WILLAS FM120-M+ MMBT555xLT1 THRU High Voltage Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize space. AND ORDERING INFORMATION DEVICEboard MARKING FEATURE • Low power loss, high efficiency. Devicecapability, low Marking Shipping forward voltage drop. • High current surge capability. • High MMBT5550LT1 M1F 3000/Tape&Reel • Guardring for overvoltage protection. • Ultra high-speed switching. MMBT5551LT1 G1 3000/Tape&Reel epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of ƽ 0.146(3.7) We declare that the material of product 0.130(3.3) 0.012(0.3) Typ. compliance with RoHS requirements. Pb-Free package is available RoHS product for packing code suffix ”G” 0.071(1.8) Halogen free product for packing code suffix “H” 0.056(1.4) MAXIMUM RATINGS MIL-STD-19500 /228 • RoHS product for packing Ratingcode suffix "G" Symbol Halogen free product for packing code suffix "H" Collector-Emitter Voltage VCEO Mechanical data MMBT5550 MMBT5551 • Epoxy : UL94-V0 rated flame retardant Value Unit Vdc 140 160 0.040(1.0) 0.024(0.6) Collector-Base Voltage VCBO : Molded plastic, SOD-123H • Case 160 MMBT5550 , • Terminals :Plated terminals, solderable per MIL-STD-750 MMBT5551 180 Method 2026 Emitter-Base Voltage Polarity : Indicated by cathode band Collector Current - Continuous Mounting Position : Any • • CHARACTERISTICS •THERMAL Weight : Approximated 0.011 gram Vdc0.031(0.8) Typ. VEBO 6.0 Vdc IC 600 mAdc Characteristic Symbol SOT–23 Dimensions in inches and (millimeters) 3 COLLECTOR Max 1 Unit BASE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation FR– 5 Board, (1) 225 mW Ratings at 25℃ ambient temperature unless otherwise specified. PD 2 TA = 25°C EMITTER Single phase half wave, 60Hz, resistive of inductive load. Derate above 25°C 1.8 mW/°C For capacitive load, derate current by 20% Thermal Resistance, Junction to Ambient RθJA 556 °C/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Total Device Dissipation 300 mW PD Marking CodeAlumina Substrate, (2) TA = 25°C 12 13 14 15 16 18 10 115 120 20 30 40 50 80 100 150 200 Maximum Recurrent Volts VRRM Derate Peak aboveReverse 25°C Voltage 2.4 mW/°C 60 Thermal Maximum RMS VoltageResistance, Junction to Ambient VRMS Storage Temperature Maximum DCJunction Blocking and Voltage VDC 14RθJA J , Tstg T 20 21 417 28 –55 to +150 30 40 °C/W 35 50 °C O unless otherwise noted.) ELECTRICAL CHARACTERISTICS (TA = I25°C Maximum Average Forward Rectified Current IFSM Peak Forward Surge Current 8.3 ms single half sine-wave Characteristic superimposed on rated load (JEDEC method) OFF CHARACTERISTICS Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) Collector–Emitter Breakdown Voltage(3) Storage Temperature Range CHARACTERISTICS µAdc, I E = 0) (I C = 100 Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Breakdown Current at @T A=25℃ Emitter–Base Voltage NOTES: Symbol 56 70 105 140 Volts 60 80 100 150 200 Volts 1.0 Max 30 40 120 V (BR)CEO -55 to +125 140 160 Unit Amps Vdc ℃/W PF -55 to +150 ℃ ℃ Vdc IR V 0.5 (BR)EBO 6.0 — 10 Collector Cutoff Current ( V CB = 100Vdc, I E = 0) MMBT5550 — 100 ( V CB = 120Vdc, I E = 0) MMBT5551 — 50 ( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550 — 100 ( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551 — 50 — 50 Vdc mAmp I CBO Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 2012-06 2012-11 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH MMBT5550 160 — Volts 0.9 0.92 VF 0.50 0.70— 0.85 MMBT5551 180 @T A=125℃ 2- Thermal Resistance From Junction to Ambient Amps — - 65 to +175 — V (BR)CBO 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min 42 TSTG MMBT5551 Collector–Base Breakdown Voltage Rated DC Blocking Voltage (I E = 10 µAdc, I C = 0) CJ TJ MMBT5550 Operating Temperature RangeI B = 0) (I C = 1.0 mAdc, 0.031(0.8) Typ. I EBO nAdc µAdc nAdc WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT555xLT1 FM1200-M+ High MOUNT Voltage Transistors 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H = 25°C ELECTRICAL CHARACTERISTICS profile surface mounted application(TinAorder tounless otherwise noted) (Continued) • Low optimize board space.Characteristic Symbol loss, high efficiency. • Low ONpower CHARACTERISTICS capability, low forward voltage drop. • High current DC Current Gain • High surge capability. (I C = 1.0 mAdc, V CE = 5.0 Vdc) MMBT5550 for overvoltage protection. • Guardring MMBT5551 • Ultra high-speed switching. (I C = 10 mAdc, V CE = 5.0 Vdc) • Silicon epitaxial planar chip, metal silicon junction. MMBT5550 • Lead-free parts meet environmental standards of MMBT5551 (I C = 50 mAdc, V CE = 5.0Vdc) MIL-STD-19500 /228 hFE Halogen free product forSaturation packing code suffix "H" Collector–Emitter Voltage Mechanical data (I = 10 mAdc, I = 1.0 mAdc) 60 80 60 80 20 30 — — 250 250 — — — 0.15 — — 0.25 0.20 V — 1.0 — — 1.2 1.0 0.071(1.8) 0.056(1.4) Vdc 0.031(0.8) Typ. Both Types • • Mounting (I C =Position 50 mAdc,: Any I B = 5.0 mAdc) • Weight : Approximated 0.011 gram 0.012(0.3) Typ. VCE(sat) • Epoxy : UL94-V0 rated flame retardant I B =SOD-123H 5.0 mAdc ) MMBT5550 C = 50 mAdc, plastic, • Case :(IMolded , MMBT5551 • Terminals :Plated terminals, solderable per MIL-STD-750 Base–Emitter Saturation Voltage Method 2026 (I C = 10 mAdc, I B = 1.0 mAdc) Polarity : Indicated by cathode band Unit –– Both Types B Max 0.146(3.7) 0.130(3.3) MMBT5550 MMBT5551 • RoHS product for packing code suffix "G" C Min 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Vdc BE(sat) Dimensions in inches and (millimeters) MMBT5550 MMBT5551 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT555xLT1 High Voltage Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features h FE, DC CURRENT GAIN (NORMALIZED) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 500 • Low profile surface mounted application in order to optimize 300 board Tspace. = +125°C V CE = 1.0 V J 200 loss, high efficiency. • Low power +25°C low forward voltage drop. • High current capability, 100 capability. • High surge –55°C protection. • Guardring for overvoltage 50 • Ultra high-speed switching. • Silicon30epitaxial planar chip, metal silicon junction. 20 parts meet environmental standards of • Lead-free V CE = 5.0 V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 for packing code suffix "G" 10 • RoHS product 7.0free product for packing code suffix "H" Halogen 5.0 Mechanical data 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.040(1.0) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) • Epoxy : UL94-V0 rated flame retardant I C , COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Figure, 15. DC Current Gain • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) I C = 1.0 mA 0.6 10 mA 30 mA 0.2 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM 12 20 13 30 14 40 VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 I B , BASE 30 CURRENT 40 50 (mA) Maximum Average Forward Rectified Current IO Figure 16. Collector Saturation Region 1.0 30 IFSM 0 Maximum Recurrent Peak Reverse Voltage 0.01 0.02 0.05 0.1 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 10 1 V CE = 30 V 10 I C, COLLECTOR CURRENT (µA) Storage Temperature RangeT J = 125°C 10 –1 I C= I TSTG CES 10 –2CHARACTERISTICS VF REVERSE FORWARD Maximum Average 10 Reverse Current at @T A=25℃ NOTES: –3 10 –4 @T A=125℃ 2012-06 2012-11 2.0 42 18 80 5.0 56 60 10 80 40 120 T J = 25°C 10 100 115 150 70 105 20 100 50 150 120 200 Volts 140 Volts 200 Volts Amps Amps ℃/W PF -55 to +150 ℃ to +175 V BE(sat) @ I C /I- B65 = 10 ℃ 0.6 0.50 IR 1- Measured at 1 MHZ 10 –5 and applied reverse voltage of 4.0 VDC. –0.2 –0.1 0 2- Thermal Resistance –0.4 From–0.3 Junction to Ambient 35 16 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 75°C Maximum Forward Voltage at 1.0A DC 25°C 1.0 15 50 -55 to +125 0.8 TJ Operating Temperature Range 1.0 CJ Typical Junction Capacitance (Note 1) 0 0.5 RΘJA Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage 0.2 V, VOLTAGE (VOLTS) 0.005 Maximum RMS Voltage 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 0.4 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Marking Code 0.031(0.8) Typ. Method 2026 1.0 • Polarity : Indicated by cathode band T J = 25°C Position : Any • Mounting 0.8 • Weight : Approximated 0.011 gram 100 0.024(0.6) 0.1 0.2 0.3 0.4 0.5 0.6 0.70 0.4 0.9 0.85 0.92 0.5 mAmp 10 0.2 Volts V CE(sat) @ I C /I B = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages 100 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT555xLT1 High Voltage Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features , TEMPERATURE COEFFICIENT (mV/°C) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 2.5 surface mounted application in order to • Low profile optimize 2board space. T J = –55°C to +135°C loss, high efficiency. • Low power 1.5 • High current capability, low forward voltage drop. 1.0 capability. • High surge 0.5 for overvoltage protection. θ VC for V CE(sat) • Guardring 0 switching. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon–0.5 parts meet environmental standards of • Lead-free –1.0 • 0.146(3.7) 0.130(3.3) 10.2 V V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 50 0.071(1.8) R 0.056(1.4) 3.0 k C V out 5.1 k 100 V in t r , t f <10 ns DUTY CYCLE = 1.0% 30 V RB INPUT PULSE 1N914 0.040(1.0) 0.024(0.6) 100 • Epoxy : UL94-V0 rated flame retardant I CSOD-123H , COLLECTOR CURRENT (mA) • Case : Molded plastic, , Figure 5. Temperature • Terminals :Plated terminals, solderable perCoefficients MIL-STD-750 θ 100 0.25 mF 10 ms 20 30 V CC –8.8 V V in MIL-STD-19500 /228 θ VB for V BE(sat) –1.5 RoHS product for packing code suffix "G" Halogen–2.0 free product for packing code suffix "H" Mechanical data –2.5 V BB 0.012(0.3) Typ. Values Shown are for I C @ 10 mA 0.031(0.8) Typ. Figure 6. Switching Time Test Circuit 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band 100 70 Position : Any • Mounting 50 • Weight : Approximated 0.011 gram 500 C, CAPACITANCE (pF) t r @ V CC = 120 V 300 200 20MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS t r @ V CC = 30 V RATINGS 3.0 t, TIME (ns) Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase half 7.0 wave, 60Hz, resistive of inductive load.C ibo For capacitive5.0 load, derate current by 20% Marking Code I C /I B = 10 T J = 25°C T J = 25°C 30 Dimensions in inches and (millimeters) 1000 100 t d @ V EB(off) = 1.0 V 50 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH C obo FM130-MH FM140-MH 30 V CC = 120 V Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 20 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS 1.0 Voltage VRMS 14 21 10 28 35 42 56 70 105 140 Volts 40 50 200 Volts 2.0 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 20 VDC V R , REVERSE VOLTAGE (VOLTS) Maximum Average Forward Rectified Current IO Maximum DC Blocking Voltage 14 40 0.2 0.3 0.5 30 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 5000 Typical Junction Capacitance (Note 1) 3000 Operating Temperature Range 2000 Storage Temperature Range NOTES: 10 20 30 80 40 120 I C /I B = 10 = 120 V -55 to +125 TSTG t, TIME (ns) 500 T J = 25°C 100 50 100 150 200 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 t f @ V CC = 30 V VF It R@ V 300 s @T A=125℃200 5.0 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage t f @ V CC TJ 60 1000 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC RΘJA CJ 2.0 3.0 I C , COLLECTOR CURRENT (mA) 1.0 8. Turn–On Time 30 Figure 7. Capacitances Figure 1.0 0.50 CC 0.70 0.85 0.5 = 120 V 10 0.9 0.92 Volts mAmps 100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT555xLT1 High MOUNT Voltage Transistors FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Package outline SOT-23 • Batch process design, excellent power dissipation offers SOD-123H .006(0.15)MIN. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. .063(1.60) .047(1.20) • Low power loss, high efficiency. drop. • High current capability, low forward voltage.122(3.10) • High surge capability. .106(2.70) • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .080(2.04) 0.031(0.8) Typ. .083(2.10) .110(2.80) 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Method 2026 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .008(0.20) .003(0.08) .070(1.78) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current 13 30 .020(0.50) 20 VRRM .012(0.30) 14 VRMS Maximum Recurrent Peak Reverse Voltage 21 20 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts IO 1.0 30 Dimensions in inches and (millimeters) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS 40 120 -55 to +125 0.037 0.95 Amps Amps ℃/W PF -55 to +150 0.037 0.95 TSTG ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. .004(0.10)MAX. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.50 0.85 0.5 IR @T A=125℃ 0.70 0.079 2.0 NOTES: 10 0.9 0.92 Volts mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.035 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 0.9 0.031 0.8 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.