RB751V-40 Diodes Schottky barrier diode RB751V-40 zLand size figure zExternal dimensions (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 1.7±0.1 2.1 zFeatures 1) Ultra small mold type. (UMD2) 2) Low VF 3) High reliability 2.5±0.2 zApplications Low current rectification UMD2 zConstruction Silicon epitaxial planar zStructure 0.7±0.2 0.1 0.3±0.05 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) zTaping dimensions (Unit : mm) 0.3±0.1 φ1.55±0.05 2.0±0.05 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 zAbsolute maximum ratings (Ta=25°C) Param eter Sym bol Lim its Unit R evers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current Forward current s urge peak （ 60Hz・ 1cyc ） J unction tem perature S torage tem perature VRM VR Io IFSM Tj Ts tg 40 30 30 200 125 -40 to +125 V V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Param eter Forward voltage Sym bol Min. Typ. Max. Unit VF - - 0.37 V IF =1m A Conditions Revers e current IR - - 0.5 µA VR =30V Capacitance betw een term inal Ct - 2 - pF VR =1V , f=1MHz Rev.B 1/3 RB751V-40 Diodes zElectrical characteristic curves Ta=125℃ Ta=125℃ Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 Ta=25℃ 1 0.1 Ta=-25℃ 0.01 0.01 0 f=1MHz 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.001 100 200 300 400 500 600 700 800 900 1000 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 1 0.1 30 0 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF分布 290 280 270 260 Ta=25℃ VR=30V n=30pcs 900 800 700 600 500 400 300 200 AVE:267.4mV 100 250 0 6 5 4 AVE:1.97pF 3 2 0 Ct DISPERSION MAP 20 10 9 Ifsm 15 15 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 10 10 AVE:7.30A 5 Ifsm 8 t 7 6 5 4 3 2 1 0 0 1 10 100 0 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 1000 Rth(j-c) 100 Mounted on epoxy board IM=10mA 10 1ms IF=100mA FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.03 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 7 IR DISPERSION MAP 20 5 Ta=25℃ f=1MHz VR=1V n=10pcs 8 1 AVE:185.5nA VF DIPERSION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 1000 300 D=1/2 Sin(θ＝180) 0.02 DC 0.01 0.002 D=1/2 DC 0.001 Sin(θ＝180) time 300us 1 0.001 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB751V-40 Diodes 0.10 Io 0A 0V 0.08 t 0.06 DC 0.04 D=1/2 0.02 T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 Io 0A 0V 0.08 t 0.06 DC 0.04 D=1/2 0.02 T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 0.00 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1