LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTC143EET1 3 This new series of digital transistors is designed to replace a single 1 device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 2 SC-89 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC-89 package can be soldered using wave or reflow. The PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Pb-Free Package is Available. PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Rating Collector Current THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR–4 Board (Note 1.) @ TA = 25°C Derate above 25°C Max Unit 200 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RθJA 400 °C/W TJ, Tstg –55 to +150 °C PD Thermal Resistance, Junction to Ambient (Note 1.) RθJA Total Device Dissipation, FR–4 Board (Note 2.) @ TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 × 1.0 Inch Pad DEVICE MARKING AND ORDERING INFORMATION Device LDTC143EET1 LDTC143EET1G Marking Shipping 8J 3000/Tape&Reel 8J (Pb-Free) 3000/Tape&Reel LDTC143EET1-1/3 LESHAN RADIO COMPANY, LTD. LDTC143EET1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VBE = 6.0 V) IEBO – – 1.5 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 15 30 – VCE(sat) – – 0.25 Vdc Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) VOL – – 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) VOH 4.9 – – Vdc Input Resistor R1 3.3 4.7 6.1 kΩ Resistor Ratio R1/R2 0.8 1.0 1.2 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% LDTC143EET1-2/3 LESHAN RADIO COMPANY, LTD. LDTC143EET1 SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS LL DTC143EET1-3/3