< Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 6.6+/-0.3 High power gain: 2 Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz 14.0+/-0.4 1 FEATURES R1.6 High Efficiency: 60%typ. 0.10 2.3+/-0.3 2.8+/-0.3 3.0+/-0.4 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 5.1+/-0.5 3 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 75 W Pin Input power Zg=Zl=50 2.5 W ID Drain current - 7 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance 2.0 °C/W junction to case Note 1: Above parameters are guaranteed independently. Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V Pout Output power f=175MHz ,VDD=12.5V 30 35 - W Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - % Load VSWR tolerance VDD=15.2V,Po=30W(PinControl) D f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) Note : Above parameters , ratings , limits and conditions are subject to change. Publication Date : Oct．2011 2 No destroy - < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V 80 8 60 6 Ids(A) CHANNEL DISSIPATION Pch(W) ... 100 40 4 2 20 0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 0 Vds-Ids CHARACTERISTICS 1 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 10 200 Vgs=5.5V 180 Ta=+25°C 8 Vgs=5V 6 Vgs=4.5V Ta=+25°C f=1MHz 160 Vgs=4V 4 Ciss(pF) Ids(A) 140 120 100 80 60 Vgs=3.5V 2 40 20 Vgs=3V 0 0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 140 20 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 120 16 Crss(pF) Coss(pF) 100 80 60 12 8 40 4 20 0 0 0 5 10 Vds(V) 15 0 20 Publication Date : Oct．2011 3 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Po 40 30 60 Gp 20 40 10 Ｉｄｄ 0 10 20 Pin(dBm) 30 20 20 10 0 0 30 20 Idd 0 0.5 1 1.5 Pin(W) 0 2.5 2 Vgs-Ids CHARACTERISTICS 2 80 8 16 Ta=25°C f=175MHz Pin=1.0W Idq=0.5A Zg=ZI=50 ohm Vds=10V Tc=-25~+75°C 14 +25°C -25°C 6 12 8 Idd(A) 40 Ids(A) 10 Po Po(W) 40 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A Vdd-Po CHARACTERISTICS 60 60 ηd +75°C 4 6 Idd 20 2 4 2 0 0 0 4 6 8 10 Vdd(V) 12 ηd(%) ηｄ 0 80 80 Pout(W) , Idd(A) 40 100 100 Po ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A 50 Pin-Po CHARACTERISTICS 2 14 3 4 Vgs(V) Publication Date : Oct．2011 4 5 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W TEST CIRCUIT(f=175MHz) Vdd Vgg C1 9.1kOHM L1 C3 100OHM 8.2kOHM L2 10pF 175MHz RD30HVF1 L1 RF-in C2 RF-OUT 56pF 56pF 100pF 100pF 33pF 100pF 8pF 12 43pF 5pF 50pF 27 32 34 51 4.8 32 44 54 90 C2:2200pF*2 in parallel C3:2200pF,330uF in parallel 10.8 90 100 C1:2200pF 10uF in parallel 8 10 100 Note:Board material PTFE substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire Publication Date : Oct．2011 5 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=175MHz Zout Zo=10 f=146MHz Zout f=135MHz Zout f=175MHz Zin f=135MHz Zin f=146MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 135 0.71-j7.67 1.72-j0.86 Po=40W, Vdd=12.5V,Pin=1.0W 146 0.94-j6.46 2.12-j0.78 Po=38W, Vdd=12.5V,Pin=1.0W 175 0.53-j5.34 1.87-j0.70 Po=35W, Vdd=12.5V,Pin=1.0W Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1100 S11 (mag) 0.867 0.879 0.885 0.888 0.905 0.915 0.926 0.933 0.936 0.945 0.950 0.951 0.954 0.957 0.962 0.963 0.963 0.963 0.962 0.964 0.966 S21 (ang) -172.4 -176.3 -177.5 -179.1 178.5 176.2 174.1 171.8 169.5 167.6 165.6 163.6 161.7 159.9 158.2 156.5 154.8 153.2 151.6 150.1 146.9 (mag) 8.747 5.523 4.571 3.852 2.877 2.202 1.754 1.422 1.167 0.985 0.842 0.725 0.635 0.559 0.495 0.449 0.407 0.366 0.337 0.315 0.275 S12 (ang) 72.7 61.2 56.4 52.4 44.1 37.1 31.4 25.8 20.9 17.2 13.3 9.8 7.2 3.7 1.3 -0.5 -3.8 -5.2 -6.6 -9.9 -12.1 Publication Date : Oct．2011 7 (mag) 0.015 0.014 0.013 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.005 0.005 0.005 0.007 0.007 0.008 0.009 0.011 0.011 0.013 0.015 S22 (ang) -11.6 -18.8 -22.2 -24.2 -26.2 -27.0 -24.4 -18.5 -8.2 8.0 21.6 35.6 45.7 53.5 58.4 61.6 60.7 61.5 63.1 65.6 62.3 (mag) 0.687 0.723 0.740 0.760 0.806 0.825 0.853 0.879 0.887 0.902 0.914 0.918 0.928 0.933 0.936 0.943 0.947 0.947 0.953 0.955 0.958 (ang) -166.3 -168.8 -169.6 -170.5 -172.5 -174.8 -177.1 -179.4 178.4 176.1 174.1 172.2 170.2 168.4 166.6 164.8 163.3 161.7 159.9 158.7 155.5 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 8 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 9