SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) 2.1±0.1 1.7±0.1 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V Drain current Power dissipation DC ID (Note1) 10 Pulse IDP(Note1) 20 PD (Note2) 1 t<10s 1.3±0.1 Absolute Maximum Ratings (Ta = 25°C) 1 6 2 5 3 4 0.7±0.05 2.0±0.1 RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V) 0.65 0.65 RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) +0.1 0.3-0.05 2.5-V drive 0.166±0.05 • A 1,2,5,6 ： Drain W 2 Channel temperature Tch 150 °C UF6 Storage temperature range Tstg −55 to 150 °C JEDEC 3 ： Gate 4 ： Source ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-2T1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 7.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. 2 Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KNI 1 2 1 2010-06-09 SSM6K411TU Electrical Characteristics(Ta = 25°C) Characteristic Symbol Drain-Source breakdown voltage Test Conditions Min Typ. Max V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = -12 V 8 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA Gate leakage current IGSS VGS = ±12 V, VDS = 0 V ⎯ ⎯ ±0.1 μA 0.5 ⎯ 1.2 V 13 ⎯ S Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 2.0 A (Note 3) 6.5 ID = 7.0 A, VGS = 4.5 V (Note 3) ⎯ 8.7 12 Drain–source ON-resistance RDS (ON) ID = 6.0 A, VGS = 3.5 V (Note 3) ⎯ 10.5 14.3 ID = 4.0 A, VGS = 2.5 V (Note 3) ⎯ 15.5 23.8 ⎯ 710 ⎯ ⎯ 240 ⎯ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss ⎯ 170 ⎯ Qg ⎯ 9.4 ⎯ Total Gate Charge Gate-Source Charge Qgs1 Gate-Drain Charge Qgd Switching time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 10 V, ID= 10 A VGS = 4.5 V ⎯ 1.9 ⎯ ⎯ 4.1 ⎯ Turn-on time ton VDD = 10 V, ID = 2 A ⎯ 32 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 23 ⎯ VDSF ID = -10 A, VGS = 0 V(Note 3) ⎯ -0.8 -1.2 Drain-Source forward voltage mΩ pF nC ns V Note 3: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V OUT 10 μs RG IN 0 (b) VIN VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V 90% 10% VDD 90% (c) VOUT VDD 10% VDS (ON) tr ton tf toff Notice on Usage Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1 mA for the SSM6K411TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2010-06-09 SSM6K411TU ID – VDS ID – VGS 100000 20 VGS =12 V Common Source VDS = 3 V 10000 Pulse test 3.5 V (mA) 12 8 1.8 V 4 0 1000 Ta = 100°C ID 4.5 V Drain current Drain current ID (A) 2.5 V 16 0.1 0.3 0.2 Drain-source voltage 0.4 VDS 25°C 10 -25°C 1 Common Source Ta = 25 °C Pulse test 0 100 0.1 0 0.5 0.5 1 Gate-source voltage (V) Drain-source ON-resistance RDS (ON) (mΩ) Drain-source ON-resistance RDS (ON) (mΩ) 40 ID = 4.0A Common Source Pulse test 60 40 20 25°C Ta = 125°C −25°C 0 0 2 4 6 8 Gate-source voltage 10 VGS 5 15 10 ID 20 (A) 10 7.0 A / 4.5 V 5 100 Ta Common Source VDS = 3 V ID = 1 mA Vth (V) Gate threshold voltage Drain-source ON-resistance RDS (ON) (mΩ) 4.5 V Vth – Ta 6.0 A / 3.5 V Ambient temperature 3.5 V 10 2.0 ID = 4.0 A / VGS = 2.5 V 50 VGS = 2.5 V Drain current 20 0 20 (V) 25 0 −50 (V) 30 0 Common Source Pulse Test 15 VGS 2.5 Common Source Ta = 25 °C Pulse test 0 12 RDS (ON) – Ta 30 2 RDS (ON) – ID RDS (ON) – VGS 80 1.5 1.0 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2010-06-09 SSM6K411TU IDR – VDS 100 (A) Common Source VDS = 3 V 30 Ta = 25 °C Pulse test IDR 10 10 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) |Yfs| – ID 100 3.0 1.0 0.3 1 Common Source VGS = 0 V Pulse Test D 0.1 25 °C 0.01 IDR G 100 °C −25 °C 0.1 0.01 0.1 1 Drain current 10 ID S 0.001 100 0 (A) -0.4 -0.6 Drain-source voltage C – VDS 5000 -0.2 -0.8 -1.0 VDS -1.2 (V) Dynamic Input Characteristic 12 300 Coss Crss 100 50 Common Source 30 Ta = 25 °C f = 1 MHz VGS = 0 V 10 0.1 1 10 Drain-source voltage (V) 8 VDD = 10 V VDD = 16 V 6 4 2 0 100 VDS VGS Ciss 10 Gate-source voltage (pF) 500 Capacitance 1000 C 3000 Common Source ID = 10 A Ta = 25 °C 0 10 Total Gate Charge (V) 20 Qg 30 (nC) t – ID 1000 toff 100 Switching time t (ns) tf ton 10 1 0.01 tr Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω 0.1 Drain current 1 ID 10 (A) 4 2010-06-09 SSM6K411TU PD – Ta rth – tw 2.5 Power dissipation PD (W) Transient thermal impedance rth (°C/W) 600 100 10 Single pulse Mounted on FR 4 board (25.4mm × 25.4mm × 1.6mm, 2 Cu Pad : 645 mm ) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 Mounted on FR4 board (25.4mm×25.4mm×1.6mm , 10 s Cu Pad : 645 mm 2 ) 2 1.5 DC 1 0.5 0 -40 1000 (s) -20 0 20 40 60 80 Ambient temperature 5 100 Ta 120 140 160 (°C) 2010-06-09 SSM6K411TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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