Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ 8 Watt Saturated Output Power Level 2-Octave Bandwidth Variable Drain Voltage (4-10V) Operation MSAG™ Process Description The MAAPGM0074-DIE is a 2-stage 8W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ ♦ ♦ ♦ SatCom Radio Communications Radar Electronic Warfare Also Available in: Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000074-PKG001 MAAP-000074-SMB004 MAAP-000074-SMB001 MAAP-000074-MCH000 Electrical Characteristics: T B = 30°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.1A2, Pin = 28 dBm, RG=40 Ω 1. 2. 1 Parameter Symbol Typical Units Bandwidth f 2.0-8.0 GHz Output Power POUT 39 dBm 1-dB Compression Point P1dB 38 dBm Small Signal Gain G 14 dB Input VSWR VSWR 1.7:1 Output VSWR VSWR 2.2:1 Gate Current IGG 3.5 mA Drain Current IDD 3.5 A 2nd Harmonic, 2-4 GHz 2f 16.5 dBc 2nd Harmonic, 6-8 GHz 2f 72 dBc TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.5V to achieve specified IDQ . M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet Maximum Ratings 3 Parameter Symbol Absolute Maximum Units Input Power PIN 33 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 3.4 A Quiescent DC Power Dissipated (No RF) PDISS 23.4 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 10 10 V Gate Voltage VGG -2.6 -2.2 -1.5 V Input Power PIN 28 30 dBm Thermal Resistance ΘJC 4.3 MMIC Base Temperature TB °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ Power Derating Curve, Quiescent (No RF) Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. Peak Power Dissipation [Watts] 30 25 20 15 10 5 5. Power down sequence in reverse. Turn VGG off last. 0 -40 -20 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Base Temperature [°C] 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet 50 45 43 45 43 41 40 41 39 35 39 37 30 37 35 25 33 20 31 15 31 29 10 29 5 27 0 25 Pout PAE 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 P 1dB (dBm) 45 PAE (%) 35 33 9.0 6V 8V 10V 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (GHz) 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Figure 2. 1dB Compression Point vs. Frequency by Drain Voltage at 25% IDSS 45 45 43 43 41 41 39 39 Psat (dBm) Psat (dBm) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VD =10V, P in=28dBm, and 25% IDSS 37 35 33 37 35 33 31 31 27 -20ºC 33ºC 93ºC 29 6V 8V 10V 29 27 25 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 2.0 9.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Frequency (GHz) Figure 4. Saturated Output Power vs. Frequency by Temperature at 10V and 25% IDSS Figure 3. Saturated Output Power vs. Frequency by Drain Voltage at 25% IDSS 42.00 22.00 18 40.00 20.00 16 38.00 18.00 36.00 16.00 5 14 4 VSWR 12 10 10V Input VSW R OutputVSWR 8 3 6 4 2 2 0 1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Figure 5. Small Signal Gain and Input and Output VSWR vs. Frequency by Drain Voltage at 25% IDSS 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Output Power (dBm), PAE (%) 6 20 Gain (dB) 5.5 Frequency (GHz) 34.00 14.00 Pout PAE SSG IDS 32.00 30.00 12.00 10.00 28.00 8.00 26.00 6.00 24.00 4.00 22.00 30 40 50 60 70 80 90 100 110 120 130 140 SSG (dB), Drain Current (A) P out (dBm) All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 2.00 150 Junction Temperature (ºC) Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10 V, 5.5 GHz, and 25% IDSS • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 45 20.0 43 18.0 41 39 16.0 14.0 35 33 Gain (dB) Output Power (dBm) 37 31 29 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 27 25 23 21 19 12.0 10.0 8.0 6.0 3 GHz 5.5 GHz 8 GHz 4.0 2.0 17 0.0 15 6 8 10 12 14 16 18 20 22 24 26 28 15 30 17 19 21 23 25 Figure 7. Output Power vs. Input Power by Frequency at 10V and 25% IDSS 29 31 33 35 37 39 41 43 Figure 8. Gain vs. Output Power by Frequency at 10V and 25% IDSS 5.0 30 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 24 22 20 18 4.5 4.0 3.5 Drain Current (A) 26 PAE (%) 27 Output Power (dBm) Input Power (dBm) 16 14 12 10 3.0 2.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 2.0 1.5 8 6 1.0 4 0.5 2 0 6 8 10 12 14 16 18 20 22 24 26 28 0.0 30 6 8 10 12 14 16 Input Power (dBm) 18 20 22 24 26 28 30 Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power by Frequency at 10V and 25% IDSS Figure 10. Drain Current vs. Input Power by Frequency at 10V and 25% IDSS 20.0 45 43 18.0 41 16.0 39 14.0 35 33 Gain (dB) Output Power (dBm) 37 31 29 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 27 25 23 21 19 12.0 10.0 8.0 6.0 3 GHz 5.5 GHz 8 GHz 4.0 2.0 17 0.0 15 6 8 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Figure 11. Output Power vs. Input Power by Frequency at 8V and 25% IDSS 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 Output Power (dBm) Figure 12. Gain vs. Output Power by Frequency at 8V and 25% IDSS • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 5.0 30 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 24 22 PAE (%) 20 18 4.5 4.0 3.5 Drain Current (A) 26 16 14 12 10 3.0 2.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 2.0 1.5 8 6 1.0 4 0.5 2 0 6 8 10 12 14 16 18 20 22 24 26 28 30 0.0 6 Input Power (dBm) 8 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power by Frequency at 8V and 25% IDSS Figure 14. Drain Current vs. Input Power by Frequency at 8V and 25% IDSS 100 90 70 60 50 6 dBm 10 dBm 14 dBm 18 dBm 22 dBm 26 dBm 30 dBm 40 2 nd Harmonic (dBc) 80 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Figure 15. Second Harmonic vs. Frequency by Input Power at 10V and 25% IDSS Figure 16. Fixture used to characterize MAAPGM0074-DIE under CW stimulus. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet Mechanical Information Chip Size: 5.000 x 6.346 x 0.075 mm (197 x 250 x 3 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 17. Die Layout Bond Pad Dimensions Pad Size (μm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VD1 200 x 150 8x6 DC Drain Supply Voltage VD2 500 x 200 20 x 8 DC Gate Supply Voltage VG1 150 x 150 6x6 DC Gate Supply Voltage VG2 150 x 125 6x5 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAPGM0074-DIE Rev A Preliminary Datasheet Assembly and Bonding Diagram GND Thermal Management is critical on this part. Refer to Application Note AN3019 for applicable guidelines. NOTE 1: All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. NOTE 2: In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC cross-overs should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. Figure 18. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.