RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zApplication General rectification. zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) 1.1 0.17±0.1 0.05 2.5±0.2 1.9±0.1 zFeatures 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability. 0.8 0.5 2.0 1.3±0.05 TUMD2 zStructure Silicon epitaxial planar zStructure 0.8±0.05 0.6±0.2 ROHM : TUMD2 0.1 dot (year week factory) + day zTaping dimensions (Unit : mm) 8.0±0.2 2.75 4.0±0.1 1.43±0.05 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0 2.0±0.05 3.5±0.05 4.0±0.1 φ1.0±0.2 0 0.9±0.08 zAbsolute maximum ratings (Ta=25°C) Sym bol Lim its Unit R evers e voltage (repetitive peak) VRM 30 V R evers e voltage (DC) Average rectified forward current VR Io 30 700 V mA Param eter Forward current s urge peak （ 60Hz・ 1cyc ） IFSM 5 A J unction tem perature S torage tem perature Tj Ts tg 150 -40 to +150 ℃ ℃ zElectrical characteristics (Ta=25°C) Param eter Sym bol Min. Typ. Max. Unit Forward voltage VF - 0.39 0.42 V IF=700m A Conditions Revers e current IR - 40 200 µA VR =30V Rev.C 1/3 RSX071VA-30 Diodes zElectrical characteristic curves (Ta=25°C) 1000 Ta=150℃ Ta=25℃ Ta=75℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) Ta=125℃ 10000 Ta=75℃ 1000 Ta=25℃ 100 10 Ta=-25℃ 1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 400 390 380 370 REVERSE CURRENT:IR(uA) Ta=25℃ IF=0.7A n=30pcs 250 150 100 AVE:36.59uA 50 180 170 160 150 140 130 120 110 0 VF DISPERSION MAP Ct DISPERSION MAP 30 8.3ms 15 10 AVE:15.6A 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 30 1cyc Ifsm 20 8.3ms 8.3ms 1cyc 20 15 10 5 1 Ifsm t 20 15 10 5 0 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 Mounted on epoxy board IM=10mA 100 0.5 IF=0.2A 0.4 1ms time Rth(j-a) 300us 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 30 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 1 Ifsm 25 0 0 25 AVE:159.7pF 100 IR DISPERSION MAP 30 30 Ta=25℃ f=1MHz VR=0V n=10pcs 190 200 360 25 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ VR=30V n=30pcs AVE:383.9mV PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1 0 600 410 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) 100 10 f=1MHz 100000 Ta=125℃ 1 FORWARD VOLTAGE:VF(mV) 1000 1000000 Ta=150℃ 0.3 D=1/2 0.2 DC Sin(θ＝180) 0.1 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.C 1 2/3 RSX071VA-30 Diodes 2 Sin(θ＝180) DC 1 D=1/2 Io t DC T 1 VR D=t/T VR=15V Tj=150℃ D=1/2 0.5 Sin(θ＝180) 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 t DC T VR D=t/T VR=15V Tj=150℃ 1 D=1/2 0.5 Sin(θ＝180) 0 0 0 Io 0A 0V 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 3 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1