UMN10N Diodes Switching diode UMN10N zApplications Very fast recovery zLand size figure zExternal dimensions (Unit : mm) 2.0±0.1 Each le ad same dimen sio n 0.25 ＋0.1 各リードとも －0.05 同寸法 1.6 (2) 0.65 0.9 (1) 0.65 ＋0.1 0.15 －0.06 (4) 2.1±0.1 (5) 0～0.1 0.1～0.4 1.25±0.1 zFeatures 1) Small mold type. (UMD6) 2) High reliability (6) (3) 0.65 0.65 1.3±0.1 0.35 0.7±0.1 UMD6 0.2±0.1 0～0.1 0.7±0.1 0.9±0.1 zConstruction Silicon epitaxial planer zStructure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) zTaping dimensions (Unit : mm) φ1.55±0.1 0 2.0±0.05 0.3±0.1 2.0±0.05 4.0±0.1 2.2±0.1 2.4±0.1 8.0±0.2 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 φ1.1±0.1 1.35±0.1 zAbsolute maximum ratings (Ta=25°C) Param eter Sym bol Lim its Unit Revers e voltage (repetitive peak) Revers e voltage (DC) Forward current repetitive peak (Single) Average rectified forward current (Single) Surge current （ t=1us ） Power dis s ipation VRM VR IFM Io Isurg e Pd Tj Ts tg 80 80 300 100 4 200 V V mA mA A mW 150 -55 to +150 ℃ Junction tem perature Storage tem perature ℃ zElectrical characteristic (Ta=25°C) Param eter Forward voltage Sym bol Min. Typ. Max. Unit VF - - 1.2 V Conditions IF =100m A Revers e current IR - - 0.1 µA VR =70V Capacitance between term inal Ct - - 3.5 pF VR =6V , f=1MHz Revers e recovery tim e trr - - 4 ns VR =6V , IF=5m A , RL=50 Ω 1/3 UMN10N Diodes zElectrical characteristic curves Ta=150℃ 100 Ta=125℃ 10 10000 Ta=75℃ f=1MHz 1000 Ta=25℃ Ta=150℃ Ta=75℃ Ta=-25℃ 1 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 70 0 80 920 910 70 60 50 40 AVE:9.655nA 30 20 AVE:921.7mV 900 1.2 1.1 1 0.9 0.7 0.6 0 0.5 IR DISPERSION MAP Ct DISPERSION MAP 10 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 8.3ms 10 5 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 5 4 3 2 1 AVE:3.50A 0 Ifsm 4 8.3ms 3 2 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP 1 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=50mA time 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 8 7 6 5 4 3 0.001 1 0 0.1 AVE:2.54kV AVE:0.97kV 2 300us 1 0.1 100 9 Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 Ifsm 8.3ms 1cyc AVE:1.93ns 0 100 AVE:1.081pF 0.8 10 VF DISPERSION MAP 20 Ta=25℃ VR=6V f=1MHz n=10pcs 1.3 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 930 15 1.4 Ta=25℃ VR=80V n=30pcs 80 REVERSE CURRENT:IR(nA) 940 10 1.5 90 Ta=25℃ IF=100mA n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 950 FORWARD VOLTAGE:VF(mV) 1 0.1 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=125℃ 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1