DSS5240Y 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green Device" (Note 2) ESD rating: 400V-MM, 8KV-HBM • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper Plated Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) C C C E C C B B E Top View Top View Pin Out Configuration Device Symbol Ordering Information (Note 3) Product DSS5240Y-7 Notes: Marking ZP8 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com ZP8 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DSS5240Y Document number: DS31683 Rev. 2 - 2 Mar 3 YM Marking Information 2011 Y Apr 4 ZP8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2012 Z May 5 Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O 2016 D Nov N Dec D October 2010 © Diodes Incorporated DSS5240Y Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current (DC) Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value -40 -40 -5 -2 -3 -300 -1 Unit V V V A A mA A Symbol PD RθJA TJ, TSTG Value 625 200 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 10 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 0.8 0.6 0.4 RθJA = 200°C/W 0.2 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) Pw = 100µs 1 0.1 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 177°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.0001 0.001 t1 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (s) 1,000 10,000 100,000 Fig. 3 Transient Thermal Response DSS5240Y Document number: DS31683 Rev. 2 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DSS5240Y Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -40 -40 -5 Typ ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current IEBO ⎯ ⎯ hFE 300 260 210 100 450 380 325 210 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 -0.67 25 220 73 27 46 237 195 42 DC Current Gain (Note 5) Collector-Emitter Saturation Voltage (Note 5) VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage (Note 5) Base-Emitter Turn On Voltage (Note 5) Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time RCE(sat) VBE(sat) VBE(on) Cobo fT ton td tr toff ts tf Max ⎯ ⎯ ⎯ -100 -50 -100 ⎯ ⎯ ⎯ ⎯ -100 -110 -225 -225 -350 -220 -1.1 -0.75 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit V V V nA μA nA ⎯ mV mΩ V V pF MHz ns ns ns ns ns ns Test Condition IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 150°C VEB = -4V, IC = 0 VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A IC = -100mA, IB = -1mA IC = -500mA, IB = -50mA IC = -750mA, IB = -15mA IC = -1A, IB = -50mA IC = -2A, IB = -200mA IC = -500mA, IB = -50mA IC = -2A, IB = -200mA VCE = -2V, IC = -100mA VCB = -10V, f = 1.0MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -10V IC = -1A, IB1 = IB2 = -50mA 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: 2.0 1,000 1.6 800 IB = 5mA hFE, DC CURRENT GAIN IC , COLLECTOR CURRENT (A) 900 IB = 4mA 1.2 IB = 3mA 0.8 IB = 2mA 0.4 700 600 T A = 150°C T A = 125°C T A = 85°C 500 400 TA = 25°C 300 200 IB = 1mA VCE = -2V T A = -55°C 100 0 0 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DSS5240Y Document number: DS31683 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current October 2010 © Diodes Incorporated DSS5240Y 1 1 IC/IB = 20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 T A = 150°C T A = 125°C T A = 85°C 0.01 TA = 25°C TA = -55°C 0.001 0.0001 IC/IB = 10 0.8 T A = -55°C 0.6 TA = 25°C T A = 85°C 0.4 TA = 125°C TA = 150°C 0.2 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current T A = 85°C TA = 25°C 0.01 T A = -55°C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 1.0 TA = 150°C TA = 125°C 0.001 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 0.1 1.2 1.0 IC/IB = 20 0.8 T A = -55°C 0.6 T A = 25°C 0.4 TA = 85°C TA = 125°C TA = 150°C 0.2 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current VCE = 5V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 150°C TA = 125°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 10 Typical Base-Emitter Turn-On Voltage vs. Collector Current DSS5240Y Document number: DS31683 Rev. 2 - 2 4 of 6 www.diodes.com October 2010 © Diodes Incorporated DSS5240Y Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 Y X DSS5240Y Document number: DS31683 Rev. 2 - 2 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DSS5240Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DSS5240Y Document number: DS31683 Rev. 2 - 2 6 of 6 www.diodes.com October 2010 © Diodes Incorporated