TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33 ± 0.05 Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance:|Yfs| = 36 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 20 V) • Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 0.05 A M 5 2.4 ± 0.1 8 0.475 1 4 2.8 ± 0.1 • B 0.65 2.9 ± 0.1 0.05 M B A 0.8 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) 0.025 S 0.17 ± 0.02 S ＋0.1 0.28 －0.11 Symbol Rating Unit ＋0.13 1.12 －0.12 Drain-source voltage VDSS 20 V ＋0.13 1.12 －0.12 Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage V Characteristic Drain current VGSS ±12 DC (Note 1) ID 9.1 Pulse (Note 1) IDP 36.4 PD 1.68 Drain power dissipation (t = 5 s) (Note 2a) 0.28 ＋0.1 －0.11 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN A W Drain power dissipation (t = 5 s) (Note 2b) PD 0.84 Single pulse avalanche energy (Note 3) EAS 21.5 mJ Avalanche current IAR 9.1 A Repetitive avalanche energy (Note 4) EAR 0.168 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3V1K Weight: 0.017g(typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking (Note 5) 8 7 6 5 8006 This transistor is an electrostatic-sensitive device. Handle with care. * 1 2 3 4 Lot No. 1 2008-10-22 TPCP8006 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 74.4 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 148.8 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8t Unit: (mm) (a) FR-4 25.4 × 25.4 × 0.8t Unit: (mm) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 9.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: ● on the lower left of the marking indicates Pin 1. * Weekly code (Three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-10-22 TPCP8006 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±12 V, VDS = 0 V ⎯ ⎯ ±100 μA Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ⎯ ⎯ VDS = 10 V, ID = 1 mA 0.5 ⎯ 1.2 VGS = 2.5 V, ID = 4.5 A ⎯ 9.5 13.7 VGS = 4.5 V, ID = 4.5 A ⎯ 6.5 10 VDS = 10 V, ID = 4.5 A 18 36 ⎯ ⎯ 1480 ⎯ ⎯ 330 ⎯ ⎯ 470 ⎯ ⎯ 8 ⎯ ⎯ 16 ⎯ ⎯ 19 ⎯ ⎯ 53 ⎯ ⎯ 22 ⎯ ⎯ 4 ⎯ ⎯ 7 ⎯ Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time tr VDS = 10 V, VGS = 0 V, f = 1 MHz VGS 0V ton Switching time Fall time ID = 4.5 A VOUT 5V RL = 2.22 Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage tf V V mΩ S pF ns VDD ≈ 10 V Turn-off time Total gate charge (gate-source plus gate-drain) toff Duty ≤ 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd VDD ≈ 16 V, VGS = 5 V, ID = 9.1 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 36.4 A ⎯ ⎯ −1.2 V VDSF IDR = 9.1 A, VGS = 0 V 3 2008-10-22 TPCP8006 ID – VDS ID – VDS 10 20 2 1.9 4 Common source Ta = 25°C Pulse test 1.8 8 1.9 16 ID 1.7 6 1.6 4 2 3 Common source Ta = 25°C Pulse test (A) 3 Drain current Drain current ID (A) 4 1.5 2 12 1.8 8 1.7 4 1.6 VGS = 1.4 V 0 0 0.2 0.4 0.8 0.6 Drain−source voltage VDS 0 1 1.5 VGS = 1.4 V 0 (V) 0.4 0.8 VDS (V) Drain−source voltage (A) ID Drain current 8 Ta = −55°C 100 4 25 0 0.5 1 1.5 2 Gate−source voltage 2.5 VGS 0.8 0.6 0.4 0.2 0 3 Common source Ta = 25°C Pulse test 4.5 ID = 9.1 A 2.3 0 (V) 2 4 Drain−source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance Common source VDS = 10 V Pulse test 100°C 25°C 10 1 0.1 1 Drain current VGS 10 (V) RDS (ON) – ID 100 Ta = −55°C 8 6 Gate−source voltage |Yfs| – ID 100 (V) VDS – VGS 12 0 VDS 2 1 Common source VDS = 10 V Pulse test 16 1.6 Drain−source voltage ID – VGS 20 1.2 10 ID 10 (A) VGS = 2.5 V 4.5 1 0.1 100 Common source Ta = 25°C Pulse test 1 Drain current 4 10 ID 100 (A) 2008-10-22 TPCP8006 RDS (ON) – Ta IDR – VDS 20 100 Common source Ta = 25°C Pulse test (A) Pulse test IDR 16 ID = 2.3,4.5,9.1 A Drain reverse current 12 VGS = 2.5 V 8 ID = 2.3,4.5,9.1 A 4.5 V 4 0 −80 −40 0 40 Ambient temperature 80 120 Ta 5 10 VGS = −1 V 1 0 1 0.1 160 3 −0.2 0 −0.4 C – VDS Vth (V) (pF) Gate threshold voltage C (V) 1000 Coss 0.1 Crss 1 10 80 120 VDS 1.2 0.8 Common source VDS = 10 V ID = 1mA Pulse test 0.4 0 −80 100 (V) 24 Drain−source voltage VDS (V) (W) 1.5 1 (2) 0.5 0 40 80 Ambient temperature 40 Ta 160 (°C) Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board (a)(Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t=5s (1) 0 Ambient temperature PD – Ta 2.0 −40 120 Ta 18 (°C) VGS 9 VDS 8V 12 3 0 10 20 Total gate charge 5 6 VDD = 16 V 4V 6 0 160 12 Common source ID = 9.1 A Ta = 25°C Single Pulse test (V) Common source VGS = 0 V f = 1 MHz Ta = 25°C 1.6 VGS Capacitance VDS −1.2 Vth – Ta Ciss Drain−source voltage PD −1 2 100 0.01 Drain power dissipation −0.8 Drain−source voltage (°C) 10000 0 −0.6 30 Qg 40 Gate−source voltage Drain−source ON-resistance RDS (ON) (mΩ) Common source 0 (nC) 2008-10-22 TPCP8006 rth(j−c) − tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 ID max (pulsed)* t = 10 ms* 10 Drain current ID (A) 1 ms* 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain−source voltage VDSS max 10 VDS 100 (V) 6 2008-10-22 TPCP8006 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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