BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0009 grams (Approximate) X2-DFN1006-3 C B B C E E Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 3) Product BC846BLP4-7B Notes: Marking 3S Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 3S 3S = Product Type Marking Code Top View Bar Denotes Base and Emitter Side BC846BLP4 Document number: DS35751 Rev. 1 - 2 1 of 6 www.diodes.com February 2012 © Diodes Incorporated BC846BLP4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Peak Emitter Current Symbol VCBO VCEO VEBO IC ICM IEM Value 80 65 6 100 200 200 Unit V V V mA mA mA Symbol Value 0.41 1.05 302 119 -55 to +150 Unit Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) (Note 5) (Note 4) (Note 5) Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: PD RθJA TJ, TSTG W °C/W °C 4. Device mounted on FR-4 PCB with minimum recommended pad layout, in still air conditions; 5. Device mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 2 oz copper, in still air conditions; Typical Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 280°C/W Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 10 100 1,000 P(pk), PEAK TRANSIENT POWER (W) 250 Single Pulse 200 RθJA(t) = r(t) * RθJA RθJA = 280°C/W TJ - TA = P * RθJA(t) 150 100 50 0 1E-06 1E-05 1E-04 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation BC846BLP4 Document number: DS35751 Rev. 1 - 2 2 of 6 www.diodes.com February 2012 © Diodes Incorporated BC846BLP4 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICES 80 65 6 ⎯ ⎯ ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ ⎯ ⎯ ⎯ 15 15 5.0 V V V nA nA µA IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCE = 65V VCB = 40V VCB = 30V, TA = 150°C ON CHARACTERISTICS (Note 5) DC Current Gain hFE 200 VCE(sat) ⎯ Base-Emitter Saturation Voltage VBE(sat) ⎯ Base-Emitter Voltage VBE(on) 580 ⎯ 700 900 660 ⎯ 450 250 600 900 ⎯ 700 770 ⎯ Collector-Emitter Saturation Voltage 290 90 200 VCE = 5V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5V, IC = 2.0mA VCE = 5V, IC = 10mA Cibo Cobo fT ⎯ ⎯ 100 6.7 1.76 300 ⎯ ⎯ ⎯ pF pF MHz Noise Figure NF ⎯ 2 10 dB Delay time Rise time Storage time Fall time td tr ts tf - 11.2 59.7 190.8 108.6 - ns ns ns ns SMALL SIGNAL CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Current Gain-Bandwidth Product mV mV mV Test Condition VCB = 5V, f = 1.0MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 10mA, f = 100MHz VCE = 5V, IC = 200µA, RS = 2.0kΩ, f = 1.0kHz, Δf = 200Hz VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Notes: Typical Electrical Characteristics 1,000 0.6 T A = 150°C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN TA = 125°C TA = 85°C TA = 25°C 100 T A = -55°C 0.5 IB = 50mA IB = 30mA 0.4 0.3 IB = 10mA IB = 5mA IB = 2mA 0.2 IB = 1mA IB = 0.5mA 0.1 IB = 0.2mA 10 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current BC846BLP4 Document number: DS35751 Rev. 1 - 2 3 of 6 www.diodes.com 0 IB = 0.1mA 0 10 20 30 40 50 60 IB, BASE CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Base Current February 2012 © Diodes Incorporated BC846BLP4 1.2 TA = 125°C 0.1 T A = -55°C VBE(ON), BASE-EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 T A = 150°C T A = 25°C TA = 85°C 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Base-Emitter Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 100 VBE(ON), BASE-EMITTER VOLTAGE (V) 1.2 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 T A = -55°C 0.6 TA = 25°C 0.4 T A = 85°C TA = 12 5°C TA = 150°C 0.2 0 0.01 10 1 -30 0 30 60 90 120 150 IC, COLLECTOR CURRENT (mA) Fig. 8 Base-Emitter Voltage vs. Collector Current 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) f = 1MHz CT, TOTAL CAPACITANCE (pF) VCB = 65V 0.1 -60 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Base-Emitter Saturation Voltage vs. Collector Current 100 Cibo Cobo 1 0 0.01 TA = 150°C 0.2 0 0.01 10 T A = 85°C TA = 12 5°C 0.1 1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 9 Total Capacitance vs. Reverse Voltage BC846BLP4 Document number: DS35751 Rev. 1 - 2 4 of 6 www.diodes.com ft Average 100 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Gain-Bandwidth Product vs. Collector Current 100 February 2012 © Diodes Incorporated BC846BLP4 Package Outline Dimensions A A1 D b1 E e b2 L2 L3 X2-DFN1006-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L1 Suggested Pad Layout C X1 X G2 Dimensions Z G1 G2 X X1 Y C G1 Y Z BC846BLP4 Document number: DS35751 Rev. 1 - 2 5 of 6 www.diodes.com Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 February 2012 © Diodes Incorporated BC846BLP4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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