TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. SON8-P-0303-0.65 Weight: 0.017g (typ.) Pin Assignment (top view) IN1 1 Marking 8 OUT1 STBY 2 7 VDD IN2 3 6 N.C 7211F 5 OUT2 GND 4 Part No. (or abbreviation code) Lot No. ・● on the lower left of the marking indicates Pin 1 (TOP VIEW) *Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain This product has a MOS structure and is sensitive electrostatic discharge. 1 2011-10-24 TPD7211F Block Diagram / Application Circuit VBATT 250kΩ Regulator Level shift 100kΩ STBY 50kΩ VDD P channel Power MOSFET 100kΩ Motor 150kΩ IN1 OUT1 Logic N channel Power MOSFET 100kΩ 150kΩ Level shift 50kΩ IN2 OUT2 GND 2 2011-10-24 TPD7211F Pin Description Pin No. Symbol Pin Description 1 IN1 2 STBY 3 IN2 4 GND Ground pin. 5 OUT2 Drives the low-side N channel power MOSFET. 6 N.C No-Connect pin. 7 VDD Power supply pin. 8 OUT1 Input pin for high-side output (OUT1) control. The IN1 pin has an internal pull-down resistor. Thus, even if the input is open-circuit, the OUT1 never turns on (“L”) inadvertently. Standby pin:By driving this pin “L”, supply current is 10μA or less and all outputs can be turned off regardless of input signals. By driving this pin “H”, all outputs are switching normally. The STBY pin has an internal pull-down resistor. When input is open circuit, this IC becomes the same operation as “L”. Input pin for low-side output (OUT2) control. The IN2 pin has an internal pull-down resistor. Thus, even if the input is open-circuit, the OUT2 never turns on (“H”) inadvertently. Drives the high-side P channel power MOSFET. 3 2011-10-24 TPD7211F Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Pin Rating Unit Remarks VDD VDD −0.3 to 35 V When VDD range is 30V or more, Pulse width ≤ 0.3s VIN IN1、IN2 −0.3 to 6 V - VSTBY STBY −0.3 to 35 V When VDD range is 30V or more, Pulse width ≤ 0.3s Output voltage VOUT OUT1, OUT2 −0.3 to VDD+0.3 V Absolute Maximum Ratings is 35V or less. When VDD range is 30V or more, Pulse width ≤ 0.3s Output current IOUT OUT1, OUT2 ±500 mA - PD(1) - 0.7 W Refer to Note 2a PD(2) - 0.35 W Refer to Note 2b Topr - −40 to 125 °C - Junction temperature Tj - 150 °C - Storage temperature Tstg - −40 to 150 °C - Power supply voltage Input voltage Power dissipation(Note 2) Operating temperature Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristic Symbol Junction to ambient thermal resistance Rth (j−a) Rating 178.6 (Note 2a) 357.2 (Note 2b) Unit °C / W Note 2: (a)Mounted on glass epoxy board (b) Mounted on glass epoxy board Glass epoxy board Glass epoxy board Material : FR-4 25.4mm×25.4mm×0.8mm 4 Material : FR-4 25.4mm×25.4mm×0.8mm 2011-10-24 TPD7211F Electrical Characteristics (Unless otherwise specified, Tj = − 40 to 125 °C, VDD = 5 to 18 V, VSTBY = 5 V) Characteristics Operating supply voltage Symbol Pin Condition Min Typ. Max Unit VDD(opr) VDD - 5 12 18 V IDD1 VDD - - 10 μA IDD2 VDD - - 3 mA VIH1 IN1,IN2 3.5 - - V VIH2 STBY 3.5 - - V VIL1 IN1,IN2 - - 1.5 V VIL2 STBY - - 0.8 V - 20 50 μA - 15 50 μA -0.2 - +0.2 μA Supply current High level input voltage Low level input voltage High level input current Low level input current IIH1 IIH2 IIL1 VSTBY=0V, VDD=12V, Output pin is open. VSTBY=5V, VDD=12V, VIN1,2=0V, Output pin is open. - IN1,IN2 VIN1,2=5V, per one input. STBY VSTBY=5V IN1,IN2 VIN1,2=0V, per one input. IIL2 STBY VSTBY=0V -0.2 - +0.2 μA High-side(OUT1) high-level output voltage VO1H OUT1 VIN1=0V, Io=-10mA VDD -0.2 - - V High-side(OUT1) low-level output voltage VO1L OUT1 VIN1=5V, Io=+10mA - - 0.2 V Low-side(OUT2) high-level output voltage VO2H OUT2 VIN2=5V, Io=-10mA VDD -0.2 - - V Low-side(OUT2) low-level output voltage VO2L OUT2 VIN2=0V, Io=+10mA - - 0.2 V RDS(ON)[SOURCE] OUT1, Tj=25℃, Io=-250mA OUT2 - 4 8 RDS(ON)[SINK] OUT1, Tj=25℃, Io=+250mA OUT2 - 3 6 - 0.25 1 - 0.5 2 - 0.25 1 0.5 2 Output ON Resistance td(on)1 tON1 td(off)1 Switching times OUT1 Ω tOFF1 VDD=12V, - td(on)2 Ro=25Ω, Co=5000pF - 0.25 1 - 0.5 2 - 0.25 1 - 0.5 2 tON2 td(off)2 OUT2 tOFF2 tdead1 OUT1, t -t ,t -t OUT2 d(off)1 d(on)2 d(off)2 d(on)1 - - 1 tdead2 OUT1, t -t ,t -t OUT2 d(off)1 d(on)1 d(off)2 d(on)2 - - 1 Dead times μs μs *Please set the deadtime of the input signal after considering the switching time of external power MOSFET. *The condition of the typical value is Tj=25°C, VDD=12V. 5 2011-10-24 TPD7211F Switching times test circuit tr ≤ 0.1μs tf ≤ .1μs 25Ω 5000pF IN1 STBY OUT1 90% 10% VIN1(VIN2) VDD VOUT1 IN2 12V 90% N.C 10% VOUT2 OUT2 V V 5000pF P.G 5V P.G 25Ω GND 12V td(on) td(off) ton toff Timing chart VSTBY VIN1 VIN2 VOUT1 VOUT2 By driving STBY low, all output DMOS are turned off regardless of input signals. Input that is High-side/Low-side arm shorting mode(VIN1=VIN2=H) is a prohibition mode. When it is prohibition mode, it is VOUT1=H and VOUT2=L. (External MOSFETs are all off) Truth Table STBY signal IN1 signal IN2 signal VOUT1 VOUT2 L L L H L L H L H L L L H H L L H H H L H L L H L OUT1 and OUT2 are off mode. (External MOSFETs are all off mode) H H L L L OUT1 is on mode. (External high side MOSFET is on mode) H L H H H OUT2 is on mode. (External low side MOSFET is on mode) H H H H L High-side/Low-side arm shorting mode. Remarks Standby mode (Output is all off) 6 2011-10-24 TPD7211F IDD1 - VDD IDD1 - Tj 10 VSTBY=0V VIN1=VIN2=0V Tj=25°C 8 Supply current IDD1[μA] Supply current IDD1[μA] 10 6 4 2 4 8 12 16 8 6 4 2 0 -80 0 0 VSTBY=0V VIN1=VIN2=0V VDD=12V 20 -40 0 4 Supply current IDD2[mA] Supply current IDD2[mA] 5 VSTBY=5V VIN1=VIN2=0V Tj=25°C 3 2 1 0 4 8 120 160 12 16 VSTBY=5V VIN1=VIN2=0V VDD=12V 4 3 2 1 0 -80 20 -40 0 40 80 120 160 Junction temperature Tj[°C] Supply voltage VDD[V] VIH2,VIL2 - Tj VIH1,VIL1 - Tj 5.0 5.0 VDD=12V 4.0 3.0 VIH1 2.0 VIL1 1.0 0.0 VDD=12V 4.0 VIH2,VIL2[V] IN1,IN2 input threshold voltage IN1,IN2 input threshold voltage VIH1,VIL1[V] 80 IDD2 - Tj IDD2 - VDD 5 0 40 Junction temperature Tj[°C] Supply voltage VDD[V] 3.0 VIH2 2.0 VIL2 1.0 0.0 -80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160 Junction temperature Tj[°C] Junction temperature Tj[°C] 7 2011-10-24 TPD7211F IIH1 – VIH1 IIH1 - Tj 50 Tj=25°C IN1,IN2 input current IIH1[μA] IN1,IN2 input current IIH1[μA] 50 40 30 20 10 0 VIN1=VIN2=5V Per one input 40 30 20 10 0 0 1 2 3 4 5 -80 -40 0 Tj=25°C STBY input current IIH2[μA] STBY input current IIH2[μA] 50 40 30 20 10 0 120 160 VSTBY=5V 40 30 20 10 0 0 1 2 3 4 5 -80 -40 0.20 High-side(OUT1) high-level output voltage drop VDD-VO1H[V] VSTBY=5V VIN1=0V IOUT1=-10mA Tj=25°C 0.16 40 80 120 160 VDROP(OUT1) - Tj VDROP(OUT1) - VDD 0.20 0 Junction temperature Tj[°C] STBY Input voltage VSTBY[V] High-side(OUT1) high-level output voltage drop VDD-VO1H[V] 80 IIH2 - Tj IIH2 – VSTBY 50 40 Junction temperature Tj[°C] IN1 ,IN2 Input voltage VIH1[V] 0.12 0.08 0.04 0.00 VSTBY=5V VIN1=0V IOUT1=-10mA VDD=12V 0.16 0.12 0.08 0.04 0.00 0 4 8 12 16 20 -80 -40 0 40 80 120 160 Junction temperature Tj[°C] Supply voltage VDD[V] 8 2011-10-24 TPD7211F VO1L - VDD VO1L - Tj 0.20 VSTBY=5V VIN1=5V IOUT1=+10mA Tj=25°C 0.16 High-side(OUT1) low-level output voltage VO1L[V] High-side(OUT1) low-level output voltage VO1L[V] 0.20 0.12 0.08 0.04 0.00 VSTBY=5V VIN1=5V IOUT1=+10mA VDD=12V 0.16 0.12 0.08 0.04 0.00 0 4 8 12 16 20 -80 -40 Low-side(OUT2) high-level output voltage drop VDD-VO2H[V] Low-side(OUT2) low-level output voltage drop VDD-VO2H[V] 0.20 VSTBY=5V VIN2=5V IOUT2=-10mA Tj=25°C 0.16 0.12 0.08 0.04 0.00 80 120 160 VSTBY=5V VIN2=5V IOUT2=-10mA VDD=12V 0.16 0.12 0.08 0.04 0.00 0 4 8 12 16 20 -80 -40 0 0.20 120 160 0.12 0.08 0.04 0.00 VSTBY=5V VIN2=0V IOUT2=+10mA VDD=12V 0.16 Output voltage VO2L[V] Low-side(OUT2) low -level VSTBY=5V VIN2=0V IOUT2=+10mA Tj=25°C 0.16 80 VO2L - Tj VO2L - VDD 0.20 40 Junction temperature Tj[°C] Supply voltage VDD[V] Low-side(OUT2) low -level Output voltage VO2L[V] 40 VDROP(OUT2) - Tj VDROP(OUT2) - VDD 0.20 0 Junction temperature Tj[°C] Supply voltage VDD[V] 0.12 0.08 0.04 0.00 0 4 8 12 16 20 -80 -40 0 40 80 120 160 Junction temperature Tj[°C] Supply voltage VDD[V] 9 2011-10-24 TPD7211F RDS(ON)[SOURCE] - VDD 10 VSTBY=5V VIN1=0V/VIN2=5V IOUT=-250mA Tj=25°C VSTBY=5V VIN1=0V/VIN2=5V VDD=12V Tj=25°C 6 4 RDS(ON)[SOURCE][Ω] 8 Output ON resistance 8 Output ON resistance RDS(ON)[SOURCE][Ω] RDS(ON)[SOURCE] – IOUT 10 2 6 4 2 0 0 0 4 8 12 16 20 0 -100 10 VSTBY=5V VIN1=0V/VIN2=5V VDD=12V -500mA 6 IOUT =-250mA 4 -400 -500 VSTBY=5V VIN1=5V/VIN2=0V IOUT=+250mA Tj=25°C 8 Output ON resistance RDS(ON)[SINK][Ω] Output ON resistance RDS(ON)[SOURCE][Ω] 8 2 6 4 2 0 0 -80 -40 0 40 80 120 160 0 4 10 VSTBY=5V VIN1=5V/VIN2=0V VDD=12V Tj=25°C 16 20 VSTBY=5V VIN1=5V/VIN2=0V VDD=12V 8 Output ON resistance RDS(ON)[SINK][Ω] 8 12 RDS(ON)[SINK] - Tj RDS(ON)[SINK] - IOUT 10 8 Supply voltage VDD[V] Junction temperature Tj[°C] Output ON resistance RDS(ON)[SINK][Ω] -300 RDS(ON)[SINK] - VDD RDS(ON)[SOURCE] - Tj 10 -200 Output current IOUT[mA] Supply voltage VDD[V] 6 4 2 +500mA 6 4 IOUT =+250mA 2 0 0 0 100 200 300 400 500 -80 -40 0 40 80 120 160 Junction temperature Tj[°C] Output current IOUT[mA] 10 2011-10-24 TPD7211F Switching times (OUT1) - VDD 0.8 Switching times (OUT1) – Tj 1.0 VSTBY=5V VIN1=0V/5V Ro=25Ω,Co=5000pF Tj=25°C Switching times(OUT1) [μs] Switching times(OUT1) [μs] 1.0 toff1 0.6 ton1 0.4 td(off)1 0.2 td(on)1 0.0 0.8 VSTBY=5V VIN1=0V/5V Ro=25Ω,Co=5000pF VDD=12V toff1 0.6 ton1 0.4 td(off)1 0.2 td(on)1 0.0 0 4 8 12 16 20 -80 -40 1.0 VSTBY=5V VIN2=0V/5V Ro=25Ω,Co=5000pF Tj=25°C Switching times(OUT2) [μs] Switching times(OUT2) [μs] 0.8 toff2 0.6 ton2 0.4 td(off)2 0.2 40 80 120 160 Switching times (OUT2) – Tj Switching times (OUT2) - VDD 1.0 0 Junction temperature Tj[°C] Supply voltage VDD[V] td(on)2 0.0 0.8 VSTBY=5V VIN2=0V/5V Ro=25Ω,Co=5000pF VDD=12V toff2 0.6 ton2 0.4 td(off)2 0.2 td(on)2 0.0 0 4 8 12 16 20 -80 -40 0 40 80 120 160 Junction temperature Tj[°C] Supply voltage VDD[V] PD - Ta 1.0 Power dissipation PD[W] (1) Mounted on glass epoxy board (a) (Note 2a) (2) Mounted on glass epoxy board (b) (Note 2b) 0.8 (1) 0.6 (2) 0.4 0.2 0.0 -40 0 40 80 120 160 Ambient temperature Ta[°C] 11 2011-10-24 TPD7211F Package Dimensions SON8-P-0303-0.65 Unit:mm 0.33±0.05 A 2.4±0.1 2.8±0.1 0.05 M B 0.17±0.02 0.05 M A 0.025 S +0.1 0.28 -0.11 S 1.12 0.8±0.05 2.9±0.1 B -0.11 0.65 0.28 +0.1 0.475 +0.13 1.12 +0.13 -0.12 -0.12 0.33±0.05 Weight:0.017g(typ.) 12 2011-10-24 TPD7211F RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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