RENESAS R1LV0816ASB-5SI

R1LV0816ASB – 5SI, 7SI
8Mb Advanced LPSRAM (512k word x 16bit)
REJ03C0387-0100
Rev.1.00
2009.12.07
Description
The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV0816ASB is suitable for memory applications where a simple interfacing, battery operating and
battery backup are the important design objectives.
The R1LV0816ASB is packaged in a 44pin thin small outline mount device [11.76mm×18.41mm 44-pin
plastic TSOP (II)]. It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
•
•
•
•
•
•
•
•
•
Single 2.4-3.6V power supply
Small stand-by current: 1.2μA (Vcc=3.0V, typ.)
No clocks, No refresh
All inputs and outputs are TTL compatible
Easy memory expansion by CS#, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie capability
OE# prevents data contention in the I/O bus
Operation temperature: -40 ~ +85°C
Ordering information
Type No.
R1LV0816ASB-5SI
R1LV0816ASB-7SI
Power supply
Access time
2.7V to 3.6V
55 ns
2.4V to 2.7V
2.4V to 3.6V
70 ns
70 ns
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 1 of 15
Temperature
Range
Package
-40 ~ +85°C
11.76mm×18.41mm 44-pin plastic TSOP (II)
(normal-bend type) (44P3F)
R1LV0816ASB –5SI, 7SI
Pin Arrangement
44-pin TSOP (II)
A4
1
44
A5
A3
2
43
A6
A2
3
42
A7
A1
4
41
OE#
A0
5
40
UB#
CS#
6
39
LB#
DQ0
7
38
DQ15
DQ1
8
37
DQ14
DQ2
9
36
DQ13
DQ3
10
35
DQ12
VCC
11
34
GND
GND
12
33
VCC
DQ4
13
32
DQ11
DQ5
14
31
DQ10
DQ6
15
30
DQ9
DQ7
16
29
DQ8
WE#
17
28
A8
A18
18
27
A9
A17
19
26
A10
A16
20
25
A11
A15
21
24
A12
A14
22
23
A13
REJ03C0387-0100 Rev.1.00 2009.12.07
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R1LV0816ASB –5SI, 7SI
Pin Description
Pin name
Vcc
Vss
A0 to A18
DQ0 to DQ15
CS#
WE#
OE#
LB#
UB#
Function
Power supply
Ground
Address input (word mode)
Data input/output
Chip select
Write enable
Output enable
Lower byte enable
Upper byte enable
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 3 of 15
R1LV0816ASB –5SI, 7SI
Block Diagram
A0
A1
ADDRESS
ROW
MEMORY ARRAY
BUFFER
DECODER
512k-word x16-bit
DQ0
DQ1
A18
DQ
BUFFER
DQ7
DATA
SENSE / WRITE AMPLIFIER
SELECTOR
DQ8
COLUMN DECODER
DQ
DQ9
BUFFER
CLOCK
DQ15
GENERATOR
CS#
LB#
UB#
WE#
OE#
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 4 of 15
UPPER or
LOWER BYTE
CONTROL
Vcc
Vss
R1LV0816ASB –5SI, 7SI
Operation Table
CS#
WE#
OE#
UB#
LB#
DQ0~7
DQ8~15
Operation
H
X
X
X
X
High-Z
High-Z
Stand-by
X
X
X
H
H
High-Z
High-Z
Stand-by
L
L
X
H
L
Din
High-Z
Write in lower byte
L
H
L
H
L
Dout
High-Z
Read in lower byte
L
L
X
L
H
High-Z
Din
Write in upper byte
L
H
L
L
H
High-Z
Dout
Read in upper byte
L
L
X
L
L
Din
Din
Word write
L
H
L
L
L
Dout
Dout
Word read
L
H
H
L
L
High-Z
High-Z
Output disable
L
H
H
L
H
High-Z
High-Z
Output disable
L
H
H
H
L
High-Z
High-Z
Output disable
Note 1. H: VIH L:VIL
X: VIH or VIL
Absolute Maximum Ratings
Parameter
Power supply voltage relative to Vss
Terminal voltage on any pin relative to Vss
Power dissipation
Operation temperature
Storage temperature range
Storage temperature range under bias
Note 1. -3.0V in case of AC (Pulse width ≤30ns)
2. Maximum voltage is +4.6V
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 5 of 15
Symbol
Vcc
VT
PT
Topr
Tstg
Tbias
Value
-0.5 to +4.6
-0.5*1 to Vcc+0.3*2
0.7
-40 to +85
-65 to 150
-40 to +85
Unit
V
V
W
°C
°C
°C
R1LV0816ASB –5SI, 7SI
Recommend Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Vcc
Vss
2.4
0
2.0
2.2
-0.2
-0.2
-40
3.0
0
-
3.6
0
Vcc+0.2
Vcc+0.2
0.4
0.6
+85
V
V
V
V
V
V
°C
Vcc=2.4V to 2.7V
Vcc=2.7V to 3.6V
Vcc=2.4V to 2.7V
Vcc=2.7V to 3.6V
-
VIH
VIL
Ta
Note
1
1
Note 1. -3.0V in case of AC (Pulse width ≤30ns)
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
Standby current
Standby current
Symbol
Min.
Typ.
Max.
Unit
| ILI |
-
-
1
μA
| ILO |
-
-
1
μA
ICC1
-
20*1
35
mA
ICC2
-
2*1
5
mA
ISB
-
-
1
mA
Vin = Vss to Vcc
CS# =VIH or OE# =VIH or WE# =VIL or
LB# = UB# =VIH, VI/O =Vss to Vcc
Min. cycle, duty =100%, II/O = 0mA
CS# =VIL, Others = VIH/VIL
Cycle =1 s, duty =100%, II/O = 0mA
CS# ≤ 0.2V, VIH ≥ VCC-0.2V, VIL ≤ 0.2V
CS# =VIH
Test conditions
-
1.2*1
4
μA
~+25°C
-
3*2
6
μA
~+40°C
-
-
15
μA
~+70°C
-
-
20
μA
~+85°C
ISB1
Output high voltage
Vin ≥ 0V
(1) CS# ≥ VCC-0.2V or
(2) LB# = UB# ≥ VCC-0.2V,
CS# ≤ 0.2V,
IOH = -1mA
Vcc≥2.7V
VOH2
2.0
V
IOH = -0.1mA
Output low voltage
IOL = 2mA
VOL
0.4
V
Vcc≥2.7V
0.4
V
IOL = 0.1mA
VOL2
Note 1.Typical parameter indicates the value for the center of distribution at 3.0V(Ta=+25°C), and not 100% tested.
2.Typical parameter indicates the value for the center of distribution at 3.0V(Ta=+40°C), and not 100% tested.
VOH
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 6 of 15
2.4
-
-
V
R1LV0816ASB –5SI, 7SI
Capacitance
(Ta =25°C, f =1MHz)
Parameter
Symbol
Min.
Typ.
Input capacitance
C in
Input / output capacitance
C I/O
Note 1.Typical parameter is sampled and not 100% tested.
Max.
10
10
Unit
pF
pF
Test conditions
Vin =0V
VI/O =0V
AC Characteristics
Test Conditions (Vcc = 2.4V ~ 3.6V, Ta = -40 ~ +85°C)
• Input pulse levels: VIL = 0.4V, VIH = 2.4V (Vcc = 2.7V ~ 3.6 V)
VIL = 0.4V, VIH = 2.2V (Vcc = 2.4V ~ 2.7 V)
• Input rise and fall times: 5ns
• Input and output timing reference level: 1.4V
• Output load: See figures (Including scope and jig)
1.4V
RL = 500 ohm
DQ
CL = 30 pF
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 7 of 15
Note
1
1
R1LV0816ASB –5SI, 7SI
Read cycle
R1LV0816ASB-5SI
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Output hold from address change
LB#, UB# access time
Chip select to output in low-Z
LB#, UB# enable to low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
LB#, UB# disable to high-Z
Output disable to output in high-Z
Symbol
tRC
tAA
tACS
tOE
tOH
tBA
tCLZ
tBLZ
tOLZ
tCHZ
tBHZ
tOHZ
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 8 of 15
(Note 0)
Min.
55
10
10
5
5
0
0
0
Max.
55
55
30
55
20
20
20
R1LV0816ASB-7SI
Min.
70
10
10
5
5
0
0
0
Max.
70
70
35
70
25
25
25
Unit
Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2,3
2,3
2,3
1,2,3
1,2,3
1,2,3
R1LV0816ASB –5SI, 7SI
Write Cycle
R1LV0816ASB-5SI
Parameter
Write cycle time
Address valid to end of write
Chip select to end of write
Write pulse width
LB#, UB# valid to end of write
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Output enable from end of write
Output disable to output in high-Z
Write to output in high-Z
Symbol
tWC
tAW
tCW
tWP
tBW
tAS
tWR
tDW
tDH
tOW
tOHZ
tWHZ
(Note 0)
Min.
55
50
50
40
50
0
0
25
0
5
0
0
Max.
20
20
R1LV0816ASB-7SI
Min.
70
65
65
55
65
0
0
35
0
5
0
0
Max.
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
5
4
6
7
2
1,2
1,2
Note 0. If Vcc is 2.4-2.7V, parameters of R1LV0816ASB-7SI (70ns) are applied.
1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. Typical parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for given device and
from device to device.
4. A write occurs during the overlap of a low CS#, a low WE# and a low LB# or low UB#.
A write begins at the latest transitions among CS# going low, WE# going low and LB# going low or UB# going low.
A write ends at the earliest transitions among CS# going high, WE# going high and LB# going high or UB# going
high. tWP is measured from the beginning of write to the end of write.
5. tCW is measured from the later of CS# going low to the end of write.
6. tAS is measured the address valid to the beginning of write.
7. tWR is measured from the earliest of CS# or WE# going high to the end of write cycle.
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 9 of 15
R1LV0816ASB –5SI, 7SI
Timing Waveforms
Read Cycle
tRC
A0~18
tOH
tAA
tBA
LB#,UB#
tBLZ
tBHZ
tACS
CS#
tCLZ
WE#
WE# = “H” level
tCHZ
VIH
VIL
tOE
OE#
tOLZ
tOHZ
High impedance
DQ0~15
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 10 of 15
Valid Data
R1LV0816ASB –5SI, 7SI
Write Cycle (1) (WE# CLOCK)
tWC
A0~18
tOH
tBW
LB#,UB#
tCW
CS#
tAW
tAS
tWP
tWR
WE#
OE#
tWHZ
tOLZ
tOHZ
DQ0~15
tOW
Valid Data
tDW
REJ03C0387-0100 Rev.1.00 2009.12.07
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tDH
R1LV0816ASB –5SI, 7SI
Write Cycle (2) (CS# CLOCK)
tWC
A0~18
tAW
tBW
LB#,UB#
tAS
tCW
tWR
CS#
tWP
WE#
OE#
OE# = “H” level
VIH
VIL
tDW
DQ0~15
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 12 of 15
tDH
Valid Data
R1LV0816ASB –5SI, 7SI
Write Cycle (3) (LB#, UB# CLOCK)
tWC
A0~18
tAW
tAS
tBW
tWR
LB#,UB#
tCW
CS#
tWP
WE#
OE#
OE# = “H” level
VIH
VIL
tDW
DQ0~15
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 13 of 15
tDH
Valid Data
R1LV0816ASB –5SI, 7SI
Data Retention Characteristics
Parameter
VCC for data retention
Symbol
VDR
Min.
Typ.
Max.
Test conditions*3
Unit
1.5
-
3.6
V
Vin ≥ 0V
(1) CS# ≥ VCC-0.2V,
(2) LB# = UB# ≥ VCC-0.2V,
CS# ≤ 0.2V,
-
1.2*1
4
μA
~+25°C
Vcc=3.0V, Vin ≥ 0V
Data retention current
*2
-
3
6
μA
~+40°C
-
-
15
μA
~+70°C
-
-
20
μA
~+85°C
ICCDR
(1) CS# ≥ VCC-0.2V or
(2) LB# = UB# ≥ VCC-0.2V,
CS# ≤ 0.2V,
Chip select to data retention time
tCDR
0
ns
See retention waveform.
Operation recovery time
tR
5
ms
Note 1.Typical parameter indicates the value for the center of distribution at 3.0V(Ta=+25°C), and not 100% tested.
2.Typical parameter indicates the value for the center of distribution at 3.0V(Ta=+40°C), and not 100% tested.
3.CS# controls address buffer, WE# buffer, OE# buffer, LB#, UB# buffer and Din buffer. If CS# controls data retention
mode, Vin levels (address, WE#, OE#, LB#, UB#, DQ) can be in the high impedance state.
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 14 of 15
R1LV0816ASB –5SI, 7SI
Data Retention Timing Waveforms
(1) CS# controlled
Vcc
tCDR
2.4V
2.4V
tR
VDR
2.0V
2.0V
CS# ≥ Vcc - 0.2V
CS#
(2) LB#, UB# controlled
Vcc
tCDR
2.0V
LB#, UB#
REJ03C0387-0100 Rev.1.00 2009.12.07
Page 15 of 15
2.4V
2.4V
VDR
LB#, UB# ≥ Vcc - 0.2V
tR
2.0V
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and regulations, and procedures required by such laws and regulations.
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document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
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subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.