MITSUBISHI RD05MMP1_11

< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
(a)
OUTLINE DRAWING
7.0+/-0.2
0.2+/-0.05
RD05MMP1 is a MOS FET type transistor
(b)
(b)
0.65+/-0.2
DESCRIPTION
8.0+/-0.2
FEATURES
(4.5)
INDEX MARK
[Gate]
(c)
TOP VIEW
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•No gate protection diode
SIDE VIEW
BOTTOM VIEW
1.8+/-0.1
DETAIL A
0.7+/-0.1
•High Efficiency: 43%min. (941MHz)
2.6+/-0.2
0.95+/-0.2
SIDE VIEW
APPLICATION
For output stage of high power amplifiers in
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
Standoff = max 0.05
•High power gain:
4.2+/-0.2
(d)
5.6+/-0.2
(3.6)
amplifiers applications.
6.2+/-0.2
specifically designed for UHF RF power
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
941MHz band mobile radio sets.
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting
temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
Vgs=0V
40
V
VGSS
Gate to source voltage
Vds=0V
-5 to +10
V
Pch
Channel dissipation
Tc=25°C
73
W
Pin
Input Power
Zg=Zl=50
1.4
W
ID
Drain Current
-
3
A
Tch
Junction Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125
°C
Rth j-c
Thermal resistance
1.7
°C/W
Junction to case
Note: Above parameters are guaranteed independently.
Publication Date : Oct.2011
1
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX.
IDSS
Zero gate voltage drain current
VDS=17V, VGS=0V
-
-
10
uA
IGSS
Gate to source leak current
VGS=10V, VDS=0V
-
-
1
uA
VTH
Gate threshold Voltage
VDS=12V, IDS=1mA
0.5
-
2.5
V
Pout
Output power
f=941MHz , VDD=7.2V
5.5
6
-
W
Drain efficiency
Pin=0.7W,Idq=1.0A
43
-
-
%
D
VDD=9.5V,Po=5.5W(Pin Control)
VSWRT Load VSWR tolerance
f=941MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
Publication Date : Oct.2011
2
No destroy
-
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
CHANNEL DISSIPATION Pch(W)
,
60
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
*PCB: Glass epoxy (t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(0.5)
50
Ids(A),gm(S)
40
30
On PCB with Termal sheet
and Heat-sink
20
4
GM
2
10
Free Air
0
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
Vds-Ids CHARACTERISTICS
Vgs=5.0V
2
3
Vgs(V)
4
5
160
Ta=+25°C
8
Ta=+25°C
f=1MHz
140
7
Vgs=4.5V
120
5
Ciss(pF)
6
Ids(A)
1
Vds VS. Ciss CHARACTERISTICS
9
Vgs=4.0V
4
3
100
80
60
Vgs=3.5V
40
2
1
20
Vgs=3.0V
0
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
0
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
160
20
Ta=+25°C
f=1MHz
140
Ta=+25°C
f=1MHz
18
16
120
14
100
Crss(pF)
Coss(pF)
Ids
6
80
60
12
10
8
6
40
4
20
2
0
0
0
5
10
Vds(V)
15
0
20
Publication Date : Oct.2011
3
5
10
Vds(V)
15
20
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
Pin-Po CHARACTERISTICS @f=941MHz
20
60
ηd
20
40
Gp
10
Pout(W) , Idd(A)
15
30
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
80
Ta=25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
80
Po
70
50
10
30
5
20
20
Idd
0
5
10
15
20
25
Pin(dBm)
30
0
35
0.0
10
0
1.5
1.0
Vgs-Ids CHARACTORISTICS 2
8
5
Ta=25°C
f=941MHz
Pin=0.7W
Idq=1.0A
Zg=ZI=50 ohm
Po
4
3
4
2
Idd
+75°C
6
Ids(A),gm(S)
6
+25°C
-25°C
Vds=10V
Tc=-25~+75°C
Idd(A)
Po(W)
0.5
10
Pin(W)
Vdd-Po CHARACTERISTICS @f=941MHz
8
40
Po
Idd
0
60
ηd
4
2
2
1
0
0
4
6
8
Vdd(V)
ηd(%)
Ta=+25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
40
10
0
0
12
1
2
Vgs(V)
Publication Date : Oct.2011
4
3
4
5
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TEST CIRCUIT (f=941MHz)
Vgg
Vdd
22μF、50V
C1
C2
W
19mm
W
RD05MMP1
941MHz
4.7k OHM
130pF
8mm
20mm
3mm
9pF
L
0.5mm
12mm
19mm
2pF*
6mm
21mm
4mm
RF-OUT
130pF
RF-in
9pF
1pF
2pF*
12pF*
Note:Boad material PTFE substrate
Micro strip line width=2.2mm/50、er:2.6、t=0.8mm
W:Line width=1.0mm
:Spring(gilding)、X:3mm Y:2.5mm
L:24.9nH、6Turns、D:0.43mm、φ2.46mm(outside diameter)
C:GRM39、”*” Mark C:GRM708
C1、C2:1000pF
Publication Date : Oct.2011
5
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
(mag)
0.841
0.845
0.846
0.848
0.848
0.852
0.858
0.861
0.866
0.872
0.877
0.878
0.880
0.886
0.891
0.897
0.900
0.904
0.905
0.907
0.913
0.918
0.920
0.920
0.925
0.925
0.927
0.931
0.929
0.936
0.936
0.935
0.935
0.933
0.938
0.943
0.943
S21
(ang)
-169.5
-171.5
-172.4
-173.3
-173.7
-174.5
-174.9
-175.2
-175.3
-175.5
-175.5
-176.2
-176.6
-177.1
-177.2
-177.2
-177.3
-177.6
-178.1
-178.6
-178.9
-178.9
-178.9
-179.1
-179.5
179.8
179.5
179.2
179.3
179.2
179.0
178.5
178.1
177.9
177.8
177.8
177.5
(mag)
7.706
6.148
5.024
4.240
3.669
3.227
2.856
2.543
2.279
2.068
1.886
1.735
1.584
1.456
1.343
1.249
1.164
1.086
1.010
0.945
0.889
0.833
0.786
0.741
0.698
0.660
0.625
0.595
0.565
0.537
0.513
0.488
0.469
0.446
0.426
0.404
0.388
S12
(ang)
82.9
78.7
75.0
72.0
69.4
66.5
63.6
60.8
58.6
56.5
54.1
51.5
49.3
47.4
45.9
44.1
42.2
40.3
38.7
37.2
35.8
34.6
33.2
31.9
30.6
29.4
28.3
27.1
26.3
25.4
24.6
23.6
22.6
21.7
20.3
20.3
19.9
(mag)
0.020
0.020
0.019
0.018
0.017
0.017
0.017
0.016
0.015
0.014
0.013
0.013
0.012
0.011
0.011
0.011
0.010
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.012
0.013
0.013
0.014
0.015
0.016
0.017
0.019
0.020
0.023
0.024
0.019
0.019
Publication Date : Oct.2011
6
S22
(ang)
-3.4
-5.0
-6.5
-6.6
-7.1
-8.5
-8.9
-8.7
-8.2
-3.2
-4.3
-3.6
-0.8
2.0
7.3
10.5
16.6
19.9
25.6
30.6
35.9
40.4
46.3
49.2
51.0
57.5
58.5
60.4
62.2
67.1
67.9
68.4
67.0
64.2
52.9
51.8
61.8
(mag)
0.806
0.817
0.810
0.817
0.822
0.835
0.841
0.838
0.840
0.849
0.858
0.868
0.869
0.868
0.874
0.880
0.886
0.893
0.893
0.897
0.901
0.908
0.911
0.909
0.915
0.916
0.917
0.921
0.925
0.924
0.923
0.921
0.922
0.919
0.906
0.920
0.933
(ang)
-171.5
-172.9
-174.2
-174.7
-175.0
-175.1
-175.3
-175.8
-176.2
-176.4
-176.8
-177.0
-177.4
-177.5
-177.8
-178.2
-178.7
-179.1
-179.0
-179.4
-179.9
179.6
179.2
179.0
178.6
178.4
177.9
177.4
177.0
176.7
176.6
176.3
175.5
175.0
175.4
176.6
176.0
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
(mag)
0.878
0.884
0.880
0.877
0.879
0.888
0.888
0.884
0.884
0.891
0.893
0.897
0.897
0.896
0.902
0.903
0.906
0.905
0.906
0.910
0.914
0.915
0.916
0.917
0.919
0.921
0.925
0.924
0.926
0.927
0.929
0.929
0.931
0.930
0.928
0.932
0.937
S21
(ang)
-174.2
-175.6
-176.9
-177.4
-177.7
-178.2
-178.7
-179.1
-179.2
-179.6
-179.7
179.8
179.7
179.6
179.3
178.9
178.7
178.5
178.4
178.2
177.9
177.5
177.3
177.3
177.2
176.9
176.6
176.5
176.3
176.1
175.8
175.6
175.5
175.2
175.2
174.8
174.8
(mag)
7.474
6.046
4.919
4.153
3.636
3.246
2.912
2.598
2.351
2.152
1.995
1.849
1.708
1.580
1.475
1.388
1.308
1.222
1.152
1.086
1.030
0.978
0.928
0.877
0.832
0.798
0.759
0.725
0.694
0.661
0.634
0.611
0.585
0.562
0.539
0.518
0.496
S12
(ang)
85.7
81.9
78.9
77.5
76.1
73.8
71.1
69.0
67.4
66.0
64.1
62.2
60.0
58.5
57.1
55.6
53.7
52.1
50.6
49.4
48.2
46.6
45.1
43.8
43.0
41.7
40.5
39.2
38.3
37.2
36.5
35.5
34.3
33.4
32.6
31.9
31.1
(mag)
0.014
0.014
0.014
0.013
0.013
0.013
0.013
0.012
0.012
0.012
0.012
0.011
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.012
0.013
0.013
0.014
0.015
0.015
0.015
0.016
0.016
0.017
0.018
0.019
0.019
0.020
0.021
0.022
0.022
Publication Date : Oct.2011
7
S22
(ang)
4.3
2.9
3.3
4.7
8.8
4.2
7.9
9.1
11.5
13.3
18.1
16.1
20.8
25.7
26.7
30.8
33.2
35.6
38.7
42.5
45.7
46.2
52.5
53.1
55.3
56.8
59.3
59.2
62.2
63.6
64.2
65.1
66.8
66.6
65.2
67.9
68.8
(mag)
0.869
0.865
0.865
0.872
0.873
0.875
0.874
0.869
0.872
0.882
0.884
0.886
0.883
0.883
0.886
0.892
0.893
0.894
0.896
0.898
0.902
0.906
0.906
0.906
0.905
0.908
0.911
0.916
0.916
0.921
0.918
0.917
0.921
0.923
0.928
0.930
0.926
(ang)
-176.3
-176.9
-177.5
-177.9
-178.3
-178.5
-178.6
-178.8
-178.9
-179.2
-179.4
-179.5
-179.3
-179.6
-179.7
180.0
179.9
179.8
179.7
179.6
179.2
179.1
179.0
179.1
178.8
178.5
178.1
177.9
178.0
178.1
177.9
177.4
177.0
176.8
176.9
177.3
177.0
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct.2011
8
< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported
under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct.2011
9