0 140 I 2.5 C IC - Amperes VCE - Volts 14 Fig. 4. Dependence of VCE(sat) on Junction Temperature 60 IC - Amperes 8 VCE - Volts VCE - Volts = 60A 30A 15A 2.0 120 100 80 60 1.5 TJ = 125ºC 25ºC - 40ºC 40 1.0 20 0.5 0 5 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXGH36N60A3D4 Fig. 17. Gate Charge Fig. 7. Transconductance 80 16 60 14 I C = 30A I G = 10 mA 12 25ºC 50 VGE - Volts g f s - Siemens VCE = 600V TJ = - 40ºC 70 125ºC 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 70 30 35 80 QG - NanoCoulombs IC - Amperes Fig. 19. Reverse-Bias Safe Operating Area Fig. 18. Capacitance 70 10,000 f = 1 MHz Capacitance - PicoFarads 60 IC - Amperes 50 40 30 20 10 TJ = 125ºC Cies 1,000 Coes 100 RG = 5Ω dV / dt < 10V / ns 0 100 200 300 400 500 600 10 700 0 5 10 VCE - Volts 15 20 25 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_36N60A3(55) 07-03-08-A IXGH36N60A3D4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature 11 10 Eon - Eoff I --- C = 60A 3.6 10 3.2 9 8 2.4 7 2.0 6 20 30 40 50 60 70 80 90 8 1.4 7 1.2 6 I 0.6 0.8 0.4 0.4 2 0.0 100 110 120 1 I 25 35 45 55 1.8 115 0.0 125 6 1.0 TJ = 125ºC 0.8 TJ = 25ºC 0.6 - MilliJoules 1.2 on 7 t f - Nanoseconds 1.4 td(off) - - - - 1200 1100 VCE = 400V 800 1000 750 900 700 I C = 60A 650 800 700 600 I C 600 = 15A, 30A 3 0.4 550 500 2 0.2 500 400 0.0 450 15 20 25 30 35 40 45 50 55 0 60 10 20 30 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 850 600 750 RG = 5Ω , VGE = 15V 540 700 VCE = 400V 510 td(off) - - - - 420 500 390 450 360 400 330 TJ = 25ºC 300 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 C = 15A, 30A, 60A 440 400 360 400 320 280 300 55 I 450 350 50 480 ` 500 240 45 520 550 270 40 560 VCE = 400V 600 250 35 600 650 300 30 td(off) - - - - RG = 5Ω , VGE = 15V 700 t f - Nanoseconds 450 TJ = 125ºC 25 300 100 110 120 640 tf 750 t d(off) - Nanoseconds 480 20 90 800 570 650 15 80 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 240 125 t d(off) - Nanoseconds tf 350 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 800 550 60 RG - Ohms IC - Amperes 600 50 t d(off) - Nanoseconds 8 1 t f - Nanoseconds 105 TJ = 125ºC, VGE = 15V 850 1.6 VCE = 400V 4 95 0.2 1300 tf 900 E Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 5 85 950 2.0 9 75 = 15A Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 11 10 65 C TJ - Degrees Centigrade Fig. 14. Inductive Switching Energy Loss vs. Collector Current Eon 1.0 = 30A C 3 RG - Ohms Eoff 1.6 = 60A C 4 I C = 15A 10 I 1.2 4 0 VCE = 400V 0.8 5 2 1.8 RG = 5Ω , VGE = 15V 5 1.6 I C = 30A 3 ---- - MilliJoules 2.8 VCE = 400V Eon on TJ = 125ºC , VGE = 15V 2.0 Eoff E 9 Eon - MilliJoules Eoff - MilliJoules 11 4.0 Eoff - MilliJoules 12 IXGH36N60A3D4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 150 td(on) - - - - TJ = 125ºC, VGE = 15V 120 65 27 100 60 26 70 75 60 t r - Nanoseconds 90 I C = 30A 50 45 40 I 30 C = 15A 30 45 60 70 80 90 20 I C = 30A 19 18 15 5 50 21 20 10 100 110 120 40 22 25 0 30 23 td(on) - - - - VCE = 400V 30 10 20 24 RG = 5Ω , VGE = 15V 35 20 10 tr 40 15 0 25 I C = 60A 50 17 I 25 RG - Ohms t d(on) - Nanoseconds 80 t d(on) - Nanoseconds 105 60 55 90 I C = 60A VCE = 400V 110 t r - Nanoseconds tr 135 Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 35 45 55 65 75 85 C 95 16 = 15A 105 115 15 125 TJ - Degrees Centigrade Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 60 25 tr 55 24 RG = 5Ω , VGE = 15V 50 23 VCE = 400V 45 22 TJ = 125ºC 40 21 TJ = 25ºC 35 20 30 19 25 18 20 17 15 16 10 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - 15 15 20 25 30 35 40 45 50 55 60 IC - Amperes IXYS reserves the right to change limits, test conditions and dimensions. IXYS REF: G_36N60A3(55) 07-03-08-A IXGH36N60A3D4 30 250 A nC 25 20 T VJ = 100°C 15 IF = 5 A 150 IF = 10 A 8 IRM Qr IF = 5 A A V R = 300 V 200 T VJ = 150°C IF 10 T VJ = 100°C IF = 20 A 6 I F = 10 A I F = 20 A 100 4 50 2 T VJ = 100°C 10 5 0 T VJ = 25°C 0 1 2 0 100 V 3 VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr 2.0 ns V R = 300 V 400 600 A/μs 800 1000 -diF/dt 0.3 T VJ = 100°C μs I F = 10 A V FR 40 IF = 5 A 80 0.2 I F = 10 A 1.0 I F = 20 A I RM 60 20 t fr V FR 0.5 Qr 0.0 200 Fig. 23. Peak reverse current IRM V trr Kf 0 60 T VJ = 100°C 100 1.5 0 A/μs 1000 -diF/dt V R = 300 V 0 40 40 80 120 C 160 0 200 T VJ 400 600 800 1000 A/μs 0 0 200 400 -diF/dt Fig. 24. Dynamic parameters Qr, IRM Fig. 25. Recovery time trr versus -diF/dt 10 0.0 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and Constants for ZthJC calculation: K/W i 1 1 2 Z thJC 0.1 0.01 0.001 0.00001 0.1 DSEP 8-06B 0.0001 0.001 0.01 Fig. 27. Transient thermal resistance junction-to-case NOTE: Fig. 2 to Fig. 6 shows typical values © 2008 IXYS CORPORATION, All rights reserved 0.1 s t 1 Rthi (K/W) ti (s) 1.449 0.5578 0.0052 0.0003 t fr