2SC2411K NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 32 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 500 mA Total Device Dissipation TA=25°C PD 200 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C Rating WEITRON http://www.weitron.com.tw 1/5 22-May-08 2SC2411K ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage IC = 1mA, I B = 0 V(BR)CEO 32 - - V Collector-Base Breakdown Voltage IC = 100µA, I E = 0 V(BR)CBO 40 - - V Emitter-Base Breakdown Voltage IE= 100µA, IC=0 V(BR)EBO 5.0 - - V ICBO - - 1.0 µA IEBO - - 1.0 µA VCE(sat) - - 0.4 V hFE 82 - 390 fT - 250 - MHz C ob - 6.0 - pF VCB = 20V, I E = 0 VEB = 4V, I C = 0 ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = 500mA, I B = 50mA DC Current Transfer Ration VCE = 3V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE = 5V, IE = -20mA, f = 100Mhz Output Capacitance VCB = 10V, I E =0mA, f=1Mhz CLASSIFICATION hFE Rank P Q R S Range 82-180 120-270 180-390 270-560 Marking CP CQ CR CRS WEITRON http://www.weitron.com.tw 2/5 22-May-08 2SC2411K Electrical characteristic curves(TA = 25°C) 1000 200 100 COLLECTOR CURRENT : I (mA) Ta=100OC 50 25OC 80OC 25OC 20 10 Ta = 25OC 0.40mA 0.35mA 55 OC 5 2 1 0.5 0.30mA 0.25mA 50 0.20mA 0.15mA 0.10mA 0.05mA 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 0 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA C 400 300 0.8mA 200 0.6mA 0.4mA 100 0.2mA 0 1 2 3 4 I B= 0A 5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta = 25OC 0 Fig.2 Grounded emitter propagation characteristics 500 1 http://www.weitron.com.tw 3 5 Grounded emitter output characteristics(I) Ta = 25OC l C /l B = 10 0.2 0.1 0.05 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Grounded emitter output characteristics(II) WEITRON 2 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.3 1 I B = 0A 4 COLLECTOR TO EMITTER VOLTAGE : VCE(V) BASE TO EMITTER VOLTAGE : VBE(V) Fig.1 COLLECTOR CURRENT : I (mA) A 0.45m A 0.50m C C COLLECTOR CURRENT : I (mA) 100 VCE =6V 500 Fig.4 Collector-emitter saturation voltage vs. collector current 3/5 22-May-08 2SC2411K 500 V CE = 3V TRANSITION FREQUENCY : f (MHz) 500 O 200 100 C Ta = 100O 75 C O 50 C O 25 C O 0 C O 25 C OC 0 5 50 20 10 0.1 0.2 0.5 O Ta = 25 C V CE = 5V T DC CURRENT GAIN : h FE 1000 1 2 5 10 20 50 100 200 200 100 50 500 1000 0.5 1 2 COLLECTOR CURRENT : IC(mA) 5 10 20 50 EMITTER CURRENT : I (mA) E Fig.6 Gain bandwidth product vs. emitter current Fig.5 DC current gain vs. collector current : Cib(pF) EMITTER INPUT CAPACITANCE COLLECTOR OUTPUT CAPACITANCE : Cob(pF) O Ta = 25 C f = 1MHz I E =0A I C = 0A 50 Cib 20 Cob 10 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCE(V) EMITTER TO BASE VOLTAGE: VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage WEITRON http://www.weitron.com.tw 4/5 22-May-08 2SC2411K SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 5/5 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 22-May-08