LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–89 package which is designed for low power surface mount applications. 3 1 2 SC-89 • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count 1 BASE 3 COLLECTOR R1 R2 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA124EET1 6B 22 22 3000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR–4 Board (Note 1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR–4 Board (Note 2.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range Symbol Max PD 200 Unit 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RθJA 400 °C/W TJ, Tstg –55 to +150 °C RθJA PD 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 × 1.0 Inch Pad P3–1/4 LESHAN RADIO COMPANY, LTD. LDTA124EET1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Base Cutoff Current (V CB = 50 V, IE = 0) I CBO – – Collector–Emitter Cutoff Current (V CE = 50 V, IB = 0) ICEO – – 100 500 nAdc Emitter–Base Cutoff Curren (VEB = 6.0 V, IC = 0 ) Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) IEBO – – 0.2 mAdc V(BR)CBO 50 – – Vdc Collector–Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc hFE 60 100 – VCE(sat) – – 0.25 Vdc VOL – – 0.2 Vdc Input Resistor R1 15.4 22 28.6 kΩ Resistor Ratio R1/R2 0.8 1.0 1.2 DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA, IE = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) nAdc P3–2/4 LESHAN RADIO COMPANY, LTD. LDTA124EET1 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) ELECTRICAL CHARACTERISTIC CURVES IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 TA=75°C 1 10 Figure 2. DC Current Gain 100 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. Output Capacitance V in, INPUT VOLTAGE (VOLTS) 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) versus IC 3 25°C −25°C 100 10 50 VCE = 10 V TA=−25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 4. Output Current versus Input Voltage VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Input Voltage versus Output Current P3–3/4 LESHAN RADIO COMPANY, LTD. LDTA124EET1 SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 −−− −−− 10 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 10 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS P3–4/4