SS8550 Plastic-Encapsulate Transistors PNP Silicon TO-92 COLLECTOR 3 2 BASE 1. EMITTER 2. BASE 3. COLLECTOR 1 EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol VCEO VCBO VEBO IC SS8550 -25 -40 -5.0 -1.5 Unit Vdc Vdc Vdc Adc Total Device Dissipation TA=25 C PD 1.0 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) ICBO - -0.1 uAdc Emitter Cutoff Current(VEB = -5 Vdc, I C =0 Vdc) I EBO - -0.1 uAdc 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% WEITRON http://www.weitron.com.tw SS8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=-1.0 Vdc) hFE(1) 85 - 400 - DC Current Gain hFE(2) 40 - - - Collector-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) VCE(sat) - - -0.5 Vdc Base-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) VBE(sat) - - -1.2 Vdc fT 100 - - MHz (IC= -800 mAdc, VCE= -1.0 Vdc) Transition Frequency (VCE =-10V, I C =-50mA, f=30 MHz) Classification of hFE(1) Rank B C D E Range 85-160 120-200 160-300 300-400 WEITRON http://www.weitron.com.tw SS8550 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT FIG.1 Static Characteristic FIG.2 DC Current Gain -100 VCE = -1V IC=10IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10000 -1000 VBE(sat) -100 VCE(sat) -10 -1 -0.1 -0.0 -10 -0.1 -1 -10 -100 Cob[pF], CAPACITANCE f=1MHz IE=0 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE FIG.5 Collector Output Capacitance http://www.weitron.com.tw fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 WEITRON -0.6 -0.8 -1.0 -1.2 FIG.4 Base-Emitter On Voltage FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -0.2 -1000 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT FIG.6 Current Gain Bandwidth Product SS8550 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50