RB751S-40 Diodes Schottky barrier diode RB751S-40 zApplications Low current rectification zLand size figure zExternal dimensions (Unit : mm) 0.12±0.05 0.8 0.6 0.8±0.05 1.2±0.05 1.6±0.1 1.7 zFeatures 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability EMD2 zConstruction Silicon epitaxial planar zStructure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) zTaping specifications (Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 1.26±0.05 0 8.0±0.15 0.6 1.3±0.06 0 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0 空ポケット Empty pocket 2.0±0.05 4.0±0.1 0.76±0.05 zAbsolute maximum ratings (Ta=25°C) Sym bol Lim its Unit R evers e voltage (repetitive peak) VRM 40 V R evers e voltage (DC) Average rectified forward current VR Io 30 30 V mA Forward current s urge peak （ 60Hz・ 1cyc ） IFSM 200 mA J unction tem perature S torage tem perature Tj Ts tg 125 -40 to +125 ℃ Param eter ℃ zElectrical characteristic (Ta=25°C) Param eter Forward voltage Sym bol Min. Typ. Max. Unit VF - - 0.37 V Conditions IF =1m A Revers e current IR - - 0.5 µA VR =30V Capacitance between term ins ls Ct - 2 - pF VR =1V , f=1MHz Rev.B 1/3 RB751S-40 Diodes zElectrical characteristic curves Ta=125℃ Ta=125℃ 1 Ta=-25℃ Ta=25℃ 0.1 Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.01 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=75℃ f=1MHz 100 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 1000 100 0.001 100 200 300 400 500 600 700 800 900 100 0 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 1 0.1 30 0 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF分布 1000 280 270 260 800 700 600 500 400 300 200 100 AVE:267.4mV 5 4 3 2 AVE:2.00pF Ct DISPERSION MAP 20 10 Ifsm 15 15 8.3ms 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 10 5 AVE:7.30A 5 9 Ifsm 8 t 7 6 5 4 3 2 1 0 0 1 IFSM DISPERSION MAP Mounted on epoxy board IM=1mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.003 0.04 IF=10mA 1000 1ms time 300us Rth(j-c) 100 10 0.001 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) DC 0.03 D=1/2 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 6 IR DISPERSION MAP 20 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 7 0 VF DIPERSION MAP 10000 8 1 AVE:185.5nA 0 250 Ta=25℃ f=1MHz VR=1V n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1mA n=30pcs 290 10 Ta=25℃ VR=30V n=30pcs 900 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 300 Sin(θ＝180) 0.02 0.01 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.002 DC D=1/2 Sin(θ＝180) 0.001 0 0.00 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB751S-40 Diodes 0.1 0A 0V 0.08 0.06 DC 0.04 D=1/2 0.02 Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 0A 0V 0.08 0.06 DC 0.04 D=1/2 Io VR D=t/T VR=15V Tj=125℃ t T 0.02 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1