Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C 48 A IF110 TC = 110°C ICM TC = 25°C, 1ms IA EAS 20 A 250 A TC = 25°C 30 A TC = 25°C 300 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 100 (RBSOA) Clamped Inductive Load @ < VCES PC TC = 25°C A G C E G = Gate E = Emitter z z z z -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Advantages z z TL 1.6mm (0.062 in.) from Case for 10s 300 °C z TSOLD Plastic Body for 10 Seconds 260 °C z FC Mounting Torque 1.13/10 Nm/lb.in 6 g z z VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC Characteristic Values Min. Typ. Max. 3.0 5.5 © 2009 IXYS CORPORATION, All Rights Reserved z 50 μA 1.75 mA TJ = 125°C = 30A, VGE = 15V, Note 1 TJ = 125°C z V 2.3 1.8 ±100 nA 2.5 V V High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) = Collector Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode Fast Switching Avalanche Rated International Standard Package W Weight C TAB = Collector Features 300 TJ ( TAB ) z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100139A(06/09) IXGH48N60C3C1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Cies Coes IC Characteristic Values Min. Typ. Max. = 30A, VCE = 10V, Note 1 20 VCE = 25V, VGE = 0V, f = 1MHz 30 2120 420 S pF pF 50 pF 77 16 32 nC nC nC 19 ns 25 0.33 ns mJ Cres Qg Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon Inductive Load, TJ = 25°C td(off) VCE = 400V, RG = 3Ω tfi Note 2 IC = 30A, VGE = 15V 60 100 ns 0.42 mJ 38 Eoff td(on) tri Eon td(off) tfi Eoff TO-247 AD Outline 0.23 Inductive Load, TJ = 125°C IC = 30A, VGE = 15V VCE = 400V, RG = 3Ω Note 2 RthJC RthCS ns 19 28 0.37 92 95 0.57 ns ns mJ ns ns mJ 0.21 0.42 °C/W °C/W ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 20A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 1.65 1.80 TJ = 125°C RthJC Notes 2.10 V V 0.90 °C/W 1. Pulse test, t ≤ 300μs, duty c ycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH48N60C3C1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 300 VGE = 15V 13V 11V 50 IC - Amperes 40 IC - Amperes VGE = 15V 250 9V 30 20 13V 200 150 11V 100 9V 50 10 7V 7V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 2 4 6 8 10 Fig. 3. Output Characteristics @ 125ºC 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.2 60 VGE = 15V 13V 11V 50 VGE = 15V 1.1 VCE(sat) - Normalized I 40 IC - Amperes 12 VCE - Volts VCE - Volts 9V 30 20 1.0 C = 60A 0.9 I 0.8 C = 30A 0.7 7V 10 0.6 0 I = 15A 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 5.0 90 TJ = 25ºC 4.5 80 70 I 3.5 C IC - Amperes 4.0 VCE - Volts C = 60A 30A 15A 3.0 60 TJ = 125ºC 25ºC - 40ºC 50 40 30 20 2.5 10 2.0 0 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 10.0 IXGH48N60C3C1 Fig. 8. Gate Charge Fig. 7. Transconductance 50 16 TJ = - 40ºC 45 14 VCE = 300V 12 I G = 10 mA I C = 30A 40 25ºC 30 10 VGE - Volts g f s - Siemens 35 125ºC 25 20 8 6 15 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0 120 10 20 30 50 60 70 80 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 110 10,000 f = 1 MHz 100 Cies Capacitance - PicoFarads 40 QG - NanoCoulombs IC - Amperes 90 80 IC - Amperes 1,000 Coes 100 Cres 5 10 15 20 25 60 50 40 30 TJ = 125ºC 20 RG = 3Ω dV / dt < 10V / ns 10 0 200 10 0 70 30 35 40 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS REF: G_48N60C3C1(5D)6-04-09 IXGH48N60C3C1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 2.4 1.8 2.4 Eon - --- 1.4 E off - MilliJoules = 60A 1.2 1.2 0.8 0.8 ---- 1.6 1.4 VCE = 400V 1.2 1.2 1.0 1.0 Eon - MilliJoules 1.6 C E on - MilliJoules 1.6 Eon 0.8 0.8 TJ = 125ºC 0.6 0.6 TJ = 25ºC 0.4 0.4 0.2 0.0 0.0 0 5 10 15 20 25 30 0.2 0.0 0.0 15 35 20 25 30 RG - Ohms 2.0 1.6 RG = 3Ω , VGE = 15V Eon 0.8 0.6 0.6 0.4 0.4 I C = 30A 55 65 75 250 110 200 I C = 60A 100 I 85 95 105 0.0 125 115 100 80 50 0 5 10 15 20 25 30 35 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - RG = 3Ω , VGE = 15V 120 160 110 140 120 tf i td(off) - - - - 110 RG = 3Ω , VGE = 15V 90 TJ = 125ºC 80 60 70 40 t f i - Nanoseconds 100 VCE = 400V 120 100 I 100 C = 60A 90 80 80 I 60 60 40 50 20 C = 30A 70 60 TJ = 25ºC 20 15 20 25 30 35 40 45 50 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 55 60 25 35 45 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds VCE = 400V 80 150 = 30A RG - Ohms 160 120 C 90 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 300 120 TJ - Degrees Centigrade 140 td(off) - - - - TJ = 125ºC, VGE = 15V 0.2 0.0 45 - MilliJoules 0.8 35 60 t d(off) - Nanoseconds E 1.0 I C = 60A 25 on 1.2 0.2 55 VCE = 400V 1.4 1.2 tfi 130 1.6 1.0 50 350 1.8 ---- VCE = 400V 1.4 45 140 t f i - Nanoseconds Eoff 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 1.8 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 0.4 0.4 I C = 30A t f i - Nanoseconds 1.8 RG = 3Ω , VGE = 15V 2.0 VCE = 400V I Eoff 1.6 TJ = 125ºC , VGE = 15V Eoff - MilliJoules Eoff 2.0 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 55 65 75 85 95 TJ - Degrees Centigrade 105 115 50 125 IXGH48N60C3C1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 80 tr i 120 td(on) - - - - 70 TJ = 125ºC, VGE = 15V t r i - Nanoseconds 60 80 50 I C = 60A 60 40 40 I C 30 = 30A 20 5 10 15 20 25 30 td(on) - - - - VCE = 400V TJ = 25ºC, 125ºC 80 21 40 19 20 17 15 15 35 20 25 30 35 26 23 60 22 I C = 60A 50 21 40 20 30 19 C = 30A 55 65 60 TJ = 25ºC TJ = 125ºC 30 20 10 18 10 45 40 24 70 35 55 25 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - VCE = 400V 25 50 50 IF - Amperes tr i RG = 3Ω , VGE = 15V 20 45 Fig. 21. Forward Current vs. Forward Voltage 100 I 40 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 23 60 RG - Ohms 90 25 RG = 3Ω , VGE = 15V 0 10 0 tr i 100 20 0 27 t d(on) - Nanoseconds 100 t d(on) - Nanoseconds VCE = 400V 120 t r i - Nanoseconds 140 75 85 95 105 115 17 125 0 0.0 0.4 0.8 1.2 TJ - Degrees Centigrade 1.6 2.0 2.4 2.8 3.2 VF - Volts Fig. 22. Maximum Transient Thermal Impedance for Diode 1.00 Z (th)JC - ºC / W 0.10 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS REF: G_48N60C3C1(5D)6-04-09