LRC LDTA123JET1

LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
LDTA123JET1
FEATURES:
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making device design easy.
3
1
2
SC-89
PIN 3
COLLECTOR
(OUTPUT)
STRUCTURE:
PNP digital transistor
(Built-in resistor type)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
Symbol
Max
Unit
200
1.6
mW
mW/°C
600
°C/W
300
2.4
mW
mW/°C
RθJA
400
°C/W
TJ, Tstg
–55 to +150
°C
PD
RθJA
PD
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
DEVICE MARKING
LDTA123JET1=6M
LDTA123JET1-1/3
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
–
–
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
–
–
500
nAdc
Emitter–Base Cutoff Curren
(VEB = 6.0 V, IC = 0)
IEBO
–
–
0.5
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
–
–
Vdc
Collector–Emitter Breakdown Voltage (Note 3.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
–
–
Vdc
hFE
80
140
–
VCE(sat)
–
–
0.25
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
Vdc
Input Resistor
R1
1.54
2.2
2.86
Resistor Ratio
R1/R2
0.038
0.047
0.056
kΩ
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
RθJA = 600°C/W
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Derating Curve
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
LDTA123JET1-2/3
LESHAN RADIO COMPANY, LTD.
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
LDTA123JET1-3/3