LESHAN RADIO COMPANY, LTD. Digital transistors (built-in resistors) LDTA123JET1 FEATURES: 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. 3 1 2 SC-89 PIN 3 COLLECTOR (OUTPUT) STRUCTURE: PNP digital transistor (Built-in resistor type) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR–4 Board (Note 1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR–4 Board (Note 2.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range Symbol Max Unit 200 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RθJA 400 °C/W TJ, Tstg –55 to +150 °C PD RθJA PD 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 × 1.0 Inch Pad DEVICE MARKING LDTA123JET1=6M LDTA123JET1-1/3 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter–Base Cutoff Curren (VEB = 6.0 V, IC = 0) IEBO – – 0.5 mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector–Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 80 140 – VCE(sat) – – 0.25 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) Vdc Input Resistor R1 1.54 2.2 2.86 Resistor Ratio R1/R2 0.038 0.047 0.056 kΩ PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RθJA = 600°C/W 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 1. Derating Curve 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Normalized Thermal Response LDTA123JET1-2/3 LESHAN RADIO COMPANY, LTD. SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. LDTA123JET1-3/3